Method of making a three-dimensional memory cell with integral select transistor

Claim 2

A process for fabricating an array of floating gate memory cells with integral select transistors on a substrate comprising the steps of: forming a gate oxide on said substrate; forming a plurality of first gate members on said gate oxide from a first layer of polysilicon; forming a plurality of slots in said substrate between alternate pairs of said first gate members; introducing dopants into said substrate to form elongated, parallel, spaced-apart source and drain regions in alignment with said first gate members, said drain regions being formed beneath said slots; forming elongated second gate members from a second layer of polysilicon, said second gate members being formed over, and insulated from, said first gate members and said slots.

Claim 3

The process according to claim 1 wherein said first gate members are thick enough such that capacitive coupling to said second gate members curves along the horizontal and vertical surfaces of said first gate members.

Claim 4

The process according to claim 2 wherein said first gate members are approximately 2000 Å thick.

Claim 5

The process according to claim 3 wherein said gate oxide is approximately 110 Å thick.

Claim 6

The process according to claim 4 wherein said slot is approximately 0.3 microns deep.

Claim 7

The process according to claim 5 wherein said introducing step includes implanting arsenic ions into said substrate.

Claim 8

A process for fabricating an array of floating gate memory cells with integral select transistors on a silicon substrate comprising the steps of: (a) forming a gate oxide on said substrate; (b) depositing a first layer of polysilicon over said gate oxide; (c) depositing a masking layer over said first polysilicon layer; (d) etching said first polysilicon layer to form a plurality of first gate members; (e) forming a plurality of slots in said substrate between alternate pairs of said first gate members, each of said slots having a bottom surface and a pair of sidewall surfaces; (f) implanting dopants into said substrate to form elongated, parallel, spaced-apart source and drain regions in alignment with said first gate members, said drain regions being formed beneath said bottom surface of said slots; (g) forming elongated second gate members from a second layer of polysilicon, said second gate members being formed over, and insulated from, said first gate members and said slots such that said second gate members and said sidewall surfaces form said select transistors.

Claim 9

A process for fabricating an array of floating gate memory cells with integral select transistors on a silicon substrate comprising the steps of: (a) forming a gate oxide on said substrate; (b) depositing a first layer of polysilicon over said gate oxide; (c) depositing a masking layer over said first polysilicon layer; (d) etching said first polysilicon layer to form a plurality of first gate members; (e) forming a plurality of slots in said substrate between alternate pairs of said first gate members, each of said slots having a bottom surface and a pair of sidewall surfaces; (f) implanting dopants into said substrate to form elongated, parallel, spaced-apart source and drain regions in alignment with said first gate members, said drain regions being formed beneath said bottom surface of said slots; (g) forming elongated second gate members from a second layer of polysilicon, said second gate members being formed over, and insulated from, said first gate members and said slots such that said second gate members and said sidewall surfaces form said select transistors.

Claim 10

The process according to claim 7 wherein said first gate members are thick enough such that capacitive coupling to said second gate members takes place along the horizontal and vertical surfaces of said first gate members.

Claim 11

The process according to claim 8 wherein said first gate members are approximately 2000 Å thick.

Claim 12

The method of claim 9 wherein said gate oxide is approximately 110 Å thick.

Claim 13

The method of claim 7 wherein said masking layer comprises silicon nitride.

Claim 14

The process according to claim 11 wherein said first gate members are insulated from said second gate members by an interpoly dielectric comprising a first layer of silicon dioxide, a layer of silicon nitride and a second layer of silicon dioxide.

Claim 15

The process according to claim 12 wherein said second gate members are formed generally perpendicular to said elongated source and drain regions.

Claim 16

The process according to claim 13 further comprising the step of optionally performing a threshold adjusting implant prior to the formation of said gate oxide.