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US5101602A Expired / Lapsed US ⏱️ 0.0 years remaining

Foam backing for use with semiconductor wafers

Assignee: Shin-Etsu Handotai Co Ltd
•
Filing: 1991-04-19
•
Granted: 1992-04-07
•
Expires: 2011-04-19
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Abstract

Abstract A backing pad be used in a holding jig for holding a semiconductor wafer in the step of mirror polishing comprises a hydrophobic foam, possessed rigidity such that the difference between the thickness, T 1 , thereof under a load of 300 gf/cm 2 and the thickness, T 2 , thereof under a load of 1,800 gf/cm 2 , (T 1 -T 2 ), is in the range of from 1 to 100 μm, and has holes formed therein in a diameter in the range of 10 to 30 μm through the wafer-holding surface thereof. The polishing of a semiconductor is effected by a method which comprises preparing a finished backing pad by the precision surface machining operation, setting the semiconductor wafer on a wafer holding jig having a template containing at least one wafer-positioning hole fixed on a carrier plate in such a manner that the backing pad enters the positioning hole, and polishing the semiconductor wafer.

Inventors

  • 👤 Hiromasa Hashimoto

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 00:22
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/129; B; B24; B24B; B24B37/00; B24B37/27; B24B37/30; B24B41/00; B24B41/06; B24B41/068

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 104 words
A backing pad having a wafer-holding surface for use in a holding jig for holding a semiconductor wafer in a step of mirror polishing the semiconductor wafer, which said backing pad comprises a hydrophobic foam, possessing rigidity such that the difference, (T 1 -T 2 ), between a thickness, T 1 , thereof under a load of 300 gf/cm 2 and a thickness, T 2 , thereof under a load of 1,800 gf/cm 2 , is in the range from 1 to 100 μm, having pores formed therein having a diameter in the range of 10 to 30 μm through the wafer-holding surface thereof.
Claim 2
Dependent Claim 104 words
A backing pad having a wafer-holding surface for use in a holding jig for holding a semiconductor wafer in a step of mirror polishing the semiconductor wafer, which said backing pad comprises a hydrophobic foam, possessing rigidity such that the difference, (T 1 -T 2 ), between a thickness, T 1 , thereof under a load of 300 gf/cm 2 and a thickness, T 2 , thereof under a load of 1,800 gf/cm 2 , is in the range from 1 to 100 μm, having pores formed therein having a diameter in the range of 10 to 30 μm through the wafer-holding surface thereof.
Claim 3
Dependent Claim 88 words
A backing pad according to claim 1 wherein said backing pad has a shape of a disk, and wherein the difference between a maximum and a minimum, (TV 5 ), of thickness of said backing pad measured at a total of five points, i.e. one point at a center thereof and four points at a n inward distance of 5 mm from terminals of two perpendicularly intersecting diameters thereof, after one minute's exertion thereto of a load of 300 gf/cm 2 , is not more than 1 μm.

References Cited (Backward Citations)

US3924362A Cited
US4893436A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-04-07 1995-10-07 1996-04-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-04-07 1999-10-07 2000-04-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-04-07 2003-10-07 2004-04-07 $7700.00 Window Closed / Lapsed

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