US5103274A
Expired / Lapsed
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Self-aligned source process and apparatus
Assignee: Intel Corp
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Filing: 1991-03-20
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Granted: 1992-04-07
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Expires: 2011-03-20
Abstract
Abstract A method and apparatus for self-aligning a source region with a field oxide region and a polysilicon gate and word line in a semiconductor device. This method and apparatus allows reduced memory cell size and improved device density by substantially eliminating the bird's beak encroachment and corner rounding effects usually found between neighboring cells due to inadequacies in the prior art photolighography process.
Inventors
- 👤 Daniel N. Tang
- 👤 Wen-Juei Lu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 11:38
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/10; H10B41/30; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0411; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
155 words
A memory cell formed in a silicon substrate of a first conductivity type comprising: first and second spaced-apart substantially parallel isolation regions formed in said substrate, said first and second spaced-apart substantially parallel isolation regions each having a substantially rectangular shape and defining a longitudinal channel therebetween and each said isolation region having at least one side and at least one end; a gate member extending latitudinally across said channel from said at least one said side of said first isolation region to said at least one said side of said second isolation region, said gate member having at least one end vertically coincident to said at least one end of each of said isolation regions; a third region of a second conductivity type, said third region formed in said substrate coincident to said at least one end of each of said isolation regions and to said at least one end of said gate member.
Claim 2
Dependent Claim
155 words
A memory cell formed in a silicon substrate of a first conductivity type comprising: first and second spaced-apart substantially parallel isolation regions formed in said substrate, said first and second spaced-apart substantially parallel isolation regions each having a substantially rectangular shape and defining a longitudinal channel therebetween and each said isolation region having at least one side and at least one end; a gate member extending latitudinally across said channel from said at least one said side of said first isolation region to said at least one said side of said second isolation region, said gate member having at least one end vertically coincident to said at least one end of each of said isolation regions; a third region of a second conductivity type, said third region formed in said substrate coincident to said at least one end of each of said isolation regions and to said at least one end of said gate member.
Claim 3
Dependent Claim
21 words
The memory cell of claim 1 wherein said first conductivity type is n-type and said said second conductivity type is p-type.
Claim 4
Dependent Claim
12 words
The memory cell of claim 2 wherein said gate member comprises polysilicon.
Claim 5
Dependent Claim
19 words
The memory cell of claim 3 wherein said first and second substantially parallel isolation regions comprise field oxide regions.
Claim 6
Dependent Claim
14 words
The memory cell of claim 4 wherein said third region is a source region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-07 | 1995-10-07 | 1996-04-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-07 | 1999-10-07 | 2000-04-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-07 | 2003-10-07 | 2004-04-07 | $7700.00 | Window Closed / Lapsed |