Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
226 words
A testable digital data storage circuit for use in an integrated circuit comprising: (a) first and second two-state latch elements, each of said latch elements, in use, producing an output in the form of a selected one of two voltage levels depending only on whether an input signal applied to the particular element is above or below a predetermined threshold voltage, (b) an input terminal for receiving an input signal to the circuit, a first output terminal connected to the output of the first latch element, (c) switch means responsive to asynchronous input signals to establish one of two voltage levels selectively, (d) first gating means connected to apply the voltage level established by the switch means to the input of the first latch element, (e) test input and test output terminals, (f) second and third gating means respectively connected from said test input terminal to the input of the first latch element and from the output of the first latch element to the input of the second latch element, the output of the second latch element being connected to said test output terminal, and (g) means to maintain, during normal operation, the first gating means open to pass the voltage level to the first latch element and to maintain, during testing, the first gating means closed and the second and third gating means alternately opened.
Claim 2
Dependent Claim
226 words
A testable digital data storage circuit for use in an integrated circuit comprising: (a) first and second two-state latch elements, each of said latch elements, in use, producing an output in the form of a selected one of two voltage levels depending only on whether an input signal applied to the particular element is above or below a predetermined threshold voltage, (b) an input terminal for receiving an input signal to the circuit, a first output terminal connected to the output of the first latch element, (c) switch means responsive to asynchronous input signals to establish one of two voltage levels selectively, (d) first gating means connected to apply the voltage level established by the switch means to the input of the first latch element, (e) test input and test output terminals, (f) second and third gating means respectively connected from said test input terminal to the input of the first latch element and from the output of the first latch element to the input of the second latch element, the output of the second latch element being connected to said test output terminal, and (g) means to maintain, during normal operation, the first gating means open to pass the voltage level to the first latch element and to maintain, during testing, the first gating means closed and the second and third gating means alternately opened.
Claim 3
Dependent Claim
56 words
A storage circuit according to claim 1 in which the switch means includes a first transistor rendered conducting by a SET signal and connected from a first supply conductor to the first gating means and a second transistor rendered conducting by a CLEAR signal and connecting from a second supply conductor to the first gating means.
Claim 4
Dependent Claim
70 words
A storage circuit according to claim 2 in which the switch means includes a further transistor which is rendered non-conducting by either the SET signal or the CLEAR signal and which is connected in series with either the second transistor or the first transistor, so that the first and second supply conductors are not connected together when both the SET signal and the CLEAR are present at the same time.
Claim 5
Dependent Claim
37 words
A storage circuit according to claim 1 in which at least one of the gating means comprises a MOS transistor, the controlled path of which is connected from the input to the output of the gating means.
Claim 6
Dependent Claim
37 words
A storage circuit according to claim 1 wherein each latch element includes first and second complementary transistor inverter circuits connected in a positive feedback loop, the second complementary transistor inverter circuit having a restricted output current capability.
Claim 7
Dependent Claim
14 words
A storage circuit according to claim 2 wherein all the transistors are MOS transistors.
Claim 8
Dependent Claim
14 words
A storage circuit according to claim 2 wherein all the transistors are bipolar transistors.
Claim 9
Dependent Claim
30 words
A storage circuit according to claim 2 wherein at least one of the transistors is a MOS transistor and at least one other of the transistors is a bipolar transistor.
Claim 10
Dependent Claim
37 words
A storage circuit according to claim 3 in which at least one of the gating means comprises a MOS transistor, the controlled path of which is connected from the input to the output of the gating means.
Claim 11
Dependent Claim
37 words
A storage circuit according to claim 9 wherein each latch element includes first and second complementary transistor inverter circuits connected in a positive feedback loop, the second complementary transistor inverter circuit having a restricted output current capability.
Claim 12
Dependent Claim
14 words
A storage circuit according to claim 10 wherein all the transistors are MOS transistors.
Claim 13
Dependent Claim
14 words
A storage circuit according to claim 10 wherein all the transistors are bipolar transistors.
Claim 14
Dependent Claim
28 words
A storage circuit according to claim 10 wherein at least one of the transistors is a MOS transistor and at least one other transistor is a bipolar transistor.