US4998979A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for washing deposition film-forming device
Assignee: Canon Inc
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Filing: 1989-06-06
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Granted: 1991-03-12
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Expires: 2009-06-06
Abstract
Abstract A method for washing a deposition film-forming device for forming deposition films comprises removing the reaction product attached on the interior of the reaction vessel during formation of the deposition film with ClF 3 gas.
Inventors
- 👤 Hiroaki Niino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 09:33
CPC Classifications
C; C03; C03C; C03C17/00; C03C17/001; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4405; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
82 words
A method for cleaning excess reaction product from a deposition film-forming device which utilizes microwave plasma chemical vapor deposition for forming a deposition film on a substrate positioned in a reaction vessel, which comprises: (a) introducing ClF 3 gas into said reaction vessel after removing said substrate upon which said deposition film is formed from said reaction vessel; and (b) applying microwave energy, thereby removing the reaction product attached on the interior of said reaction vessel during formation of the deposition film.
Claim 2
Independent Claim
82 words
A method for cleaning excess reaction product from a deposition film-forming device which utilizes microwave plasma chemical vapor deposition for forming a deposition film on a substrate positioned in a reaction vessel, which comprises: (a) introducing ClF 3 gas into said reaction vessel after removing said substrate upon which said deposition film is formed from said reaction vessel; and (b) applying microwave energy, thereby removing the reaction product attached on the interior of said reaction vessel during formation of the deposition film.
Claim 3
Dependent Claim
17 words
The method according to claim 1, in which said deposition film is a deposition film containing silicon.
Claim 4
Dependent Claim
18 words
The method according to claim 1, in which said deposition film is used in photoconductive member for electrophotography.
Claim 5
Dependent Claim
29 words
The method according to claim 1, in which the material of the reaction vessel is selected from aluminum alloy, nickel alloy, SS41 steel, SUS304, SUS316, SUS430 and quartz glass.
References Cited (Backward Citations)
WO1980001363A1
Cited
DD144401A1
Cited
US4310380A
Cited
US4498953A
Cited
US4581101A
Cited
US4787957A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-03-11 | 1994-09-10 | 1995-03-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-03-11 | 1998-09-10 | 1999-03-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-03-11 | 2002-09-10 | 2003-03-12 | $7700.00 | Window Closed / Lapsed |