US5089866A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Two-transistor type non-volatile semiconductor memory
Assignee: NEC Corp
•
Filing: 1990-07-27
•
Granted: 1992-02-18
•
Expires: 2010-07-27
Abstract
Abstract A non-volatile semiconductor memory comprises a P-type semiconductor substrate having an active region defined by a field isolation region, and a non-volatile memory cell composed of a floating gate N-channel transistor for programming and a floating gate P-channel transistor for reading. The floating gate N-channel transistor is formed in the active region of the substrate. The flaoting gate P-channel transistor includes a source region and a drain region both formed in a conductive semiconductor layer located in the field isolation region, a floating gate formed through an insulating layer above a portion of the conductive semiconductor layer between the source region and the drain region, and a control gate formed through an insulating layer above the floating gate. The floating gate of the P-channel transistor is formed of an extension of a floating gate of the N-channel transistor, and the control gate of the P-channel transistor is connected commonly to a control gate of the N-channel transistor.
Inventors
- 👤 Shoichi Iwasa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:46
CPC Classifications
H; H10; H10B; H10B69/00; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/685
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
228 words
A non-volatile semiconductor memory comprising a semiconductor substrate of a first conduction type having an active region defined by a field isolation region formed on a principal surface of the substrare; and a non-volatile memory cell composed of a first transistor for programming and a second transistor for reading, said first transistor including a source region and a drain region both formed in said active region separately from each other, both of said source region and said drain region being of a second conduction type different from said first conduction type, a floating gate formed through an insulating layer above a portion of said active region between said source region and said drain region, and a control gate formed through an insulating layer above said floating gate, and said second transistor including a source region and a drain region both formed in a conductive semiconductor layer located in said field isolation region, a floating gate formed through an insulating layer above a portion of said conductive semiconductor layer between said source region and said drain region, and a control gate formed through an insulating layer above said floating gate, said floating gate of said second transistor being formed of an extension of said floating gate of said first transistor, and said control gate of said second transistor being connected commonly to said control gate of said first transistor.
Claim 2
Dependent Claim
228 words
A non-volatile semiconductor memory comprising a semiconductor substrate of a first conduction type having an active region defined by a field isolation region formed on a principal surface of the substrare; and a non-volatile memory cell composed of a first transistor for programming and a second transistor for reading, said first transistor including a source region and a drain region both formed in said active region separately from each other, both of said source region and said drain region being of a second conduction type different from said first conduction type, a floating gate formed through an insulating layer above a portion of said active region between said source region and said drain region, and a control gate formed through an insulating layer above said floating gate, and said second transistor including a source region and a drain region both formed in a conductive semiconductor layer located in said field isolation region, a floating gate formed through an insulating layer above a portion of said conductive semiconductor layer between said source region and said drain region, and a control gate formed through an insulating layer above said floating gate, said floating gate of said second transistor being formed of an extension of said floating gate of said first transistor, and said control gate of said second transistor being connected commonly to said control gate of said first transistor.
Claim 3
Dependent Claim
35 words
A non-volatile semiconductor memory claimed in claim 1 wherein said conductive semiconductor layer in which both of said source region and said drain region of said second transistor is deposited on said field isolation region.
Claim 4
Dependent Claim
86 words
A non-volatile semiconductor memory claimed in claim 1 wherein said conductive semiconductor layer in which both of said source region and said drain region of said second transistor is formed in a trench formed within said field isolation region, and the insulating layer between said conductive semiconductor layer and said floating gate of said second transistor is formed within said trench above said conductive semiconductor layer so that an upper surface of said insulating layer is coplanar with an upper surface of said field isolation region.
Claim 5
Dependent Claim
88 words
A non-volatile semiconductor memory claimed in claim 1 wherein said control gate of said first transistor and said control gate of said second transistor are formed of the same conducting layer which forms a word line, and wherein one of said source and said drain of said first transistor is connected to a writing digit line, and said conductive semiconductor layer extends to form a reading digit line so that said source and said drain of said second transistor is connected in series in said reading digit line.
Claim 6
Dependent Claim
73 words
A non-volatile semiconductor memory claimed in claim 4 further including an interlayer insulator provided to cover said control gate of said first transistor and said control gate of said second transistor and said principal surface of said substrate, and a conductor formed on said interlayer insulator so as to form said writing digit line and connected through a contact hole to said one of said source and said drain of said first transistor.
Claim 7
Dependent Claim
77 words
A non-volatile semiconductor memory claimed in claim 5 wherein a source region interconnection region is formed on said principal surface of said substrate to extend in a direction substantially perpendicular to a direction of said conductor of said writing digit line, so that source regions of first transistors arranged in a line along said direction substantially perpendicular to the direction of said conductor of said writing digit line are mutually interconnected by said source region interconnection region.
Claim 8
Dependent Claim
59 words
A non-volatile semiconductor memory claimed in claim 5 wherein a buried source region is formed in said substrate under each of field isolation regions so that source regions of first transistors arranged in a line along said direction substantially perpendicular to a direction of said conductor of said writing digit line are mutually interconnected by said buried source regions.
References Cited (Backward Citations)
US4778775A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-17 | 1995-08-19 | 1996-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-17 | 1999-08-19 | 2000-02-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-17 | 2003-08-19 | 2004-02-18 | $7700.00 | Window Closed / Lapsed |