Semiconductor integrated circuit device having enlarged cells formed on ends of basic cell arrays

Claim 2

A semiconductor integrated circuit device comprising: a semiconductor substrate having a principal surface which forms an internal circuit region and peripheral circuit regions; a plurality rows of basic cell arrays which have basic cells of a MOSFET type forming a matrix array and which is formed on said internal circuit region, each row of basic cell array arranged along a first direction and said each row having a gate width which is measured along a second direction which is perpendicular to said first direction; wiring channel formation regions which are located between adjacent rows of said basic cell arrays; and a special basic cell of a MOSFET type formed adjacent each end portion of said plurality of rows of said basic cell arrays, said special basic cell having a larger gate width which is measured along said second direction than said gate width of the basic cells of a respective array, wherein said special basic cell has a pair of end portions which extend along said first direction and which extend into a pair of adjacent wiring channel regions.

Claim 3

A semiconductor integrated circuit device according to claim 1, wherein said wiring channel formation regions being insulated from said basic cells by a layer of an insulator film.

Claim 4

A semiconductor integrated circuit device according to claim 1, wherein each said special basic cell is disposed so as to be contiguous with said basic cells of a respective basic cell array.

Claim 5

A semiconductor integrated circuit device according to claim 1, wherein said special basic cells are disposed so as to continue to peripheral circuits of said peripheral circuit regions and are buried under said internal circuit region through an insulator film.

Claim 6

A semiconductor integrated circuit device according to claim 1, wherein said special basic cells form a clock buffer circuit.

Claim 7

A semiconductor integrated circuit device according to claim 1, wherein said special basic cells form a delay circuit.

Claim 8

A semiconductor integrated circuit device according to claim 1, wherein each special basic cell is formed by transistors of complementary MOSFETs.

Claim 9

A semiconductor integrated circuit device according to claim 7, wherein a gate electrode of each of said complementary MOSFETs constituting said each special basic cell is formed in an interdigitated pattern.

Claim 10

A semiconductor integrated circuit device adopting a gate array scheme, wherein circuits constructed of basic cells, which are arranged in a matrix array, are connected by a plurality of layers of wiring, comprising: a semiconductor substrate having a principal surface which forms an internal circuit region and peripheral circuit regions; a plurality rows of basic cell arrays which have basic cells of a MOSFET type forming said matrix array and which is formed on said internal circuit region, each row of basic cell array arranged along a first direction and said each row having a gate width which is measured along a second direction which is perpendicular to said first direction; wiring channel formation regions which are located between adjacent rows of said basic cell arrays; and a special basic cell of a MOSFET type formed adjacent each end portion of said plurality of rows of said basic cell arrays, said special basic cell having a higher driving power capability than that of said basic cells, and said special basic cells having a larger gate width which is measured along said second direction than said gate width of the basic cells of a respective array, wherein said special basic cell has a pair of end portions which extend along said first direction and which extend into a pair of adjacent wiring channel regions.

Claim 11

A semiconductor integrated circuit device adopting a gate array scheme, wherein circuits constructed of basic cells, which are arranged in a matrix array, are connected by a plurality of layers of wiring, comprising: a semiconductor substrate having a principal surface which forms an internal circuit region and peripheral circuit regions; a plurality rows of basic cell arrays which have basic cells of a MOSFET type forming said matrix array and which is formed on said internal circuit region, each row of basic cell array arranged along a first direction and said each row having a gate width which is measured along a second direction which is perpendicular to said first direction; wiring channel formation regions which are located between adjacent rows of said basic cell arrays; and a special basic cell of a MOSFET type formed adjacent each end portion of said plurality of rows of said basic cell arrays, said special basic cell having a higher driving power capability than that of said basic cells, and said special basic cells having a larger gate width which is measured along said second direction than said gate width of the basic cells of a respective array, wherein said special basic cell has a pair of end portions which extend along said first direction and which extend into a pair of adjacent wiring channel regions.

Claim 12

A semiconductor integrated circuit device according to claim 9, wherein each special basic cell is formed by transistors of complementary MOSFETs.

Claim 13

A semiconductor integrated circuit device according to claim 10, wherein a gate electrode of each of said complementary MOSFETs constituting said each special basic cell is formed in an interdigitated pattern.

Claim 14

A semiconductor integrated circuit device according to claim 10, wherein said wiring channel formation regions being insulated from said basic cells by a layer of an insulator film.

Claim 15

A semiconductor integrated circuit device according to claim 1, wherein the MOSFETs of said special basic cells have a greater gate width to gate length ratio than that of MOSFETs of said basic cells, the gate length being measured in said first direction.

Claim 16

A semiconductor integrated circuit device according to claim 2, wherein gate electrodes of MOSFETs of said special basic cells extend substantially in the same direction as that of MOSFETs of said basic cells.

Claim 17

A semiconductor integrated circuit device according to claim 10, wherein the MOSFETs of said special basic cells have a greater gate width to gate length ratio than that of MOSFETs of said basic cells, the gate length being measured in said first direction.

Claim 18

A semiconductor integrated circuit device according to claim 12, wherein gate electrodes of the MOSFETs of said special basic cells extend substantially in the same direction as that of MOSFETs of said basic cells.