US5111428A
Expired / Lapsed
US
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High density NOR type read only memory data cell and reference cell network
Assignee: Silicon Integrated Systems Corp
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Filing: 1990-07-10
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Granted: 1992-05-05
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Expires: 2010-07-10
Abstract
Abstract Disclosed is a high density NOR type read only memory data cell and reference cell network, in which every single data cell of the data cell network is comprised of a MOSFET the gate of which is connected to a wordline and the source and drain of which are selectively connected through buried N+ to a bitline and a voltage source (ground line or power line) permitting the sources of same group of MOSFETs to be connected together through a buried N+ and the drains of which to be connected together through another buried N+ to form a NOR type of structure so as to eliminate possible contacts and reduce space occupation. The design of reference cell network and the connection of the data cell network eliminate the isolation between different groups of MOSFETs so as to increase the density of data cells and reduce the manufacturing cost. By means of buried N+ bitline connection, the implantation of coding can be made as late as the conventional NAND type to that delivery time can be shortened.
Inventors
- 👤 Wei-Chen Liang
- 👤 I-Bin Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 04:29
CPC Classifications
G; G11; G11C; G11C17/00; G11C17/08; G11C17/10; G11C17/12; G11C17/126; H; H10; H10B; H10B20/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
161 words
A high density NOR type read only memory data cell and reference cell network comprising a data cell network coupled with a reference cell network, said data cell network being comprised of a plurality of groups of data cells each of which is comprised of a MOSFET which has a gate connected to a wordline, a source and a drain selectively connected to a bitline and a voltage source through a first buried conductor, said voltage source being a ground line or power line, wherein the sources of the MOSFETs of the same group are respectively connected together through a second buried conductor and the drains of which are respectively connected together through a third buried conductor to further couple with the connected sources through a NOR type connection to reduce space occupation, and wherein the data in the data cell network is identified by comparing the difference in electric current between the reference cell network and the data cell network.
Claim 2
Dependent Claim
161 words
A high density NOR type read only memory data cell and reference cell network comprising a data cell network coupled with a reference cell network, said data cell network being comprised of a plurality of groups of data cells each of which is comprised of a MOSFET which has a gate connected to a wordline, a source and a drain selectively connected to a bitline and a voltage source through a first buried conductor, said voltage source being a ground line or power line, wherein the sources of the MOSFETs of the same group are respectively connected together through a second buried conductor and the drains of which are respectively connected together through a third buried conductor to further couple with the connected sources through a NOR type connection to reduce space occupation, and wherein the data in the data cell network is identified by comparing the difference in electric current between the reference cell network and the data cell network.
Claim 3
Dependent Claim
42 words
The high density NOR type read only memory data cell and reference cell network of claim 1, said first, second and third buried conductors are formed of conductor material produced before the formation of the gate, which gate is formed of poly-si.
Claim 4
Dependent Claim
48 words
The high density NOR type read only memory data cell and reference cell network of claim 1, wherein the identification of the data in said data cell network is determined according to the value of electric current measured but not determined according to the availability of electric current.
Claim 5
Dependent Claim
65 words
The high density NOR type read only memory data cell and reference cell network of claim 1, wherein the selective connection of the source and drain of the MOSFET of each data cell to a bitline and a voltage source through a buried conductor is to connect the sources and drains of one or some specific groups of MOSFETs to a bitline and voltage source.
Claim 6
Dependent Claim
54 words
The high density NOR type read only memory data cell and reference cell network of claim 1, wherein the design of the reference cell network is to set up a reference value for electric current so as to achieve the comparison in electric current and the identification of the data in the data cell.
Claim 7
Dependent Claim
50 words
The high density NOR type read only memory data cell and reference cell network of claim 1, wherein a group of MOSFETs designates the MOSFETs which are connected together through a buried conductor by means of a NOR connection and the quantity of which can be determined according to requirement.
References Cited (Backward Citations)
USRE33261E
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-05 | 1995-11-04 | 1996-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-05 | 1999-11-04 | 2000-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-05 | 2003-11-04 | 2004-05-05 | $7700.00 | Window Closed / Lapsed |