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US5022979A Expired / Lapsed US ⏱️ 0.0 years remaining

Electrode for use in the treatment of an object in a plasma

Assignee: Tokyo Ohka Kogyo Co Ltd
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Filing: 1988-10-25
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Granted: 1991-06-11
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Expires: 2008-10-25
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Abstract

Abstract An electrode for use in the treatment of an object such as a semiconductor wafer through plasma reaction has at least a surface layer formed of silicon carbide. The electrode comprises a base, and the surface layer of silicon carbide is formed on a surface of the base by a CVD coating process.

Inventors

  • 👤 Isamu Hijikata
  • 👤 Akira Uehara
  • 👤 Mitsuo Samezawa

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 02:47
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32532; H01J37/32559; Y; Y10; Y10S; Y10S156/00; Y10S156/914

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 110 words
In a plasma reaction apparatus having a pair of vertically spaced apart electrodes, an upper electrode of said pair being adapted for use in the treatment of an object through plasma reaction and which is highly resistant to being modified and etched away by the plasma reaction, said upper electrode having at least an outermost surface layer formed of silicon carbide, and said upper electrode being disposed vertically above the object to be treated through plasma reaction in spaced relation therewith: said upper electrode comprising a base formed of carbon, and said surface layer of silicon carbide being formed on a surface of said base by a CVD coating process.
Claim 2
Dependent Claim 110 words
In a plasma reaction apparatus having a pair of vertically spaced apart electrodes, an upper electrode of said pair being adapted for use in the treatment of an object through plasma reaction and which is highly resistant to being modified and etched away by the plasma reaction, said upper electrode having at least an outermost surface layer formed of silicon carbide, and said upper electrode being disposed vertically above the object to be treated through plasma reaction in spaced relation therewith: said upper electrode comprising a base formed of carbon, and said surface layer of silicon carbide being formed on a surface of said base by a CVD coating process.
Claim 3
Dependent Claim 20 words
An apparatus according to claim 1, wherein said surface layer of silicon carbide is formed by an epitaxial growth process.
Claim 4
Dependent Claim 24 words
An apparatus according to claim 1, wherein said surface layer of silicon carbide has a thickness ranging from several tens to several hundreds μm.
Claim 5
Dependent Claim 94 words
An electrode for use in the treatment of an object through plasma reaction and which is highly resistant to being modified and etched away by the plasma reaction, said electrode having at least an outermost surface layer formed of silicon carbide, and said electrode being of a disk shape and having a plurality of through holes defined therein for ejecting reaction gas therethrough toward said object: said electrode comprising a base formed of carbon, and said surface layer of silicon carbide being formed on a surface of said base by a CVD coating process.
Claim 6
Dependent Claim 94 words
An electrode for use in the treatment of an object through plasma reaction and which is highly resistant to being modified and etched away by the plasma reaction, said electrode having at least an outermost surface layer formed of silicon carbide, and said electrode being of a disk shape and having a plurality of through holes defined therein for ejecting reaction gas therethrough toward said object: said electrode comprising a base formed of carbon, and said surface layer of silicon carbide being formed on a surface of said base by a CVD coating process.
Claim 7
Dependent Claim 20 words
An electrode according to claim 4, wherein each of said holes has a diameter ranging from 0.3 to 1.0 mm.
Claim 8
Dependent Claim 27 words
An electrode according to claim 4, wherein said holes are uniformly spaced at a spacing of 20 mm or less between two adjacent ones of said holes.
Claim 9
Dependent Claim 19 words
An electrode according to claim 6, wherein upper and lower ends of each of said through holes are beveled.

References Cited (Backward Citations)

US4336438A Cited
US4318767A Cited
JPS594028A Cited
US4424096A Cited
JPS61104625A Cited
JPS62109317A Cited
US4780169A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1994-06-10 1994-12-10 1995-06-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1998-06-10 1998-12-10 1999-06-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2002-06-10 2002-12-10 2003-06-11 $7700.00 Window Closed / Lapsed

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