US4982243A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Schottky contact
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1989-03-28
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Granted: 1991-01-01
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Expires: 2009-03-28
Abstract
Abstract A schottky contact which comprises a single crystal diamond substrate, an epitaxial diamond layer formed on said substrate and a schottky electrode layer formed on said epitaxial diamond layer, wherein said substrate has at least one polished surface which inclines at an angle of not larger than 10° to a (100) plane and said epitaxial diamond layer is formed on said surface, provides a device which has good thermal resistance and environmental resistance and which device can be easily highly integrated.
Inventors
- 👤 Hideaki Nakahata
- 👤 Takahiro Imai
- 👤 Hiromu Shiomi
- 👤 Naoji Fujimori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:53
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10D; H10D62/00; H10D62/40; H10D62/405; H10D64/00; H10D64/60; H10D64/64; H10D8/00; H10D8/60; H10H20/052; H10H20/81; H10H20/822; H10H20/826
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
60 words
A schottky contact comprising: a single crystal diamond substrate; an epitaxial diamond layer formed on said substrate; and a schottky electrode layer formed on said epitaxial diamond layer; wherein said substrate has at least one polished surface which inclines at an angle of less than 5° to a (100) plane and said epitaxial diamond layer is formed on said surface.
Claim 2
Dependent Claim
60 words
A schottky contact comprising: a single crystal diamond substrate; an epitaxial diamond layer formed on said substrate; and a schottky electrode layer formed on said epitaxial diamond layer; wherein said substrate has at least one polished surface which inclines at an angle of less than 5° to a (100) plane and said epitaxial diamond layer is formed on said surface.
Claim 3
Dependent Claim
22 words
The schottky contact according to claim 1, wherein the surface inclines at the angle of 0.1° to 5° to the (100) plane.
Claim 4
Dependent Claim
20 words
The schottky contact according to claim 1, wherein the epitaxial diamond layer has a thickness of 0.05 to 20 μm.
Claim 5
Dependent Claim
16 words
The schottky contact according to claim 1, wherein the epitaxial diamond layer is a p-type semiconductor.
Claim 6
Dependent Claim
12 words
A semiconductor device which has the schottky contact according to claim 1.
Claim 7
Dependent Claim
48 words
A schottky contact according to claim 1, wherein the schottky electrode layer is made of at least one material selected from the group consisting of tungsten, molybdenum, niobium, tantalum, aluminum, polycrystalline silicon, nickel, gold, platinum, tungsten carbide, molybdenum carbide, tantalum carbide, niobium carbide, tungsten silicide and molybdenum silicide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-31 | 1994-07-02 | 1995-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-31 | 1998-07-02 | 1999-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-31 | 2002-07-02 | 2003-01-01 | $7700.00 | Window Closed / Lapsed |