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US5022979A
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US
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Electrode for use in the treatment of an object in a plasma
Assignee: Tokyo Ohka Kogyo Co Ltd
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Filing: 1988-10-25
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Granted: 1991-06-11
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Expires: 2008-10-25
Abstract
Abstract An electrode for use in the treatment of an object such as a semiconductor wafer through plasma reaction has at least a surface layer formed of silicon carbide. The electrode comprises a base, and the surface layer of silicon carbide is formed on a surface of the base by a CVD coating process.
Inventors
- 👤 Isamu Hijikata
- 👤 Akira Uehara
- 👤 Mitsuo Samezawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 02:47
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32532; H01J37/32559; Y; Y10; Y10S; Y10S156/00; Y10S156/914
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
110 words
In a plasma reaction apparatus having a pair of vertically spaced apart electrodes, an upper electrode of said pair being adapted for use in the treatment of an object through plasma reaction and which is highly resistant to being modified and etched away by the plasma reaction, said upper electrode having at least an outermost surface layer formed of silicon carbide, and said upper electrode being disposed vertically above the object to be treated through plasma reaction in spaced relation therewith: said upper electrode comprising a base formed of carbon, and said surface layer of silicon carbide being formed on a surface of said base by a CVD coating process.
Claim 2
Dependent Claim
110 words
In a plasma reaction apparatus having a pair of vertically spaced apart electrodes, an upper electrode of said pair being adapted for use in the treatment of an object through plasma reaction and which is highly resistant to being modified and etched away by the plasma reaction, said upper electrode having at least an outermost surface layer formed of silicon carbide, and said upper electrode being disposed vertically above the object to be treated through plasma reaction in spaced relation therewith: said upper electrode comprising a base formed of carbon, and said surface layer of silicon carbide being formed on a surface of said base by a CVD coating process.
Claim 3
Dependent Claim
20 words
An apparatus according to claim 1, wherein said surface layer of silicon carbide is formed by an epitaxial growth process.
Claim 4
Dependent Claim
24 words
An apparatus according to claim 1, wherein said surface layer of silicon carbide has a thickness ranging from several tens to several hundreds μm.
Claim 5
Dependent Claim
94 words
An electrode for use in the treatment of an object through plasma reaction and which is highly resistant to being modified and etched away by the plasma reaction, said electrode having at least an outermost surface layer formed of silicon carbide, and said electrode being of a disk shape and having a plurality of through holes defined therein for ejecting reaction gas therethrough toward said object: said electrode comprising a base formed of carbon, and said surface layer of silicon carbide being formed on a surface of said base by a CVD coating process.
Claim 6
Dependent Claim
94 words
An electrode for use in the treatment of an object through plasma reaction and which is highly resistant to being modified and etched away by the plasma reaction, said electrode having at least an outermost surface layer formed of silicon carbide, and said electrode being of a disk shape and having a plurality of through holes defined therein for ejecting reaction gas therethrough toward said object: said electrode comprising a base formed of carbon, and said surface layer of silicon carbide being formed on a surface of said base by a CVD coating process.
Claim 7
Dependent Claim
20 words
An electrode according to claim 4, wherein each of said holes has a diameter ranging from 0.3 to 1.0 mm.
Claim 8
Dependent Claim
27 words
An electrode according to claim 4, wherein said holes are uniformly spaced at a spacing of 20 mm or less between two adjacent ones of said holes.
Claim 9
Dependent Claim
19 words
An electrode according to claim 6, wherein upper and lower ends of each of said through holes are beveled.
References Cited (Backward Citations)
US4336438A
Cited
US4318767A
Cited
JPS594028A
Cited
US4424096A
Cited
JPS61104625A
Cited
JPS62109317A
Cited
US4780169A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-06-10 | 1994-12-10 | 1995-06-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-10 | 1998-12-10 | 1999-06-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-06-10 | 2002-12-10 | 2003-06-11 | $7700.00 | Window Closed / Lapsed |