US5096740A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Production of cubic boron nitride films by laser deposition
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-01-23
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Granted: 1992-03-17
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Expires: 2011-01-23
Abstract
Abstract A highly pure cubic boron nitride film is formed on a substrate by a method which comprises irradiating an excimer laser on a target comprising boron atoms and optionally nitrogen atom and depositing cubic boron nitride on a substrate which is placed to face the target.
Inventors
- 👤 Syoji Nakagama
- 👤 Nobuhiko Fujita
- 👤 Naohiro Toda
- 👤 Akira Nakayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 07:18
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/24; C23C14/28; C23C14/06; C23C14/0641; C23C14/0647
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
65 words
A method for producing a cubic boron nitride film on a substrate comprising irradiating an excimer laser on a target comprising boron atoms and nitrogen atoms to deposit cubic boron nitride on said substrate facing said target. wherein said substrate is at a temperature of from 300° to 1300° C. and said laser has a power density of from 0.5 to 20 J/cm 2 .
Claim 2
Independent Claim
65 words
A method for producing a cubic boron nitride film on a substrate comprising irradiating an excimer laser on a target comprising boron atoms and nitrogen atoms to deposit cubic boron nitride on said substrate facing said target. wherein said substrate is at a temperature of from 300° to 1300° C. and said laser has a power density of from 0.5 to 20 J/cm 2 .
Claim 3
Dependent Claim
16 words
The method according to claim 1, wherein a deposition pressure is from 0.001 to 10 Torr.
Claim 4
Independent Claim
79 words
A method for producing a cubic boron nitride film on a substrate comprising irradiating an excimer laser on a target comprising boron atoms to deposit cubic boron nitride on said substrate facing said target, wherein a discharge of a gas comprising a nitrogen atom is formed between said target and said substrate; said substrate is at a temperature of from 300° to 1300° C.; and said laser has a power density of from 0.5 to 20 J/cm 2 .
Claim 5
Independent Claim
79 words
A method for producing a cubic boron nitride film on a substrate comprising irradiating an excimer laser on a target comprising boron atoms to deposit cubic boron nitride on said substrate facing said target, wherein a discharge of a gas comprising a nitrogen atom is formed between said target and said substrate; said substrate is at a temperature of from 300° to 1300° C.; and said laser has a power density of from 0.5 to 20 J/cm 2 .
Claim 6
Dependent Claim
17 words
The method according to claim 3, wherein a deposition pressure is from 10 -5 to 10 Torr.
Claim 7
Dependent Claim
19 words
The method according to claim 3, wherein said gas comprising the nitrogen atom is nitrogen gas or ammonia gas.
Claim 8
Independent Claim
72 words
A method for producing a cubic boron nitride film on a substrate comprising irradiating an excimer laser on a target comprising boron atoms to deposit cubic boron nitride on said substrate facing said target, wherein nitrogen ions are irradiated on a surface of said substrate; said substrate is at a temperature of from 300° to 1300° C.; and said laser has a power density of from 0.5 to 20 J/cm 2 .
Claim 9
Independent Claim
72 words
A method for producing a cubic boron nitride film on a substrate comprising irradiating an excimer laser on a target comprising boron atoms to deposit cubic boron nitride on said substrate facing said target, wherein nitrogen ions are irradiated on a surface of said substrate; said substrate is at a temperature of from 300° to 1300° C.; and said laser has a power density of from 0.5 to 20 J/cm 2 .
Claim 10
Dependent Claim
17 words
The method according to claim 6, wherein a deposition pressure is from 10 -5 to 10 Torr.
Claim 11
Independent Claim
91 words
A method for producing a cubic boron nitride film on a substrate comprising irradiating an excimer laser on a target comprising boron atoms in an atmosphere containing a gas comprising nitrogen atoms to deposit cubic boron nitride on said substrate facing said target, wherein said substrate is at a temperature of from 300° to 1300° C.; a heated filament having a temperature of from 1700° to 2300° C.; is provided between said target and said substrate; and said laser has a power density of from 0.5 to 20 J/cm 2 .
Claim 12
Independent Claim
91 words
A method for producing a cubic boron nitride film on a substrate comprising irradiating an excimer laser on a target comprising boron atoms in an atmosphere containing a gas comprising nitrogen atoms to deposit cubic boron nitride on said substrate facing said target, wherein said substrate is at a temperature of from 300° to 1300° C.; a heated filament having a temperature of from 1700° to 2300° C.; is provided between said target and said substrate; and said laser has a power density of from 0.5 to 20 J/cm 2 .
Claim 13
Dependent Claim
33 words
The method according to claim 8, wherein a gas comprising at least one element selected from the group consisting of hydrogen, fluorine and rare-gas elements is supplied between said target and said substrate.
Claim 14
Dependent Claim
15 words
The method according to claim 9, wherein said target contains hydrogen atoms and/or fluorine atoms.
Claim 15
Independent Claim
106 words
A method for producing a cubic boron nitride film on a substrate comprising irradiating an excimer laser on a target comprising boron atoms in an atmosphere containing a gas comprising nitrogen atoms to deposit cubic boron nitride on a substrate facing said target, wherein a heated filament having a temperature of from 500° to 1700° C., is provided between said target and said substrate; a negative direct current voltage or a radio frequency voltage is applied to said filament; said substrate is at a temperature of from 300° to 1300° C.; and said laser has a power density of from 0.5 to 20 J/cm 2 .
Claim 16
Independent Claim
106 words
A method for producing a cubic boron nitride film on a substrate comprising irradiating an excimer laser on a target comprising boron atoms in an atmosphere containing a gas comprising nitrogen atoms to deposit cubic boron nitride on a substrate facing said target, wherein a heated filament having a temperature of from 500° to 1700° C., is provided between said target and said substrate; a negative direct current voltage or a radio frequency voltage is applied to said filament; said substrate is at a temperature of from 300° to 1300° C.; and said laser has a power density of from 0.5 to 20 J/cm 2 .
Claim 17
Dependent Claim
33 words
The method according to claim 11, wherein a gas comprising at least one element selected from the group consisting of hydrogen, fluorine and rare-gas elements is supplied between said target and said substrate.
Claim 18
Dependent Claim
15 words
The method according to claim 11, wherein said target contains hydrogen atoms and/or fluorine atoms.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1995-03-17 | 1995-09-16 | 1996-03-17 | $2000.00 | Window Closed / Lapsed |
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