US5005057A
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Semiconductor light-emitting diode and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 1990-04-13
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Granted: 1991-04-02
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Expires: 2010-04-13
Abstract
Abstract A blue LED which includes a light-emitting layer having a p-n junction makes use of the superlattice structure being formed of a plurality of BP layers and Ga x Al 1-x N (0≦x≦1) layers which are alternately stacked, with the Ga x Al 1-x N (0≦x≦1) layers having a zinc blende type structure, or else makes use of a Ga x Al y B 1-x-y N z P 1-z (0≦x, y, z≦1 and x+y≦1) mixed crystal layer having a zinc blende type crystal structure.
Inventors
- 👤 Toshihide Izumiya
- 👤 Yasuo Ohba
- 👤 Ako Hatano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 04:37
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; B; B82; B82Y; B82Y20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/811; H10H20/812; H10H20/814; H10W; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W74/00; H10W90/00; H10W90/701; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
97 words
A semiconductor light-emitting diode including a light-emitting layer with a p-n junction, said light-emitting layer comprising: a first superlattice layer, of a first conductivity type, wherein a plurality of BP and Ga x Al l-x N (0≦x≦1) layers are alternately stacked, said Ga x Al l-x N (0≦x≦1) layers having a zinc blend type crystal structure; and a second superlattice layer, of a second conductivity type, wherein a plurality of BP and Ga x Al l-x N (0≦x≦1) layers are alternately stacked, said Ga x Al l-x N (0≦x≦1) layers having a zinc blend type crystal structure.
Claim 2
Dependent Claim
97 words
A semiconductor light-emitting diode including a light-emitting layer with a p-n junction, said light-emitting layer comprising: a first superlattice layer, of a first conductivity type, wherein a plurality of BP and Ga x Al l-x N (0≦x≦1) layers are alternately stacked, said Ga x Al l-x N (0≦x≦1) layers having a zinc blend type crystal structure; and a second superlattice layer, of a second conductivity type, wherein a plurality of BP and Ga x Al l-x N (0≦x≦1) layers are alternately stacked, said Ga x Al l-x N (0≦x≦1) layers having a zinc blend type crystal structure.
Claim 3
Dependent Claim
89 words
A semiconductor light-emitting diode including a light-emitting layer having a p-n junction, said light-emitting layer comprising: a first mixed crystal layer, consisting of a Ga x Al y B l-x-y N z P l-z (0≦x, y, z≦1 and x+y≦1) layer of a first conductivity type having a zinc blend type crystal structure; and a second mixed crystal layer, consisting of a Ga x Al y B l-x-y N z P l-z (0≦x, y, z≦1 and x+y≦1) layer of a second conductivity type having a zinc blend type crystal structure.
Claim 4
Dependent Claim
89 words
A semiconductor light-emitting diode including a light-emitting layer having a p-n junction, said light-emitting layer comprising: a first mixed crystal layer, consisting of a Ga x Al y B l-x-y N z P l-z (0≦x, y, z≦1 and x+y≦1) layer of a first conductivity type having a zinc blend type crystal structure; and a second mixed crystal layer, consisting of a Ga x Al y B l-x-y N z P l-z (0≦x, y, z≦1 and x+y≦1) layer of a second conductivity type having a zinc blend type crystal structure.
Claim 5
Dependent Claim
136 words
A semiconductor light-emitting diode including a light-emitting layer having a p-n junction. comprising: a substrate; a light-reflection layer formed on said substrate and having a plurality of Ga x Al l-x N (0≦x≦1)/BP superlattice layers of two types having different average compositions; a first superlattice layer, formed on said light-reflection layer and being of a first conductivity type, wherein a plurality of BP and Ga x Al l-x N (0≦x≦1) layers are alternately stacked, said Ga x Al l-x N (0≦x≦1) layers having a zinc blend crystal structure; and a second superlattice layer, formed on said superlattice layer and being of a second conductivity type, wherein a plurality of BP and Ga x Al l-x N (0≦x≦1) layers are alternately stacked said Ga x al l-x N (0≦x≦1) layers having a zinc blend type crystal structure.
Claim 6
Dependent Claim
136 words
A semiconductor light-emitting diode including a light-emitting layer having a p-n junction. comprising: a substrate; a light-reflection layer formed on said substrate and having a plurality of Ga x Al l-x N (0≦x≦1)/BP superlattice layers of two types having different average compositions; a first superlattice layer, formed on said light-reflection layer and being of a first conductivity type, wherein a plurality of BP and Ga x Al l-x N (0≦x≦1) layers are alternately stacked, said Ga x Al l-x N (0≦x≦1) layers having a zinc blend crystal structure; and a second superlattice layer, formed on said superlattice layer and being of a second conductivity type, wherein a plurality of BP and Ga x Al l-x N (0≦x≦1) layers are alternately stacked said Ga x al l-x N (0≦x≦1) layers having a zinc blend type crystal structure.
Claim 7
Dependent Claim
13 words
A diode according to claim 3, wherein said substrate is GaP or SiC.
Claim 8
Dependent Claim
21 words
A diode according to claim 3, wherein said substrate is of tetragonal crystal structure or of sodium chloride type crystal structure.
Claim 9
Dependent Claim
27 words
A diode according to claim 5, wherein the substrate of tetragonal crystal structure is TiO 2 and the substrate of sodium chloride type crystal structure is MnO.
Claim 10
Dependent Claim
130 words
A semiconductor light-emitting diode including a light-emitting layer having a p-n junction, comprising: a substrate; a light-reflection layer, formed on said substrate and having a plurality of Ga x Al l-x N (0≦x≦1)/BP superlattice layers of two types having different average compositions; a first mixed crystal layer, formed on said light-reflection layer and consisting of a Ga x Al y B l-x-y N z P l-z (0≦x, y, z ≦1 and x+y≦1) layer of a first conductivity type having a zinc blend type crystal structure; and a second mixed crystal layer, formed on said first mixed crystal layer and consisting of a Ga x Al y B l-x-y N z P l-z (0≦x, y, z≦1 and x+y≦1) layer of a second conductivity type having a zinc blend type crystal structure.
Claim 11
Dependent Claim
130 words
A semiconductor light-emitting diode including a light-emitting layer having a p-n junction, comprising: a substrate; a light-reflection layer, formed on said substrate and having a plurality of Ga x Al l-x N (0≦x≦1)/BP superlattice layers of two types having different average compositions; a first mixed crystal layer, formed on said light-reflection layer and consisting of a Ga x Al y B l-x-y N z P l-z (0≦x, y, z ≦1 and x+y≦1) layer of a first conductivity type having a zinc blend type crystal structure; and a second mixed crystal layer, formed on said first mixed crystal layer and consisting of a Ga x Al y B l-x-y N z P l-z (0≦x, y, z≦1 and x+y≦1) layer of a second conductivity type having a zinc blend type crystal structure.
Claim 12
Dependent Claim
38 words
A diode according to claim 3 or 7, wherein said light-reflection layer has a multilayered structure in which said superlattice layers of the types are alternately stacked with a period which is substantially equal to the light-emitting wavelength.
Claim 13
Dependent Claim
148 words
A semiconductor light-emitting diode including a light-emitting layer having a p-n junction, comprising: a substrate; a light-reflection layer, formed on said substrate and having a plurality of Ga x Al y B l-x-y N z P l-z (0≦x, y, z≦1 and x+y ≦1) mixed crystal layers of two types having different average compositions; a first superlattice layer, formed on said light-reflection layer and being of a first conductivity type, wherein a plurality of BP and Ga x Al l-x N (0≦x≦1) layers are alternately stacked, said Ga x Al l-x N (o≦x≦1) layers having a zinc blend crystal structure; and a second superlattice layer, formed on said first superlattice layer and being of a second conductivity type, wherein a plurality of BP and Ga x Al l-x N (0≦x≦1) layers are alternately stacked, said Ga x Al l-x N (0≦x≦1) layers having a zinc blend type crystal structure.
Claim 14
Dependent Claim
148 words
A semiconductor light-emitting diode including a light-emitting layer having a p-n junction, comprising: a substrate; a light-reflection layer, formed on said substrate and having a plurality of Ga x Al y B l-x-y N z P l-z (0≦x, y, z≦1 and x+y ≦1) mixed crystal layers of two types having different average compositions; a first superlattice layer, formed on said light-reflection layer and being of a first conductivity type, wherein a plurality of BP and Ga x Al l-x N (0≦x≦1) layers are alternately stacked, said Ga x Al l-x N (o≦x≦1) layers having a zinc blend crystal structure; and a second superlattice layer, formed on said first superlattice layer and being of a second conductivity type, wherein a plurality of BP and Ga x Al l-x N (0≦x≦1) layers are alternately stacked, said Ga x Al l-x N (0≦x≦1) layers having a zinc blend type crystal structure.
Claim 15
Dependent Claim
141 words
A semiconductor light-emitting diode including a light-emitting layer having a p-n junction, comprising: a substrate; a light-reflection layer, formed on said substrate and having a plurality of Ga x Al y B l-x-y N z P l-z (0≦x, y, z≦1 and x+y ≦1) mixed crystal layers of two types having different average compositions; a first mixed crystal layer, formed on said light-reflection layer and consisting of a Ga x Al y B l-x-y N z P l-z (0≦x, y, z ≦1 and x+y≦1) layer of a first conductivity type having a zinc blend type crystal structure; and a second mixed crystal layer, formed on said first mixed crystal layer and consisting of a Ga x Al y B l-x-y N z P l-z (0≦x, y, z≦1 and x+y≦1) layer of a second conductivity type having a zinc blend type crystal structure.
Claim 16
Dependent Claim
141 words
A semiconductor light-emitting diode including a light-emitting layer having a p-n junction, comprising: a substrate; a light-reflection layer, formed on said substrate and having a plurality of Ga x Al y B l-x-y N z P l-z (0≦x, y, z≦1 and x+y ≦1) mixed crystal layers of two types having different average compositions; a first mixed crystal layer, formed on said light-reflection layer and consisting of a Ga x Al y B l-x-y N z P l-z (0≦x, y, z ≦1 and x+y≦1) layer of a first conductivity type having a zinc blend type crystal structure; and a second mixed crystal layer, formed on said first mixed crystal layer and consisting of a Ga x Al y B l-x-y N z P l-z (0≦x, y, z≦1 and x+y≦1) layer of a second conductivity type having a zinc blend type crystal structure.
Claim 17
Dependent Claim
39 words
A diode according to claim 9 or 10, wherein said light-reflection layer has a multilayered structure in which said mixed crystal layers of two types are alternately stacked with a periodicity which is substantially equal to the light-emitting wavelength.
Claim 18
Dependent Claim
147 words
A semiconductor light-emitting diode including a light-emitting layer having a p-n junction, comprising: a substrate; a first superlattice layer, formed on said substrate and being of a first conductivity type, wherein a plurality of BP and Ga x Al l-x N (0≦x≦1) layers are alternately stacked directly or via a buffer layer, said Ga x Al l-x N (0≦x≦1) layers having a zinc blend type crystal structure; a second superlattice layer, formed on said first superlattice layer and being of a second conductivity type, wherein a plurality of BP and Ga x Al l-x N (0≦x≦1) layers are alternately stacked, said Ga x Al l-x N (0≦x≦1) layers having a zinc blend type crystal structure; a contact layer consisting of a Ga v Al l-v N (0≦v≦1) layer of a Wurzite type and formed on said second superlattice layer; and an electrode formed on said contact layer.
Claim 19
Dependent Claim
147 words
A semiconductor light-emitting diode including a light-emitting layer having a p-n junction, comprising: a substrate; a first superlattice layer, formed on said substrate and being of a first conductivity type, wherein a plurality of BP and Ga x Al l-x N (0≦x≦1) layers are alternately stacked directly or via a buffer layer, said Ga x Al l-x N (0≦x≦1) layers having a zinc blend type crystal structure; a second superlattice layer, formed on said first superlattice layer and being of a second conductivity type, wherein a plurality of BP and Ga x Al l-x N (0≦x≦1) layers are alternately stacked, said Ga x Al l-x N (0≦x≦1) layers having a zinc blend type crystal structure; a contact layer consisting of a Ga v Al l-v N (0≦v≦1) layer of a Wurzite type and formed on said second superlattice layer; and an electrode formed on said contact layer.
Claim 20
Dependent Claim
139 words
A semiconductor light-emitting diode including a light-emitting layer having a p-n junction, comprising: a substrate; a first mixed crystal layer, consisting of a Ga x Al y B l-x-y N z P l-z (0≦x, y, z≦1 and x+y≦1) layer of a first conductivity type, having a zinc blend type crystal structure and formed on said substrate directly or via a buffer layer; a second mixed crystal layer, consisting of a Ga x Al y B l-x-y N z P l-z (0≦x, y, z≦1 and x+y≦1) layer of a second conductivity type, having a zinc blend type crystal structure and formed on said first mixed crystal layer; a contact layer consisting of a Ga v Al l-v N (0≦v≦1) layer of a Wurzite type and formed on said second mixed crystal layer; and an electrode formed on said contact layer.
Claim 21
Dependent Claim
139 words
A semiconductor light-emitting diode including a light-emitting layer having a p-n junction, comprising: a substrate; a first mixed crystal layer, consisting of a Ga x Al y B l-x-y N z P l-z (0≦x, y, z≦1 and x+y≦1) layer of a first conductivity type, having a zinc blend type crystal structure and formed on said substrate directly or via a buffer layer; a second mixed crystal layer, consisting of a Ga x Al y B l-x-y N z P l-z (0≦x, y, z≦1 and x+y≦1) layer of a second conductivity type, having a zinc blend type crystal structure and formed on said first mixed crystal layer; a contact layer consisting of a Ga v Al l-v N (0≦v≦1) layer of a Wurzite type and formed on said second mixed crystal layer; and an electrode formed on said contact layer.
References Cited (Backward Citations)
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