US4980736A — Electric conversion device

Claim 1

Independent Claim 141 words

A photoelectric conversion device comprising: a substrate; a first electrode formed on said substrate; a photoconductive layer for converting incident light into carriers, being formed on said first electrode, and having an amorphous semiconductor layer which is made of at least one first element belonging to tetrahedral system and which contains at least one second element selected from the group consisting of hydrogen and halogens; means for applying an electric field to said photoconductive layer through the first electrode, so as to make said carriers run through said photoconductive layer and to multiply said carriers in said amorphous semiconductor layer under the electric filed; and a blocking structure for blocking charge injection from the first electrode into the photoconductive layer under said electric field applied by said means for applying the electric field, so as to obtain said carrier as signals.

Claim 2

Dependent Claim 141 words

A photoelectric conversion device comprising: a substrate; a first electrode formed on said substrate; a photoconductive layer for converting incident light into carriers, being formed on said first electrode, and having an amorphous semiconductor layer which is made of at least one first element belonging to tetrahedral system and which contains at least one second element selected from the group consisting of hydrogen and halogens; means for applying an electric field to said photoconductive layer through the first electrode, so as to make said carriers run through said photoconductive layer and to multiply said carriers in said amorphous semiconductor layer under the electric filed; and a blocking structure for blocking charge injection from the first electrode into the photoconductive layer under said electric field applied by said means for applying the electric field, so as to obtain said carrier as signals.

Claim 3

Dependent Claim 63 words

A photoelectric conversion device as claimed in claim 1, wherein the substrate is transparent, the first electrode is transparent and has a thickness not greater than 300 nm; the blocking structure includes a blocking layer between the first electrode and photoconductive layer and having a thickness of 5 to 500 nm; and the photoconductive layer has a thickness of 0.5 to 10 μm.

Claim 4

Dependent Claim 45 words

A photoelectric conversion device as claimed in claim 2, wherein the device further includes a further blocking layer on the photoconductive layer, on a side thereof not adjacent the blocking layer, and wherein the further blocking layer has a thickness of 5 to 500 nm.

Claim 5

Dependent Claim 29 words

A photoelectric conversion device as claimed in claim 1, said device being a blocking device wherein charge injection from electrodes of the device, into the photoconductive layer, is blocked.

Claim 6

Dependent Claim 49 words

A photoelectric conversion device as claimed in claim 1, wherein the amorphous semiconductor layer has such a thickness, and the means for applying an electric field can apply an electric field in a direction, such that said carriers run through the amorphous semiconductor layer and multiply said carriers therein.

Claim 7

Dependent Claim 125 words

A photoelectric conversion device comprising: a photoconductive layer for converting incident light into carriers, having an amorphous semiconductor layer which is made of a first element belonging to tetrahedral system and which contains a second element selected from a group consisting of hydrogen and halogens; a first electrode; means for applying an electric field to the photoconductive layer through the first electrode so as to make the carriers run through the photoconductive layer and so that the carriers multiply in the amorphous semiconductor layer under the electric field; and a blocking structure for blocking charge injection from the first electrode into the photoconductive layer under said electric field applied by said means for applying the electric field, so as to obtain the carriers as signals.

Claim 8

Dependent Claim 125 words

A photoelectric conversion device comprising: a photoconductive layer for converting incident light into carriers, having an amorphous semiconductor layer which is made of a first element belonging to tetrahedral system and which contains a second element selected from a group consisting of hydrogen and halogens; a first electrode; means for applying an electric field to the photoconductive layer through the first electrode so as to make the carriers run through the photoconductive layer and so that the carriers multiply in the amorphous semiconductor layer under the electric field; and a blocking structure for blocking charge injection from the first electrode into the photoconductive layer under said electric field applied by said means for applying the electric field, so as to obtain the carriers as signals.

Claim 9

Dependent Claim 18 words

A photoelectric conversion device as claimed in claim 6, wherein said amorphous semiconductor layer is made of silicon.

Claim 10

Dependent Claim 19 words

A photoelectric conversion device as claimed in claim 6, wherein said amorphous semiconductor layer is made of silicon carbide.

Claim 11

Dependent Claim 25 words

A photoelectric conversion device as claimed in claim 8, wherein the composition ratio of carbon in said silicon carbide is 5 to 50 atomic %.

Claim 12

Dependent Claim 18 words

A photoelectric conversion device as claimed in claim 6, wherein said substrate and said first electrode are transparent.

Claim 13

Dependent Claim 29 words

A photoelectric conversion device as claimed in claim 6, wherein said tetrahedral system is made of a material selected from the group consisting of carbon, silicon, germanium and tin.

Claim 14

Dependent Claim 18 words

A photoelectric conversion device as claimed in claim 6, wherein said halogens are fluorine, chlorine, bromine and iodine.

Claim 15

Dependent Claim 27 words

A photoelectric conversion device as claimed in claim 6, wherein said blocking structure includes a first blocking layer, formed between said first electrode and said photoconductive layer.

Claim 16

Dependent Claim 30 words

A photoelectric conversion device as claimed in claim 13, wherein a second blocking layer is formed on said photoconductive layer, on the side thereof furthest from the first blocking layer.

Claim 17

Dependent Claim 20 words

A photoelectric conversion device as claimed in claim 14, wherein a second electrode is formed on said second blocking layer.

Claim 18

Dependent Claim 23 words

A photoelectric conversion device as claimed in claim 14, wherein each of the first and second blocking layers include a plurality of sub-layers.

Claim 19

Dependent Claim 66 words

A photoelectric conversion device as claimed in claim 16, wherein the plurality of sub-layers of the first blocking layer are alternately undoped a-SiC:H having a wide band gap and p-conductivity type a-SiC:H having a narrow band gap; and wherein the plurality of sub-layers of the second blocking layer are alternately undoped a-SiC:H having a wide band gap and n-conductivity type a-SiC:H having a narrow band gap.

Claim 20

Dependent Claim 55 words

A photoelectric conversion device as claimed in claim 6, wherein the photoelectric conversion device is adapted to have incident light irradiated on one side thereof, wherein said means for applying an electric field applies it to said photoconductive layer so that the side to which the incident light is projected is at a negative potential.

Claim 21

Dependent Claim 140 words

A photoelectric conversion device comprising: a substrate; a first electrode formed on said substrate; a photoconductive layer for converting incident light into carriers, being formed on said first electrode, and having an amorphous semiconductor layer which is made of silicon carbide and which contains at least one second element selected from the group consisting of hydrogen and halogens, the photoconductive layer including a pn-junction therein; means for applying an electric field to said photoconductive layer through the first electrode, so as to make said carriers run through said photoconductive layer and to multiply said carriers in said semiconductor layer under said electric field; and a blocking structure for blocking charge injection from the first electrode into the photoconductive layer under said electric field applied by said means for applying the electric field, so as to obtain said carrier as signals.

Claim 22

Dependent Claim 140 words

A photoelectric conversion device comprising: a substrate; a first electrode formed on said substrate; a photoconductive layer for converting incident light into carriers, being formed on said first electrode, and having an amorphous semiconductor layer which is made of silicon carbide and which contains at least one second element selected from the group consisting of hydrogen and halogens, the photoconductive layer including a pn-junction therein; means for applying an electric field to said photoconductive layer through the first electrode, so as to make said carriers run through said photoconductive layer and to multiply said carriers in said semiconductor layer under said electric field; and a blocking structure for blocking charge injection from the first electrode into the photoconductive layer under said electric field applied by said means for applying the electric field, so as to obtain said carrier as signals.

Claim 23

Dependent Claim 22 words

A photoelectric conversion device as claimed in claim 6, wherein the amorphous semiconductor layer has a thickness of 0.5 to 10 μm.

Claim 24

Dependent Claim 25 words

A photoelectric conversion device as claimed in claim 6, wherein the device includes a second electrode which, with the first electrode, sandwiches the photoconductive layer.

Claim 25

Dependent Claim 23 words

A photoelectric conversion device as claimed in claim 6, wherein the amorphous semiconductor layer has a forbidden band width greater than 1.85 eV.

Claim 26

Dependent Claim 22 words

A photoelectric conversion device as claimed in claim 22, wherein the amorphous semiconductor layer has a thickness of 0.5 to 10 μm.

Claim 27

Dependent Claim 20 words

A photoelectric conversion device as claimed in claim 6, wherein the content of the second element is 0.5-30 atomic %.

Claim 28

Dependent Claim 28 words

A photoelectric conversion device as claimed in claim 6, wherein the amorphous semiconductor layer also contains elements of Group III or of Group V of the Periodic Table.

Claim 29

Dependent Claim 51 words

A photoelectric conversion device as claimed in claim 6, wherein the blocking structure includes one of the first and second blocking layers, with one of the first and second blocking layers being a hole blocking layer, and the other of the first and second blocking layers being an electron blocking layer.

Claim 30

Dependent Claim 71 words

A photoelectric conversion device as claimed in claim 26, wherein the blocking structure includes the hole blocking layer, and wherein the hole blocking layer is at least one sub-layer of amorphous silicon carbide or silicon nitride containing at least one selected from the group consisting of hydrogen and halogens, and also containing or not containing a Group V element of the Periodic Table so as to provide an n-conductivity type sub-layer.

Claim 31

Dependent Claim 50 words

A photoelectric conversion device as claimed in claim 26, wherein the blocking structure includes the hole blocking layer, and wherein the hole blocking layer is at least one sub-layer of a material of an oxide of at least one of Ce, Ge, Zn, Cd, Al, Nb, Ta, Cr and W.

Claim 32

Dependent Claim 71 words

A photoelectric conversion device as claimed in claim 26, wherein the blocking structure includes the electron blocking layer, and wherein the electron blocking layer is at least one sub-layer of amorphous silicon carbide or silicon nitride containing at least one selected from the group consisting of hydrogen and halogens, and also containing or not containing a Group III element of the Periodic Table so as to provide a p-conductivity type sub-layer.

Claim 33

Dependent Claim 44 words

A photoelectric conversion device as claimed in claim 26, wherein the blocking structure includes the electron blocking layer, and wherein the electron blocking layer is at least one sub-layer of a material selected from the group consisting of an oxide of Ir, and chalcogenides.

Claim 34

Dependent Claim 33 words

A photoelectric conversion device as claimed in claim 6, wherein the amorphous semiconductor layer has a portion which has a smaller band gap than that of another portion of the amorphous semiconductor layer.

Claim 35

Dependent Claim 102 words

A photoelectric conversion device comprising: a photoconductive layer for converting incident light into carriers, having an amorphous semiconductor layer which is made of a first element belonging to tetrahedral system and which contains a second element selected from a group consisting of hydrogen and halogens, wherein said photoconductive layer is made of a plurality of semiconductor layers; a first electrode; means for applying an electric field to the photoconductive layer through the first electrode so that the amorphous semiconductor layer multiplies the carriers under the electric field; and a blocking structure for blocking carriers from the first electrode into the photoconductive layer.

Claim 36

Dependent Claim 102 words

A photoelectric conversion device comprising: a photoconductive layer for converting incident light into carriers, having an amorphous semiconductor layer which is made of a first element belonging to tetrahedral system and which contains a second element selected from a group consisting of hydrogen and halogens, wherein said photoconductive layer is made of a plurality of semiconductor layers; a first electrode; means for applying an electric field to the photoconductive layer through the first electrode so that the amorphous semiconductor layer multiplies the carriers under the electric field; and a blocking structure for blocking carriers from the first electrode into the photoconductive layer.

Claim 37

Dependent Claim 103 words

A photoelectric conversion device comprising: a photoconductive layer for converting incident light into carriers, having an amorphous semiconductor layer which is made of a first element belonging to tetrahedral system and which contains a second element selected from a group consisting of hydrogen and halogens, wherein the amorphous semiconductor layer has portions where the band gap varies discontinuously; a first electrode; means for applying an electric field to the photoconductive layer through the first electrode so that the amorphous semiconductor layer multiplies the carriers under the electric field; and a blocking structure for blocking carriers from the first electrode into the photoconductive layer.

Claim 38

Dependent Claim 103 words

A photoelectric conversion device comprising: a photoconductive layer for converting incident light into carriers, having an amorphous semiconductor layer which is made of a first element belonging to tetrahedral system and which contains a second element selected from a group consisting of hydrogen and halogens, wherein the amorphous semiconductor layer has portions where the band gap varies discontinuously; a first electrode; means for applying an electric field to the photoconductive layer through the first electrode so that the amorphous semiconductor layer multiplies the carriers under the electric field; and a blocking structure for blocking carriers from the first electrode into the photoconductive layer.

Claim 39

Dependent Claim 148 words

A photoelectric conversion device comprising: a photoconductive layer for converting incident light into carriers, having a plurality of amorphous semiconductor layers which are made of a first element belonging to tetrahedral system and which contains a second element selected from a group consisting of hydrogen and halogens, wherein the plurality of amorphous semiconductor layers each are made of a compound of silicon and carbon and contain an element selected from a group consisting of hydrogen and halogens, and each amorphous semiconductor layer has a region in which the carbon concentration is changed so that a band gap of the amorphous semiconductor layer varies; a first electrode; means for applying an electric field to the photoconductive layer through the first electrode so that the amorphous semiconductor layer multiplies the carriers under the electric field; and a blocking structure for blocking carriers from the first electrode into the photoconductive layer.

Claim 40

Dependent Claim 148 words

A photoelectric conversion device comprising: a photoconductive layer for converting incident light into carriers, having a plurality of amorphous semiconductor layers which are made of a first element belonging to tetrahedral system and which contains a second element selected from a group consisting of hydrogen and halogens, wherein the plurality of amorphous semiconductor layers each are made of a compound of silicon and carbon and contain an element selected from a group consisting of hydrogen and halogens, and each amorphous semiconductor layer has a region in which the carbon concentration is changed so that a band gap of the amorphous semiconductor layer varies; a first electrode; means for applying an electric field to the photoconductive layer through the first electrode so that the amorphous semiconductor layer multiplies the carriers under the electric field; and a blocking structure for blocking carriers from the first electrode into the photoconductive layer.

Claim 41

Dependent Claim 29 words

A photoelectric conversion device as claimed in claim 19, said device being a blocking device wherein charge injection from electrodes of the device, into the photoconductive layer, is blocked.

Claim 42

Dependent Claim 29 words

A photoelectric conversion device as claimed in claim 6, said device being a blocking device wherein charge injection from electrodes of the device, into the photoconductive layer, is blocked.

Claim 43

Dependent Claim 49 words

A photoelectric conversion device as claimed in claim 19, wherein the amorphous semiconductor layer has such a thickness, and the means for applying an electric field can apply an electric field in a direction, such that said carriers run through the amorphous semiconductor layer and multiply said carriers therein.

Claim 44

Dependent Claim 48 words

A photoelectric conversion device as claimed in claim 6, wherein the amorphous semiconductor layer has such thickness, and the means for applying an electric field can apply an electric field in a direction, such that said carriers run through the amorphous semiconductor layer and multiply said carriers therein.

Claim 45

Dependent Claim 123 words

A photoelectric conversion device comprising: a photoconductive layer for converting incident light into carriers, having an amorphous semiconductor layer which is made of a first element belonging to tetrahedral system and which contains a second element selected from a group consisting of hydrogen and halogens, wherein said photoconductive layer is made of a plurality of semiconductor layers, and wherein said photoconductive layer has a crystal semiconductor layer, said amorphous semiconductor layer being formed on the crystal semiconductor layer; a first electrode; means for applying an electric field to the photoconductive layer through the first electrode so that the amorphous semiconductor layer multiples the carriers under the electric field; and a blocking structure for blocking carriers from the first electrode into the photoconductive layer.

Claim 46

Dependent Claim 123 words

A photoelectric conversion device comprising: a photoconductive layer for converting incident light into carriers, having an amorphous semiconductor layer which is made of a first element belonging to tetrahedral system and which contains a second element selected from a group consisting of hydrogen and halogens, wherein said photoconductive layer is made of a plurality of semiconductor layers, and wherein said photoconductive layer has a crystal semiconductor layer, said amorphous semiconductor layer being formed on the crystal semiconductor layer; a first electrode; means for applying an electric field to the photoconductive layer through the first electrode so that the amorphous semiconductor layer multiples the carriers under the electric field; and a blocking structure for blocking carriers from the first electrode into the photoconductive layer.

Claim 47

Dependent Claim 18 words

A photoelectric conversion device as claimed in claim 39, wherein said crystal semiconductor layer is made of silicon.

Claim 48

Dependent Claim 132 words

A photoelectric conversion device comprising: a photoconductive layer, for converting incident light into carriers, having an amorphous semiconductor layer which is made of a compound of silicon and carbon and which contains an element selected from a group consisting of hydrogen and halogens, and wherein the photoconductive layer includes a pn-junction therein; a first electrode; means for applying an electric field to the photoconductive layer through the first electrode so as to make the carriers run through the photoconductive layer and so that the carriers are multiplied in the photoconductive layer under the electric field; and a blocking structure for blocking charge injection from the first electrode into the photoconductive layer under said electric field applied by the means for applying the electric field, so as to obtain said carrier as signals.

Claim 49

Dependent Claim 132 words

A photoelectric conversion device comprising: a photoconductive layer, for converting incident light into carriers, having an amorphous semiconductor layer which is made of a compound of silicon and carbon and which contains an element selected from a group consisting of hydrogen and halogens, and wherein the photoconductive layer includes a pn-junction therein; a first electrode; means for applying an electric field to the photoconductive layer through the first electrode so as to make the carriers run through the photoconductive layer and so that the carriers are multiplied in the photoconductive layer under the electric field; and a blocking structure for blocking charge injection from the first electrode into the photoconductive layer under said electric field applied by the means for applying the electric field, so as to obtain said carrier as signals.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1993-12-24	1994-06-25	1994-12-25	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1997-12-24	1998-06-25	1998-12-25	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2001-12-24	2002-06-25	2002-12-25	$7700.00	Window Closed / Lapsed

Electric conversion device

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