US4969415A
Expired / Lapsed
US
⏱️ 0.0 years remaining
PECVD (plasma enhanced chemical vapor deposition) method for depositing of tungsten or layers containing tungsten by in situ formation of tungsten fluorides
Assignee: International Business Machines Corp
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Filing: 1989-12-28
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Granted: 1990-11-13
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Expires: 2009-12-28
Abstract
Abstract The apparatus comprises a plasma deposition chamber having a port through which a fluoro compound etch gas is introduced into the chamber and a port through which the chamber is evacuated, refractory metal cathode configuration within the chamber, an anode within the chamber, and energy impression means for ionizing the etch gas in the chamber, whereby the etch gas reacts with the refractory metal cathode configuration to convert the metal to gaseous refractory metal fluorides which decompose to form a deposited layer on a semiconductor substrate positioned on the anode.
Inventors
- 👤 Johann W. Bartha
- 👤 Thomas Bayer
- 👤 Johann Greschner
- 👤 Georg Kraus
- 👤 Gerhard Schmid
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:08
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/448; C23C16/4488; C23C16/06; C23C16/08; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; Y; Y10; Y10S; Y10S148/00; Y10S148/147
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
184 words
An apparatus for the deposition of refractory metal layers or layers containing refractory metal on a semiconductor substrate, comprising in combination: a plasma deposition chamber having a port through which a fluoro compound etch gas is introduced into said chamber and a port through which said chamber is evacuated; a refractory metal cathode configuration within said chamber; an anode within said chamber; and energy impression means for ionizing said etch gas in said chamber, whereby said etch gas reacts with said refractory metal cathode configuration to convert said metal to gaseous refractory metal fluorides which decompose to form a deposited layer on a semiconductor substrate positioned on said anode; and wherein said cathode configuration comprises a refractory metal sheet and a cathode and the gaseous refractory metal fluorides are generated by etching said sheet, and wherein said refractory metal sheet and said cathode are electrically connected to form a hollow cathode region, a higher concentration of refractory metal fluoride radicals being generated in the region between said refractory metal sheet and said cathode owing to a higher ionization level of discharge in said region.
Claim 2
Independent Claim
184 words
An apparatus for the deposition of refractory metal layers or layers containing refractory metal on a semiconductor substrate, comprising in combination: a plasma deposition chamber having a port through which a fluoro compound etch gas is introduced into said chamber and a port through which said chamber is evacuated; a refractory metal cathode configuration within said chamber; an anode within said chamber; and energy impression means for ionizing said etch gas in said chamber, whereby said etch gas reacts with said refractory metal cathode configuration to convert said metal to gaseous refractory metal fluorides which decompose to form a deposited layer on a semiconductor substrate positioned on said anode; and wherein said cathode configuration comprises a refractory metal sheet and a cathode and the gaseous refractory metal fluorides are generated by etching said sheet, and wherein said refractory metal sheet and said cathode are electrically connected to form a hollow cathode region, a higher concentration of refractory metal fluoride radicals being generated in the region between said refractory metal sheet and said cathode owing to a higher ionization level of discharge in said region.
Claim 3
Dependent Claim
28 words
The apparatus of claim 1, wherein said cathode and said refractory metal sheet are about the same size and are spaced from each other by about 1 cm.
Claim 4
Dependent Claim
23 words
The apparatus of claim 1, wherein said cathode includes a gas shower for the introduction of an etch gas into said cathode region.
Claim 5
Dependent Claim
14 words
The apparatus of claim 2, wherein said refractory metal sheet is a tungsten sheet.
Claim 6
Dependent Claim
15 words
The apparatus of claim 1, wherein said energy impressing means is a high frequency generator.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-11-12 | 1994-05-14 | 1994-11-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-11-12 | 1998-05-14 | 1998-11-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-11-12 | 2002-05-14 | 2002-11-13 | $7700.00 | Window Closed / Lapsed |