US4963500A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of monitoring semiconductor manufacturing processes and test sample therefor
Assignee: SERA SOLAR Corp SANTA CLARA CA A CORP OF
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Filing: 1988-02-02
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Granted: 1990-10-16
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Expires: 2008-02-02
Abstract
Abstract Method of determining contaminants in a semiconductor processing apparatus in which a high purity, high carrier lifetime semiconductor test wafer is processed and the degradation of its carrier lifetime is determined.
Inventors
- 👤 George W. Cogan
- 👤 Gary E. Miner
- 👤 Lee A. Christel
- 👤 James F. Gibbons
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 09:36
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/06; H10P72/0604; G; G01; G01R; G01R31/00; G01R31/28; G01R31/282; G01R31/2831; H10P74/00; H10P74/23; H10P74/27; H10P74/277; Y; Y10; Y10S; Y10S136/00; Y10S136/29; Y10S148/00; Y10S148/162
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
77 words
The method determining contaminants in semiconductor processes which comprise forming in a wafer of high purity/high carrier lifetime semiconductor material of predetermined thickness at least one region of a thickness which is less than the said predetermined thickness to provide a test wafer, subjecting the high purity/high carrier lifetime test wafer to the semiconductor process and thereafter determining degradation of the lifetime of carriers in said region of said test wafer as a result of said process.
Claim 2
Independent Claim
77 words
The method determining contaminants in semiconductor processes which comprise forming in a wafer of high purity/high carrier lifetime semiconductor material of predetermined thickness at least one region of a thickness which is less than the said predetermined thickness to provide a test wafer, subjecting the high purity/high carrier lifetime test wafer to the semiconductor process and thereafter determining degradation of the lifetime of carriers in said region of said test wafer as a result of said process.
Claim 3
Independent Claim
90 words
The method of determining contaminants in semiconductor processing which comprise the steps of forming in a wafer of high purity/high carrier lifetime semiconductor material of predetermined thickness a plurality of regions of different thicknesses, each of said plurality of regions having a thickness less than the predetermined thickness, measuring the carrier lifetime in each of said regions of different thicknesses, subjecting the wafer to the processing and thereafter again measuring the lifetime in each of said regions and determining the extent of degradation of the surface and bulk carrier lifetime.
Claim 4
Independent Claim
90 words
The method of determining contaminants in semiconductor processing which comprise the steps of forming in a wafer of high purity/high carrier lifetime semiconductor material of predetermined thickness a plurality of regions of different thicknesses, each of said plurality of regions having a thickness less than the predetermined thickness, measuring the carrier lifetime in each of said regions of different thicknesses, subjecting the wafer to the processing and thereafter again measuring the lifetime in each of said regions and determining the extent of degradation of the surface and bulk carrier lifetime.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-10-15 | 1994-04-16 | 1994-10-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-15 | 1998-04-16 | 1998-10-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-15 | 2002-04-16 | 2002-10-16 | $7700.00 | Window Closed / Lapsed |