US4969152A
Expired / Lapsed
US
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Photo-lasertransistor
Assignee: Siemens AG
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Filing: 1988-09-28
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Granted: 1990-11-06
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Expires: 2008-09-28
Abstract
Abstract The invention relates to a photo-laser transistor with a base-collector pn-junction biased in the non-conducting direction and a base-emitter pn-junction biased in the conducting direction. With the invention, the functions of optical to electronic conversion, amplification, electrical to optical conversion, and, in particular, that of an optical repeater are to be realized in one single semiconductor element. For this purpose, the invention provides that the base-emitter pn-junction is formed as laser diode, that the laser diode is driven with a base precurrent to approximately its threshold value, and the residual current, which needs to be made available for stepping over the threshold, stems from the amplified photocurrent of the base-emitter pn-junction. The photo-laser transistor according to the invention is applied, in particular, as optical repeater, optical amplifier, optical bus connection building block, optical sensor, wavelength converter, opto-electrical logic respectively opto-electrical switch.
Inventors
- 👤 Hartmut Burghardt
- 👤 Klaus-Dieter Muehlbauer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 22:09
CPC Classifications
H; H04; H04B; H04B10/00; H04B10/40; H04B10/43; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0421; H01S5/0422; H04B10/29; H04B10/291; H04B10/2912; H04B10/2914; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/24; H10F30/245; H10F55/00; H10F55/10; H10F55/15; H10F55/155; H10F55/18; H01S5/06; H01S5/062; H01S5/06203
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
152 words
A photo-laser transistor with a base-collector pn-junction biased in the non-conducting direction and a base-emitter pn-junction biased in the conducting direction, characterized in that: the base-emitter pn-junction is formed as laser diode; the laser diode is driven with a base bias current to approximately its threshold value; additional current needed for exceeding the threshold is provided by amplified photocurrent of the base-collector pn-junction; the photo-laser transistor comprises an n + -InP basic substrate; n - -InP applied epitaxially as a collector forms a space-charge region and acceleration path for an amplification; p-InGaAsP applied epitaxially thereon as a base forms a boundary layer of a laser-active base region consisting essentially of p + -InP; n + -InGaAsP applied epitaxially thereon as an emitter forms the other boundary layer for charge carriers associated with the base; and emitter and base dopings are adjusted such that the inversion condition for the laser diode is fulfilled.
Claim 2
Dependent Claim
152 words
A photo-laser transistor with a base-collector pn-junction biased in the non-conducting direction and a base-emitter pn-junction biased in the conducting direction, characterized in that: the base-emitter pn-junction is formed as laser diode; the laser diode is driven with a base bias current to approximately its threshold value; additional current needed for exceeding the threshold is provided by amplified photocurrent of the base-collector pn-junction; the photo-laser transistor comprises an n + -InP basic substrate; n - -InP applied epitaxially as a collector forms a space-charge region and acceleration path for an amplification; p-InGaAsP applied epitaxially thereon as a base forms a boundary layer of a laser-active base region consisting essentially of p + -InP; n + -InGaAsP applied epitaxially thereon as an emitter forms the other boundary layer for charge carriers associated with the base; and emitter and base dopings are adjusted such that the inversion condition for the laser diode is fulfilled.
Claim 3
Dependent Claim
181 words
A photo-laser transistor with a base-collector pn-junction biased in the non-conducting direction and a base-emitter pn-junction biased in the conducting direction, characterized in that: the base-emitter pn-junction is formed as a laser diode; the laser diode is driven with a base bias current to approximately its threshold value; additional current needed for exceeding the threshold is provided by amplified photocurrent of the base-collector pn-junction; the photo-laser transistor comprises an n + -Si basic substrate; an n - -Si layer applied epitaxially thereon as a collector forms a space-charge region and acceleration path for an amplification effect; a p-Ge base layer is provided for grid adjustment to a p-GaAlAs layer, which layer as a base forms one confining layer of a laser-active base region consisting essentially of p + -GaAs; an n + -GaAlAs layer as an emitter applied epitaxially thereon forms the other confining layer of the laser-active region as well as the confining layer for the charge carriers associated with the base; and emitter and base dopings are adjusted such that the inversion condition for the laser diode is fulfilled.
Claim 4
Dependent Claim
181 words
A photo-laser transistor with a base-collector pn-junction biased in the non-conducting direction and a base-emitter pn-junction biased in the conducting direction, characterized in that: the base-emitter pn-junction is formed as a laser diode; the laser diode is driven with a base bias current to approximately its threshold value; additional current needed for exceeding the threshold is provided by amplified photocurrent of the base-collector pn-junction; the photo-laser transistor comprises an n + -Si basic substrate; an n - -Si layer applied epitaxially thereon as a collector forms a space-charge region and acceleration path for an amplification effect; a p-Ge base layer is provided for grid adjustment to a p-GaAlAs layer, which layer as a base forms one confining layer of a laser-active base region consisting essentially of p + -GaAs; an n + -GaAlAs layer as an emitter applied epitaxially thereon forms the other confining layer of the laser-active region as well as the confining layer for the charge carriers associated with the base; and emitter and base dopings are adjusted such that the inversion condition for the laser diode is fulfilled.
Claim 5
Dependent Claim
62 words
A photo-laser transistor as recited in one of claims 1 and 2, characterized in that for decreasing the losses of incident light respectively the light, which is to be coupled with a lightwave guide in the n + basic substrate, an etched back side recess is provided, which--as a function of the material--extends up into the region of the light-receiving base-collector pn-junction.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-11-05 | 1994-05-07 | 1994-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-11-05 | 1998-05-07 | 1998-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-11-05 | 2002-05-07 | 2002-11-06 | $7700.00 | Window Closed / Lapsed |