US5094966A
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Method for the manufacture of an insulated gate field effect semiconductor device using photo enhanced CVD
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1990-08-07
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Granted: 1992-03-10
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Expires: 2010-08-07
Abstract
Abstract A method of manufacturing an TGFET is described. The gate electrode comprises Mo, Ti, W, MOSi 2 , WSi 2 , TiSi 2 or mixtures thereof formed on a photo-CVD nitride layer.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 02:33
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01344; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/60; H10D64/01304; H10D64/01316; H10D64/01318; H10D64/0132; H10D64/60; H10D64/66; H10D64/665; H10D64/667; H10D64/668; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10D64/01346
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
105 words
A method of manufacturing insulating gate field effect semiconductor devices comprising a source region, a channel region, a drain region, a gate insulating layer, and gate electrode, said method comprising forming said gate insulating layer from (a) a silicon oxide layer formed on the channel region and (b) a nitride layer formed on the silicon oxide layer by photo-CVD to a thickness of 30-400 angstroms and then forming said gate electrode on said nitride layer where the gate electrode is made from a material selected from the group consisting of Mo, Ti, W, MoSi 2 , WSi 2 , TiSi 2 , and combinations thereof.
Claim 2
Independent Claim
105 words
A method of manufacturing insulating gate field effect semiconductor devices comprising a source region, a channel region, a drain region, a gate insulating layer, and gate electrode, said method comprising forming said gate insulating layer from (a) a silicon oxide layer formed on the channel region and (b) a nitride layer formed on the silicon oxide layer by photo-CVD to a thickness of 30-400 angstroms and then forming said gate electrode on said nitride layer where the gate electrode is made from a material selected from the group consisting of Mo, Ti, W, MoSi 2 , WSi 2 , TiSi 2 , and combinations thereof.
Claim 3
Dependent Claim
25 words
A method as in claim 1 wherein said source and drain regions are formed after formation of said gate insulating layer and said gate electrode.
Claim 4
Dependent Claim
36 words
A method as in claim 1 wherein said silicon oxide layer is formed by photo CVD at 25° to 1,000° C. and 0.1 to 100 torr, using an ultraviolet ray with 400 nm or less wavelength.
Claim 5
Dependent Claim
15 words
The method of claim 1 where said nitride layer comprises silicon nitride or aluminum nitride.
Claim 6
Dependent Claim
21 words
A method as in claim 4 where said nitride layer is photo-CVD formed from a gas mixture of ammonia and disilane.
Claim 7
Dependent Claim
19 words
A method as in claim 5 where said gas mixture is maintained at pressure of 0.1 to 100 Torr.
Claim 8
Dependent Claim
22 words
A method as in claim 4 where said nitride layer is photo-CVD formed from a gas mixture of ammonia and methyl aluminum.
Claim 9
Dependent Claim
19 words
A method as in claim 7 where said gas mixture is maintained at pressure of 0.1 to 100 Torr.
Claim 10
Dependent Claim
12 words
A method as in claim 6 where said channel region is silicon.
Claim 11
Independent Claim
90 words
A method of manufacturing insulated gate field effect semiconductor devices comprising a source region, a channel region, a drain region, a gate insulating layer, and gate electrode, said method comprising forming said gate insulating layer where the gate insulating layer includes a nitride layer formed adjacent the gate electrode and where the nitride layer is formed by photo CVD and where said gate electrode is formed from a material selected from the group consisting of Mo, Ti, W, WSi 2 , MoSi 2 , TiSi 2 , and combinations thereof.
Claim 12
Independent Claim
90 words
A method of manufacturing insulated gate field effect semiconductor devices comprising a source region, a channel region, a drain region, a gate insulating layer, and gate electrode, said method comprising forming said gate insulating layer where the gate insulating layer includes a nitride layer formed adjacent the gate electrode and where the nitride layer is formed by photo CVD and where said gate electrode is formed from a material selected from the group consisting of Mo, Ti, W, WSi 2 , MoSi 2 , TiSi 2 , and combinations thereof.
Claim 13
Dependent Claim
15 words
The method of claim 10 wherein said nitride layer comprises silicon nitride or aluminum nitride.
Claim 14
Dependent Claim
21 words
A method as in claim 11 where said nitride layer is photo-CVD formed from a gas mixture of ammonia and disilane.
Claim 15
Dependent Claim
19 words
A method as in claim 12 where said gas mixture is maintained at pressure of 0.1 to 100 Torr.
Claim 16
Dependent Claim
22 words
A method as in claim 11 where said nitride layer is photo-CVD formed from a gas mixture of ammonia and methyl aluminum.
Claim 17
Dependent Claim
19 words
A method as in claim 14 where said gas mixture is maintained at pressure of 0.1 to 100 Torr.
Claim 18
Dependent Claim
12 words
A method as in claim 10 where said channel region comprises silicon.
Claim 19
Dependent Claim
32 words
A method as in claim 10 wherein said photo-CVD layer is formed at 25° to 1,000° C. and 0.1 to 100 torr, using an ultraviolet ray with 400 nm or less wavelength.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-03-10 | 1995-09-09 | 1996-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-10 | 1999-09-09 | 2000-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-10 | 2003-09-09 | 2004-03-10 | $7700.00 | Window Closed / Lapsed |