US5010025A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making trench JFET integrated circuit elements
Assignee: Grumman Corp
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Filing: 1989-04-03
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Granted: 1991-04-23
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Expires: 2009-04-03
Abstract
Abstract A method and construction are disclosed to form a trench gate JFET transistor. The invention comprises forming a first trench in a semiconductor substrate, forming a gate channel about the trench and forming a conductive layer upon the surface of the gate channel. The conductive layer interfaces with the gate channel to form a p-n junction. Source and drain regions are formed adjacent to a trench and disposed in electrical contact with the gate channel. An integral capacitor may be added to the construction by forming a second trench, which extends through and excavates a portion of the first trench. The drain region is extended about the surface of the second trench to remain in electrical contact with the gate channel. A layer of insulating material is applied to the second trench, which is then filled with a body of conductive material. The conductive material is insulated from the conductive layer by the insulating layer.
Inventors
- 👤 Allen L. Solomon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 15:58
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/051; H10D30/0512; H10D30/80; H10D30/83; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D84/00; H10D84/80; H10D84/811; H10D84/817; H10D84/87
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
129 words
A method of forming a trench gate JFET comprising: forming a first trench in a semiconductor substrate of a first conductivity type; forming a region of a semiconductor material of a second conductivity type within the substrate adjacent to the first trench; forming a layer of semiconductor material of a first conductivity type within the first trench upon the surface of said semiconductor material of the second conductivity type, said layer of semiconductor material of the first conductivity type interfacing with said region of semiconductor material of the second conductivity type to form a p-n junction; and forming source and drain regions within said substrate adjacent to said first trench, said gate and source regions being in contact with said region of semiconductor material of a second conductivity type.
Claim 2
Independent Claim
129 words
A method of forming a trench gate JFET comprising: forming a first trench in a semiconductor substrate of a first conductivity type; forming a region of a semiconductor material of a second conductivity type within the substrate adjacent to the first trench; forming a layer of semiconductor material of a first conductivity type within the first trench upon the surface of said semiconductor material of the second conductivity type, said layer of semiconductor material of the first conductivity type interfacing with said region of semiconductor material of the second conductivity type to form a p-n junction; and forming source and drain regions within said substrate adjacent to said first trench, said gate and source regions being in contact with said region of semiconductor material of a second conductivity type.
Claim 3
Dependent Claim
15 words
The process as recited in claim 1 wherein said substrate is formed of p-type silicon.
Claim 4
Dependent Claim
31 words
The process as recited in claim 1 wherein said region of semiconductor material of a second conductivity type is formed of n-type material formed within the first trench by shallow diffusion.
Claim 5
Dependent Claim
22 words
The process as recited in claim 1 further comprising forming a body of material within the first trench upon said conductive layer.
Claim 6
Dependent Claim
17 words
The process as recited in claim 4 wherein said body of material is formed of insulating material.
Claim 7
Dependent Claim
112 words
The process as recited in claim 1 further comprising the steps of: forming a second trench within the substrate, said second trench extending through and excavating a portion of said first trench; forming a layer of insulating material within said second trench; filling said second trench with a body of conductive material, said body of conductive material being insulated from said layer of semiconductor material of the first type by said insulating layer; said source and drain regions being formed within said substrate adjacent to said first and second trenches respectively; wherein an output taken from the body of conductive material is representative of a capacitor in series with the drain region.
Claim 8
Dependent Claim
30 words
The process as recited in claim 6 wherein said step of forming said source and drain regions comprises forming a drain region within said substrate adjacent to said second trench.
Claim 9
Independent Claim
164 words
A method of forming a trench gate JFET comprising: providing a substrate of a semiconductor material of a first conductivity type; forming a region of semiconductor material of a second conductivity type within said substrate; forming a first trench in said substrate, such that said trench is within said region of semiconductor material of a second conductivity type; forming a region of semiconductor material of a first conductivity type within said substrate adjacent to the first trench; forming a layer of semiconductor material of a second conductivity type with the first trench upon the surface of said semiconductor material of the first conductivity type, said layer of semiconductor material of the second conductivity type interfacing with said region of semiconductor material of a first conductivity type to form a p-n junction; and forming source and drain regions within said substrate adjacent to said first trench, said gate and source regions being in contact with said region of semiconductor material of the first conductivity type.
Claim 10
Independent Claim
164 words
A method of forming a trench gate JFET comprising: providing a substrate of a semiconductor material of a first conductivity type; forming a region of semiconductor material of a second conductivity type within said substrate; forming a first trench in said substrate, such that said trench is within said region of semiconductor material of a second conductivity type; forming a region of semiconductor material of a first conductivity type within said substrate adjacent to the first trench; forming a layer of semiconductor material of a second conductivity type with the first trench upon the surface of said semiconductor material of the first conductivity type, said layer of semiconductor material of the second conductivity type interfacing with said region of semiconductor material of a first conductivity type to form a p-n junction; and forming source and drain regions within said substrate adjacent to said first trench, said gate and source regions being in contact with said region of semiconductor material of the first conductivity type.
Claim 11
Dependent Claim
27 words
The process as recited in claim 8 wherein said region of semiconductor material of a second conductivity type formed within said substrate is formed of n-type material.
Claim 12
Dependent Claim
113 words
The process as recited in claim 9 further comprising the steps of: forming a second trench within the substrate, said second trench extending through and excavating a portion of said first trench; forming a layer of insulating material within said second trench; filling said second trench with a body of conductive material, said body of conductive material being insulated from said layer of semiconductor material of the second conductivity type by said insulating layer; said source and drain regions being formed within said substrate adjacent to said first and second trenches respectively; wherein an output taken from the body of conductive material is representative of a capacitor in series with the drain region.
Claim 13
Dependent Claim
30 words
The process as recited in claim 10 wherein said step of forming said source and drain regions comprises forming a drain region within said substrate adjacent to said second trench.
Claim 14
Dependent Claim
142 words
A process of forming an integral trench gate JFET transistor-capacitor comprising; forming a first trench in a semiconductor substrate; forming a gate and channel regions within the substrate adjacent to the first trench; forming a conductive layer within the first trench upon said gate channel; forming a second trench within the substrate, said second trench extending through and excavating a portion of said first trench; forming source and drain regions within said substrate adjacent to said first and second trenches respectively, said source and drain regions being in contact with said gate and channel regions; forming a layer of insulating material within said second trench; and filling said second trench with a body of conductive material, said body of conductive material being insulated from said conductive layer by said insulating layer; wherein said capacitor is connected in series with the drain region.
Claim 15
Dependent Claim
142 words
A process of forming an integral trench gate JFET transistor-capacitor comprising; forming a first trench in a semiconductor substrate; forming a gate and channel regions within the substrate adjacent to the first trench; forming a conductive layer within the first trench upon said gate channel; forming a second trench within the substrate, said second trench extending through and excavating a portion of said first trench; forming source and drain regions within said substrate adjacent to said first and second trenches respectively, said source and drain regions being in contact with said gate and channel regions; forming a layer of insulating material within said second trench; and filling said second trench with a body of conductive material, said body of conductive material being insulated from said conductive layer by said insulating layer; wherein said capacitor is connected in series with the drain region.
Claim 16
Dependent Claim
30 words
The process as recited in claim 12 wherein said step of forming said source and drain regions comprises forming a drain region within said substrate adjacent to said second trench.
Claim 17
Independent Claim
251 words
A method of forming a complementary JFET circuit including an integral and JFET-capacitor and a p-JFET, the method comprising: forming a first trench in a semi-conductor substrate; forming first gate and channel regions within the substrate adjacent to the first trench; forming a first conductive layer within the first trench upon said first gate region; forming a second trench within the substrate, said second trench extending through and excavating a portion of said first trench; forming first source and drain regions within said substrate adjacent to said first and second trenches respectively, said first source and drain regions being in contact with said first gate and channel regions; forming a first layer of insulating material within said second trench; filling said second trench with a first body of conductive material, said first body of conductive material being insulated from said conducitve layer by said insulating layer; wherein said capacitor is connected in series with the first drain region; forming a third trench in the semi-conductor substrate; forming a second gate channel within said third trench; forming a second conductive layer within said third trench upon the surface of said second gate channel, said second conductive layer interfacing with said second gate channel region to form a p-n junction; forming second source and drain regions, within said substrate adjacent to said third trench, said second gate and source regions being in contact with said second channel region; connecting said first and second drain regions; and connecting said first and second gate regions.
Claim 18
Independent Claim
251 words
A method of forming a complementary JFET circuit including an integral and JFET-capacitor and a p-JFET, the method comprising: forming a first trench in a semi-conductor substrate; forming first gate and channel regions within the substrate adjacent to the first trench; forming a first conductive layer within the first trench upon said first gate region; forming a second trench within the substrate, said second trench extending through and excavating a portion of said first trench; forming first source and drain regions within said substrate adjacent to said first and second trenches respectively, said first source and drain regions being in contact with said first gate and channel regions; forming a first layer of insulating material within said second trench; filling said second trench with a first body of conductive material, said first body of conductive material being insulated from said conducitve layer by said insulating layer; wherein said capacitor is connected in series with the first drain region; forming a third trench in the semi-conductor substrate; forming a second gate channel within said third trench; forming a second conductive layer within said third trench upon the surface of said second gate channel, said second conductive layer interfacing with said second gate channel region to form a p-n junction; forming second source and drain regions, within said substrate adjacent to said third trench, said second gate and source regions being in contact with said second channel region; connecting said first and second drain regions; and connecting said first and second gate regions.
References Cited (Backward Citations)
US3223904A
Cited
US3930300A
Cited
US3953879A
Cited
US4049476A
Cited
US4455740A
Cited
US4754310A
Cited
US4375124A
Cited
US4571815A
Cited
US4633281A
Cited
US4774556A
Cited
GB2181890A
Cited
JPS63128769A
Cited
JPS6486561A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-22 | 1994-10-22 | 1995-04-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-22 | 1998-10-22 | 1999-04-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-22 | 2002-10-22 | 2003-04-23 | $7700.00 | Window Closed / Lapsed |