US4988533A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for deposition of silicon oxide on a wafer
Assignee: Texas Instruments Inc
•
Filing: 1988-05-27
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Granted: 1991-01-29
•
Expires: 2008-05-27
Abstract
Abstract A processing apparatus and method for depositing a silicon oxide layer on a temperature sensitive wafer utilizing a single process chamber provide nitrous oxide gas to the chamber with the excitation energy being provided by a remotely generated plasma while supplying silane gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce the silicon oxide layer.
Inventors
- 👤 Dean W. Freeman
- 👤 Joseph D. Luttmer
- 👤 Patricia B. Smith
- 👤 Cecil J. Davis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:36
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
106 words
A method for deposition of silicon oxide on a wafer comprising: (a) disposing said wafer in a process chamber within a process module at low pressure; (b) generating a remote plasma from nitrous oxide gas; (c) introducing said remote plasma into said chamber and to a face of the wafer; (d) introducing a silane gas mixture into said chamber and to the face of the wafer; (e) illuminating said silane and the remote plasma within said chamber with additional ultraviolet light produced within said module; and (f) maintain the temperature within said chamber with the range of about 100 degrees to less than 100 degrees C.
Claim 2
Independent Claim
106 words
A method for deposition of silicon oxide on a wafer comprising: (a) disposing said wafer in a process chamber within a process module at low pressure; (b) generating a remote plasma from nitrous oxide gas; (c) introducing said remote plasma into said chamber and to a face of the wafer; (d) introducing a silane gas mixture into said chamber and to the face of the wafer; (e) illuminating said silane and the remote plasma within said chamber with additional ultraviolet light produced within said module; and (f) maintain the temperature within said chamber with the range of about 100 degrees to less than 100 degrees C.
Claim 3
Dependent Claim
19 words
The process as set forth in claim 1 including the step of purging said chamber with an appropriate gas.
Claim 4
Dependent Claim
30 words
The process as set forth in claim 1 including the steps of removing said wafer from said chamber and cleaning said chamber after said wafer is removed from said chamber.
Claim 5
Independent Claim
70 words
A method for deposition of silicon oxide on a wafer in a process chamber, comprising the steps of: (a) generating free radicals from nitrous oxide gas in a plasma generating chamber remote from the process chamber; (b) introducing the free radicals and silane into the process chamber and to a face of the wafer; and (c) illuminating the silane and the free radicals with ultraviolet light produced within said chamber.
Claim 6
Independent Claim
70 words
A method for deposition of silicon oxide on a wafer in a process chamber, comprising the steps of: (a) generating free radicals from nitrous oxide gas in a plasma generating chamber remote from the process chamber; (b) introducing the free radicals and silane into the process chamber and to a face of the wafer; and (c) illuminating the silane and the free radicals with ultraviolet light produced within said chamber.
Claim 7
Dependent Claim
19 words
The process as set forth in claim 4 including the step of purging said chamber with an appropriate gas.
Claim 8
Dependent Claim
23 words
The process as set forth in claim 4 including the step of purging the temperature of the chamber at 100° C. or below.
Claim 9
Dependent Claim
30 words
The process as set forth in claim 4 including the steps of removing said wafer from said chamber and cleaning said chamber after said wafer is removed from said chamber.
Claim 10
Independent Claim
101 words
A method for deposition of silicon dioxide on a wafer in a process chamber, comprising the steps of: (a) disposing the wafer in the process chamber; (b) generating free radicals from nitrous oxide gas in a plasma generator remote form the process chamber; (c) introducing the free radicals into said chamber and to a face of the wafer; (d) introducing a silane gas into said chamber and to the face of the wafer; (e) illuminating the silane and the free radicals with ultraviolet light produced within said module; and (f) maintaining the temperature within said chamber at 100° C. or below.
Claim 11
Independent Claim
101 words
A method for deposition of silicon dioxide on a wafer in a process chamber, comprising the steps of: (a) disposing the wafer in the process chamber; (b) generating free radicals from nitrous oxide gas in a plasma generator remote form the process chamber; (c) introducing the free radicals into said chamber and to a face of the wafer; (d) introducing a silane gas into said chamber and to the face of the wafer; (e) illuminating the silane and the free radicals with ultraviolet light produced within said module; and (f) maintaining the temperature within said chamber at 100° C. or below.
Claim 12
Dependent Claim
19 words
The process as set forth in claim 8 including the step of purging said chamber with an appropriate gas.
Claim 13
Dependent Claim
30 words
The process as set forth in claim 8 including the steps of removing said wafer from said chamber and cleaning said chamber after said wafer is removed from said chamber.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-28 | 1994-07-30 | 1995-01-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-28 | 1998-07-30 | 1999-01-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-28 | 2002-07-30 | 2003-01-29 | $7700.00 | Window Closed / Lapsed |