US5084071A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
Assignee: International Business Machines Corp
•
Filing: 1990-02-23
•
Granted: 1992-01-28
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Expires: 2010-02-23
Abstract
Abstract Disclosed is a method of chem-mech polishing an article, preferably an electronic component substrate. The method includes the following steps; obtaining an article having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the article with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles wherein the abrasive particles do not include alumina, a transition metal chelated salt, a solvent for the salt, and a small but effective amount of alumina. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.
Inventors
- 👤 Anton Nenadic
- 👤 Robert W. Pasco
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:56
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/01; H10W70/02; C; C09; C09G; C09G1/00; C09G1/02; H10W70/05; H10W70/097
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
43 words
A chem-mech polishing slurry comprising: abrasive particles wherein said abrasive particles do not include alumina; a transition metal chelated salt; a solvent for said salt; and a small but effective amount of alumina to regulate the etching rate of attack of said slurry.
Claim 2
Dependent Claim
43 words
A chem-mech polishing slurry comprising: abrasive particles wherein said abrasive particles do not include alumina; a transition metal chelated salt; a solvent for said salt; and a small but effective amount of alumina to regulate the etching rate of attack of said slurry.
Claim 3
Dependent Claim
17 words
The slurry of claim 1 wherein the maximum amount of said alumina present is 1 weight percent.
Claim 4
Dependent Claim
17 words
The slurry of claim 1 wherein the maximum amount of said alumina present is 0.25 weight percent.
Claim 5
Dependent Claim
19 words
The slurry of claim 1 wherein said alumina is present in the range of 0.001 to 1 weight percent.
Claim 6
Dependent Claim
14 words
The slurry of claim 4 wherein said range is 0.003 to 0.25 weight percent.
Claim 7
Dependent Claim
14 words
The slurry of claim 5 wherein said range is 0.03 to 0.06 weight percent.
Claim 8
Dependent Claim
39 words
The slurry of claim 1 wherein said transition metal chelated salt is present in the range of about 0.1 to 10 weight percent and said abrasive particles are present in the range of about 1 to 30 weight percent.
Claim 9
Dependent Claim
26 words
The slurry of claim 1 wherein said transition metal in said transition metal chelated salt is selected from the group consisting of iron, cobalt and nickel.
Claim 10
Dependent Claim
20 words
The slurry of claim 8 wherein said transition metal chelated salt is ammonium iron EDTA and said slurry is aqueous.
Claim 11
Dependent Claim
25 words
The slurry of claim 1 wherein said abrasive particles are selected from the group consisting of silica, ceria, silicon carbide, silicon nitride and iron oxide.
Claim 12
Independent Claim
109 words
A method of chem-mech polishing an article, the method comprising the following steps: obtaining an article having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting said article with a polishing pad while contacting said article with a slurry containing said etchant wherein said slurry comprises abrasive particles, wherein said abrasive particles do not include alumina, a transition metal chelated salt, a solvent for said salt and a small but effective amount of alumina to regulate the etching rate of attack of said slurry, said chem-mech polishing causing said at least two features to be substantially coplanar.
Claim 13
Independent Claim
109 words
A method of chem-mech polishing an article, the method comprising the following steps: obtaining an article having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting said article with a polishing pad while contacting said article with a slurry containing said etchant wherein said slurry comprises abrasive particles, wherein said abrasive particles do not include alumina, a transition metal chelated salt, a solvent for said salt and a small but effective amount of alumina to regulate the etching rate of attack of said slurry, said chem-mech polishing causing said at least two features to be substantially coplanar.
Claim 14
Dependent Claim
23 words
The method of claim 11 further comprising the step of mechanically polishing said at least two features after the step of chem-mech polishing.
Claim 15
Dependent Claim
17 words
The method of claim 11 wherein the maximum amount of said alumina present is 1 weight percent.
Claim 16
Dependent Claim
16 words
The method of claim 11 wherein the maximum amount of said alumina present 0.25 weight percent.
Claim 17
Dependent Claim
19 words
The method of claim 11 wherein said alumina is present in the range of 0.001 to 1 weight percent.
Claim 18
Dependent Claim
14 words
The method of claim 15 wherein said range is 0.003 to 0.25 weight percent.
Claim 19
Dependent Claim
14 words
The method of claim 16 wherein said range is 0.03 to 0.06 weight percent.
Claim 20
Dependent Claim
39 words
The method of claim 11 wherein said transition metal chelated salt is present in the range of about 0.1 to 10 weight percent and said abrasive particles are present in the range of about 1 to 30 weight percent.
Claim 21
Dependent Claim
26 words
The method of claim 11 wherein said transition metal in said transition metal chelated salt is selected from the group consisting of iron, cobalt and nickel.
Claim 22
Dependent Claim
20 words
The method of claim 19 wherein said transition metal chelated salt is ammonium iron EDTA and said slurry is aqueous.
Claim 23
Dependent Claim
25 words
The method of claim 11 wherein said abrasive particles are selected from the group consisting of silica, ceria, silicon carbide, silicon nitride and iron oxide.
Claim 24
Dependent Claim
13 words
The method of claim 11 wherein said article is an electronic component substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-27 | 1995-07-29 | 1996-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-27 | 1999-07-29 | 2000-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-27 | 2003-07-29 | 2004-01-28 | $7700.00 | Window Closed / Lapsed |