US5008542A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and system for automated measurement of whole-wafer etch pit density in GaAs
Assignee: United States Department of the Air Force
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Filing: 1989-12-20
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Granted: 1991-04-16
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Expires: 2009-12-20
Abstract
Abstract A method and system for measuring whole-wafer etch pit density (ρ D ) is disclosed in which an etch GaAs wafer is tested for fractional transmission at a plurality of points over its surface. The fractional transmission (T) of light through the wafer is detected, amplified and fed to a computer where at least two points of transmission measurement are selected for calibration. From these measurements, together with an estimate of the average etch pit size (area), the values for fractional transmission in regions of low etch pit density T O and high etch pit density T E may be calculated, and used to convert transmission data directly to etch pit density (ρ D ) according to the equation ##EQU1##
Inventors
- 👤 David C. Look
- 👤 James S. Sewell
- 👤 Millard G. Mier
- 👤 John R. Sizelove
- 👤 Dennis C. Walters
- 👤 Scott C. Dudley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:34
CPC Classifications
G; G01; G01N; G01N21/00; G01N21/84; G01N21/88; G01N21/95; G01N21/9501; G01N21/9505; G01N21/8803
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
134 words
A method for producing a map of whole-wafer etch pit density in a GaAs surface, comprising the steps of: a. focusing a light source of a predetermined wave-length at a plurality of points on said GaAs surface; b. detecting the fractional transmission (T) of light through said GaAs surface at said plurality of points; c. determining the average area (a) of etch pits in said GaAs surface; d. determining one reference transmission point (T O ) at a location on said GaAs surface having relatively high fractional transmission; e. determining one reference transmission point (T E ) at a location on said GaAs surface having relatively low fractional transmission; and f. generating a map of the etch pit density (ρ D ) at each of said plurality of points according to the equation ##EQU6##
Claim 2
Independent Claim
134 words
A method for producing a map of whole-wafer etch pit density in a GaAs surface, comprising the steps of: a. focusing a light source of a predetermined wave-length at a plurality of points on said GaAs surface; b. detecting the fractional transmission (T) of light through said GaAs surface at said plurality of points; c. determining the average area (a) of etch pits in said GaAs surface; d. determining one reference transmission point (T O ) at a location on said GaAs surface having relatively high fractional transmission; e. determining one reference transmission point (T E ) at a location on said GaAs surface having relatively low fractional transmission; and f. generating a map of the etch pit density (ρ D ) at each of said plurality of points according to the equation ##EQU6##
Claim 3
Dependent Claim
39 words
The method of claim 1, further including the step of determining etch pit density at at least two points on said GaAs surface corresponding with two of said plurality of points in which said fractional transmission (T) is detected.
Claim 4
Dependent Claim
15 words
The method of claim 1 wherein said light source has a wavelength of 1.45-1.8 μm.
Claim 5
Independent Claim
235 words
A method for producing a map of etch pit density in a GaAs wafer surface, comprising the steps of: a. determining etch pit density (ρ D ) at at least two points on said GaAs wafer surface; b. focusing a light source of predetermined wavelength at a plurality of points on said GaAs wafer surface; c. detecting the fractional transmission (T) of said light source through said GaAs wafer surface at said plurality of points; d. selecting two locations on said GaAs surface where one of said at least two points in step a is in common with one of said plurality of points in step c; one of the locations being in an area of said GaAs wafer surface having relatively high transmission and other in an area having relatively low transmission; e. determining the average area (a) of etch pits on said GaAs wafer surface; f. calibrating a reference transmission point (T O ) from the fractional transmission and the etch pit density at one of said two locations in step d where the transmission is high; g. calibrating a reference transmission point (T E ) from the fractional transmission and etch pit density at the other of said two locations in step d where the transmission is low; and h. generating a map of etch pit density (ρ D ) at each of said plurality of points according to the equation ##EQU7##
Claim 6
Independent Claim
235 words
A method for producing a map of etch pit density in a GaAs wafer surface, comprising the steps of: a. determining etch pit density (ρ D ) at at least two points on said GaAs wafer surface; b. focusing a light source of predetermined wavelength at a plurality of points on said GaAs wafer surface; c. detecting the fractional transmission (T) of said light source through said GaAs wafer surface at said plurality of points; d. selecting two locations on said GaAs surface where one of said at least two points in step a is in common with one of said plurality of points in step c; one of the locations being in an area of said GaAs wafer surface having relatively high transmission and other in an area having relatively low transmission; e. determining the average area (a) of etch pits on said GaAs wafer surface; f. calibrating a reference transmission point (T O ) from the fractional transmission and the etch pit density at one of said two locations in step d where the transmission is high; g. calibrating a reference transmission point (T E ) from the fractional transmission and etch pit density at the other of said two locations in step d where the transmission is low; and h. generating a map of etch pit density (ρ D ) at each of said plurality of points according to the equation ##EQU7##
Claim 7
Dependent Claim
15 words
The method of claim 4 wherein said light source has a wavelength of 1.45-1.8 μm.
Claim 8
Independent Claim
201 words
A system for producing maps of whole-wafer etch pit density in a GaAs wafer comprising: means for generating light of a predetermined wavelength; means for focusing said light on a surface of a GaAs wafer under test; means for moving said GaAs wafer orthogonally relative to said light source; means for detecting the fractional transmission (T) of said light through said GaAs wafer at a plurality of points on the surface thereof. manual entry means for entering the location and density of a number of etch pit points on the surface of said GaAs wafer and the average area (a) of each etch pits; means for calibrating the detected fractional transmission (T) with at least two manually entered etch pit points from identical locations said last mentioned means including means for generating at least one reference transmission point (T O ) in an area of said GaAs wafer having relatively high transmission and means for generating at least one reference transmission point (T E ) in an area of said GaAs having relatively low transmission; and means for generating a map of the etch pit density (ρ D ) at each of said plurality of points according to the equation ##EQU8##
Claim 9
Independent Claim
201 words
A system for producing maps of whole-wafer etch pit density in a GaAs wafer comprising: means for generating light of a predetermined wavelength; means for focusing said light on a surface of a GaAs wafer under test; means for moving said GaAs wafer orthogonally relative to said light source; means for detecting the fractional transmission (T) of said light through said GaAs wafer at a plurality of points on the surface thereof. manual entry means for entering the location and density of a number of etch pit points on the surface of said GaAs wafer and the average area (a) of each etch pits; means for calibrating the detected fractional transmission (T) with at least two manually entered etch pit points from identical locations said last mentioned means including means for generating at least one reference transmission point (T O ) in an area of said GaAs wafer having relatively high transmission and means for generating at least one reference transmission point (T E ) in an area of said GaAs having relatively low transmission; and means for generating a map of the etch pit density (ρ D ) at each of said plurality of points according to the equation ##EQU8##
Claim 10
Dependent Claim
22 words
The system of claim 6, wherein said means for generating light of a predetermined wavelength comprises a monochromator with tungsten-halide lamp source.
Claim 11
Dependent Claim
15 words
The system of claim 6, wherein said light has a predetermined wavelength of 1.45-1.8 μm.
Claim 12
Dependent Claim
25 words
The system of claim 8, wherein said means for focusing said light on said surface of said GaAs wafer under test comprises an optical lens.
Claim 13
Dependent Claim
26 words
The system of claim 7, wherein said means for moving said GaAs wafer orthogonally relative to said light source comprises a computer controlled X-Z drive apparatus.
Claim 14
Dependent Claim
36 words
The system of claim 10, wherein said means for detecting the fractional transmission (T) of said light through said GaAs wafer at a plurality of points comprises a cooled germanium detector coupled to a readout amplifier.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-15 | 1994-10-15 | 1995-04-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-15 | 1998-10-15 | 1999-04-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-15 | 2002-10-15 | 2003-04-16 | $7700.00 | Window Closed / Lapsed |