US5028971A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High power photoconductor bulk GaAs switch
Assignee: United States Department of the Army
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Filing: 1990-06-04
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Granted: 1991-07-02
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Expires: 2010-06-04
Abstract
Abstract A photoconductive switch with a low threshold energy, high voltage capability and fast rise time consisting of a semiconductive substrate comprised primarily of gallium arsenide, patterned electrodes masked onto the substrate on opposite sides, a power supply and a laser that introduces laser light via fiber optic bundles to the substrate and parallel to the applied electric field.
Inventors
- 👤 Anderson H. Kim
- 👤 Maurice Weiner
- 👤 Robert J. Youmans
- 👤 Robert J. Zeto
- 👤 Michelle A. Dornath-Mohr
- 👤 Melvin J. Wade
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:08
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/10; H10F77/00; H10F77/20; H10F99/00
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
93 words
A photoconductive switch comprising: a substrate of semiconductive material having at least two opposite surfaces; a first patterned electrode placed onto a first surface of said substrate; a second patterned electrode placed onto a second surface of said substrate opposite said first surface; a power supply means for providing an electric field in a predetermined direction across the first and second patterned electrodes; and means by which the two opposite surfaces of the substrate are exposed to a radiation source of a predetermined wavelength such that said radiation is absorbed by said substrate.
Claim 2
Dependent Claim
93 words
A photoconductive switch comprising: a substrate of semiconductive material having at least two opposite surfaces; a first patterned electrode placed onto a first surface of said substrate; a second patterned electrode placed onto a second surface of said substrate opposite said first surface; a power supply means for providing an electric field in a predetermined direction across the first and second patterned electrodes; and means by which the two opposite surfaces of the substrate are exposed to a radiation source of a predetermined wavelength such that said radiation is absorbed by said substrate.
Claim 3
Dependent Claim
15 words
The photoconductive switch as in claim 1 wherein the substrate consists primarily of gallium arsenide.
Claim 4
Dependent Claim
21 words
The photoconductive switch as in claim 1 wherein the radiation source is directed parallel to the direction of said electric field.
Claim 5
Dependent Claim
31 words
The photoconductive switch as in claim 1 wherein said first and second patterned electrodes are patterned such that forty to sixty percent of the substrate is exposed to said radiation source.
Claim 6
Dependent Claim
31 words
The photoconductive switch as in claim 1 wherein said radiation source emanates from a laser and is delivered from the laser via a bundle of at least one fiber optic cable.
Claim 7
Dependent Claim
78 words
A photoconuctive switch comprising: a substrate of semiconductive material having at least two opposite surfaces; a plurality of patterned electrodes placed onto at least two surfaces of aid substrate; a power supply means for providing an electric field in a predetermined direction across the plurality of electrodes; and means by which at least two opposite surfaces of the substrate are exposed to a radiation source of predetermined wavelength such that said radiation sourced is absorbed by said substrate.
Claim 8
Dependent Claim
78 words
A photoconuctive switch comprising: a substrate of semiconductive material having at least two opposite surfaces; a plurality of patterned electrodes placed onto at least two surfaces of aid substrate; a power supply means for providing an electric field in a predetermined direction across the plurality of electrodes; and means by which at least two opposite surfaces of the substrate are exposed to a radiation source of predetermined wavelength such that said radiation sourced is absorbed by said substrate.
Claim 9
Dependent Claim
15 words
The photoconductive switch as in claim 6 wherein the substrate consists primarily of gallium arsenide.
Claim 10
Dependent Claim
41 words
A photoconductive switch as in claim 3 wherein the first and second patterned electrodes are comprised of a first layer of nickel, a layer of germanium, a first layer of gold, a layer of silver, and a second layer of gold.
Claim 11
Dependent Claim
24 words
A photoconuctive switch as in claim 8 wherein the first and second patterned electrodes are patterned in the manner exhibited in FIG. 6 herein.
Claim 12
Dependent Claim
42 words
A photoconuctive switch as in claim 90 wherein the first and second electrodes have a outer diameter and about 1 centimeter and wherein the pattern exhibited has apertures which are about 586 microns in diameter and are separated by about 150 microns.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-01 | 1994-12-31 | 1995-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-01 | 1998-12-31 | 1999-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-01 | 2002-12-31 | 2003-07-02 | $7700.00 | Window Closed / Lapsed |