Gettering method for semiconductor wafers

Claim 2

A semiconductor wafer treatment method, the semiconductor wafer including two opposed surfaces, the method comprising the steps of: generating ultrasonic waves; and propagating the ultrasonic waves to a desired surface of said semiconductor wafer via water to form mechanical damage on said desired surface of said semiconductor wafer and at the same time clean both surfaces of said semiconductor wafer by submerging the semiconductor wafer into a treatment bath filled with water, generating ultrasonic waves from ultrasonic wave generating means disposed to face the desired surface of said semiconductor wafer in said treatment bath, and propagating the ultrasonic waves into the water, the output power of the ultrasonic waves being in the range of 50 w to 500 w and the frequency of the ultrasonic waves being in the range of 10 kHz to 100 kHz.

Claim 3

A semiconductor wafer surface treatment method according to claim 1, wherein said water is pure water.

Claim 4

A semiconductor wafer surface treatment method according to claim 1, wherein said desired surface of said semiconductor wafer is a back-side surface opposite to a main surface in which semiconductor elements are to be formed in subsequent steps.

Claim 5

A semiconductor wafer surface treatment method according to claim 1, wherein said ultrasonic wave generating means is disposed on the bottom portion of said treatment bath, and a main surface of each of said semiconductor wafers opposite to said desired surface in which said mechanical damage is formed is cleaned by ultrasonic waves reflected from the surface of the water.

Claim 6

A semiconductor wafer surface treatment method according to claim 1, wherein said ultrasonic wave generating means is disposed on a first side wall portion of said treatment bath, and a main surface of each of said semiconductor wafers opposite to said desired surface in which said mechanical damages are formed is cleaned by ultrasonic waves reflected from a second side wall portion of said treatment bath which is opposite to the first side wall portion.

Claim 7

A semiconductor wafer treatment method, the semiconductor wafer having two opposed surfaces, the method comprising the steps of: generating ultrasonic waves; and propagating the ultrasonic waves, having an output power of 50 w to 500 w and an ultrasonic wave frequency of 10 kHz to 100 kHz, to a desired surface of said semiconductor wafer via water to form mechanical damage on the desired surface of said semiconductor wafer and at the same time clean both surfaces of said semiconductor wafer by placing said semiconductor wafer with the desired surface thereof in contact with the water disposed in a treatment bath, propagating ultrasonic waves generated from ultrasonic wave generating means disposed on the bottom of said treatment bath into the water to form mechanical damage on the desired surface of said semiconductor wafer and spraying cleaning solution onto the other surface of said semiconductor wafer from a nozzle disposed above the other surface of said semiconductor wafer to clean said other surfaces of said semiconductor wafer.

Claim 8

A semiconductor wafer treatment method, the semiconductor wafer having two opposed surfaces, the method comprising the steps of: generating ultrasonic waves; and propagating the ultrasonic waves, having an output power of 50 w to 500 w and an ultrasonic wave frequency of 10 kHz to 100 kHz, to a desired surface of said semiconductor wafer via water to form mechanical damage on the desired surface of said semiconductor wafer and at the same time clean both surfaces of said semiconductor wafer by placing said semiconductor wafer with the desired surface thereof in contact with the water disposed in a treatment bath, propagating ultrasonic waves generated from ultrasonic wave generating means disposed on the bottom of said treatment bath into the water to form mechanical damage on the desired surface of said semiconductor wafer and spraying cleaning solution onto the other surface of said semiconductor wafer from a nozzle disposed above the other surface of said semiconductor wafer to clean said other surfaces of said semiconductor wafer.

Claim 9

A semiconductor wafer surface treatment method according to claim 6, wherein the treatment is effected under a condition such that said semiconductor wafer is rotated.

Claim 10

A semiconductor wafer surface treatment method according to claim 6, wherein said nozzle is moved to clean said other surface of said semiconductor wafer.

Claim 11

A semiconductor wafer surface treatment method according to claim 6, wherein said water is pure water.

Claim 12

A semiconductor wafer surface treatment method according to claim 6, wherein said desired surface of said semiconductor wafer is a back-side surface opposite to a main surface in which semiconductor elements are to be formed.

Claim 13

A semiconductor wafer treatment method, the semiconductor wafer including two opposed surfaces, the method comprising the steps of: submerging the semiconductor wafer into a treatment bath filled with water; and generating ultrasonic waves, having output power in the range of 50 w to 500 w and a wave frequency of 10 kHz to 100 kHz, from ultrasonic wave generating means disposed to face the desired surface of said semiconductor wafer in said treatment bath, said ultrasonic waves propagating through the water to the desired surface of said semiconductor wafer to form mechanical damage on the desired surface and to simultaneously clean said desired surface.

Claim 14

A semiconductor wafer treatment method, the semiconductor wafer including two opposed surfaces, the method comprising the steps of: submerging the semiconductor wafer into a treatment bath filled with water; and generating ultrasonic waves, having output power in the range of 50 w to 500 w and a wave frequency of 10 kHz to 100 kHz, from ultrasonic wave generating means disposed to face the desired surface of said semiconductor wafer in said treatment bath, said ultrasonic waves propagating through the water to the desired surface of said semiconductor wafer to form mechanical damage on the desired surface and to simultaneously clean said desired surface.

Claim 15

A semiconductor wafer surface treatment method according to claim 11, wherein said water is pure water.

Claim 16

A semiconductor wafer surface treatment method according to claim 11, wherein said desired surface of said semiconductor wafer is a back-side surface opposite to a main surface in which semiconductor elements are to be formed in later steps.

Claim 17

A semiconductor wafer surface treatment method according to claim 11, wherein said ultrasonic wave generating means is disposed on the bottom portion of said treatment bath, and a main surface of each of said semiconductor wafers opposite to said desired surface in which said mechanical damages are formed is cleaned by ultrasonic wave reflected from the surface of the water.

Claim 18

A semiconductor wafer surface treatment method according to claim 11, wherein said ultrasonic wave generating means is disposed on a first side wall portion of said treatment bath, and a main surface of each of said semiconductor wafers opposite to said desired surface in which said mechanical damages are formed is cleaned by ultrasonic waves reflected from a second side wall portion of said treatment bath which is opposite to the first side wall portion.

Claim 19

A semiconductor wafer treatment method, the semiconductor wafer including two opposed surfaces, the method comprising the steps of: submerging at least a portion of a semiconductor wafer into a treatment bath filled with treatment solution; generating ultrasonic waves; and propagating the ultrasonic waves in the treatment solution to cause mechanical damage to at least one surface of the wafer sufficient for gettering and to simultaneously clean said at least one surface.

Claim 20

A semiconductor wafer treatment method, the semiconductor wafer including two opposed surfaces, the method comprising the steps of: submerging at least a portion of a semiconductor wafer into a treatment bath filled with treatment solution; generating ultrasonic waves; and propagating the ultrasonic waves in the treatment solution to cause mechanical damage to at least one surface of the wafer sufficient for gettering and to simultaneously clean said at least one surface.