US5066566A
Expired / Lapsed
US
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Resist materials
Assignee: Nokia Bell Labs
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Filing: 1990-07-31
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Granted: 1991-11-19
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Expires: 2010-07-31
Abstract
Abstract A one component resist material useful for deep ultraviolet, x-ray, and electron radiation has been found. Such material involves a substituent that is sensitive to acid and a moiety in the chain which both induces scission and provides an acid functionally upon such scission.
Inventors
- 👤 Anthony E. Novembre
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:02
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/039; Y; Y10; Y10S; Y10S430/00; Y10S430/167; Y10S430/168
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
108 words
A process of fabricating a device comprising the steps of exposing in a pattern a radiation sensitive material to radiation, developing a pattern in said material and using said pattern in said material as a mask in a subsequent step in said fabricating process characterized in that said radiation sensitive material comprises a polymer having a backbone chain and pendant substituents wherein a moiety is present in said backbone that induces scission of said backbone to form an acid upon said exposure and developing, wherein said substituents react with acid, and wherein there is a substantial absence of an acid generator in said material other than said polymer.
Claim 2
Dependent Claim
108 words
A process of fabricating a device comprising the steps of exposing in a pattern a radiation sensitive material to radiation, developing a pattern in said material and using said pattern in said material as a mask in a subsequent step in said fabricating process characterized in that said radiation sensitive material comprises a polymer having a backbone chain and pendant substituents wherein a moiety is present in said backbone that induces scission of said backbone to form an acid upon said exposure and developing, wherein said substituents react with acid, and wherein there is a substantial absence of an acid generator in said material other than said polymer.
Claim 3
Dependent Claim
10 words
The process of claim 1 wherein said radiation comprises electrons.
Claim 4
Dependent Claim
10 words
The process of claim 1 where said radiation comprises X-radiation.
Claim 5
Dependent Claim
19 words
The process of claim 1 wherein said development comprises baking at elevated temperature followed by treatment with a solvent.
Claim 6
Dependent Claim
13 words
The process of claim 1 wherein said moiety is a sulfone functional group.
Claim 7
Dependent Claim
18 words
The process of claim 5 wherein said substituent comprises a member chosen from the group consisting of ##STR5##
Claim 8
Dependent Claim
17 words
The process of claim 1 wherein said substituent comprises a member of the group consisting of ##STR6##
Claim 9
Dependent Claim
11 words
The process of claim 1 wherein said polymer comprises a styrenesulfone.
Claim 10
Dependent Claim
12 words
The process of claim 1 wherein said subsequent step comprises plasma etching.
References Cited (Backward Citations)
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