US5116457A
Expired / Lapsed
US
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Semiconductor transducer or actuator utilizing corrugated supports
Assignee: IC Sensors Inc
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Filing: 1991-08-30
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Granted: 1992-05-26
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Expires: 2011-08-30
Abstract
Abstract A semiconductor transducer or acutator is disclosed. The transducer and actuator each include a deflecting member with corrugations producing increased vertical travel which is a linear function of applied force. An accurate and easily controlled method that is insensitive to front-to-back alignment is also disclosed for forming uniform corrugations of precise thickness; independent of the thickness of the deflecting member. The cross-sectional shape of the corrugations is not limited by the etching technique, so that any configuation thereof is enabled.
Inventors
- 👤 John H. Jerman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 15:14
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0072; G01L9/0073; G01L9/0042; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/924; Y10S438/928; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49103
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
92 words
A method for forming at least one corrugation in a semiconductor material comprising the steps of: (a) masking a first surface of said semiconductor material in accordance with a predetermined pattern; (b) etching said first surface in accordance with said predetermined pattern to provide a predetermined profile on said first surface; (c) removing said mask from said first surface; (d) providing an etch stop on said surface in accordance with said predetermined profile; and (e) etching second surface that is opposite said first surface to said etch stop to form said corrugation.
Claim 2
Independent Claim
92 words
A method for forming at least one corrugation in a semiconductor material comprising the steps of: (a) masking a first surface of said semiconductor material in accordance with a predetermined pattern; (b) etching said first surface in accordance with said predetermined pattern to provide a predetermined profile on said first surface; (c) removing said mask from said first surface; (d) providing an etch stop on said surface in accordance with said predetermined profile; and (e) etching second surface that is opposite said first surface to said etch stop to form said corrugation.
Claim 3
Dependent Claim
28 words
The method of claim 1 further comprising the step of providing a mask on said second surface after said etch stop is provided to form a support member.
Claim 4
Dependent Claim
13 words
The method of claim 1 wherein step (a) comprises oxidizing said semiconductor material.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein step (b) comprises etching said semiconductor material with a plasma etchant.
Claim 6
Dependent Claim
26 words
The method of claim 1 wherein step (d) comprises diffusing an etch stop in said material to a depth of between 0.3 μm and 20 μm.
Claim 7
Dependent Claim
28 words
The method of claim 1 wherein step (d) comprises diffusing an etch stop in said material to a depth determined by the depth of a diffused semiconductor dopant.
Claim 8
Dependent Claim
35 words
The method of claim 1 wherein step (d) comprises the deposition of a thin film material conforming to said predetermined profile, said thin film material being unreactive with said second surface etching of step (e).
Claim 9
Dependent Claim
33 words
The method of claim 7 wherein said thin film material is selected from the group consisting of sputtered metal film, evaporated metal film, plated metal film vapor deposited dielectric film, and polymer coating.
Claim 10
Dependent Claim
32 words
The method of claim 1 wherein step (d) comprises forming said deflecting member and said corrugations from the group consisting of sputtered metal, evaported metal, plated metal, vapor deposited dielectric, and polymers.
Claim 11
Dependent Claim
14 words
The method of claim 1 wherein step (e) comprises anisotropically etching said opposite surface.
Claim 12
Dependent Claim
14 words
The method of claim 1 wherein step (e) comprises isotropically etching said opposite surface.
Claim 13
Dependent Claim
27 words
The method of claim 1 in which said etch stop includes etching with a material selected from the group consisting of boron, phosphorous, arsenic, antimony or aluminum.
Claim 14
Independent Claim
118 words
A method for forming from a semiconductor material a semiconductor transducer having a deflecting member supported by at least one corrugation, comprising the steps of: (a) masking a first surface on said semiconductor material in accordance with a first predetermined pattern; (b) masking a second surface on said semiconductor material in accordance with a second predetermined pattern; (c) etching said first surface in accordance with said predetermined pattern to provide a predetermined profile on said first surface; (d) removing said mask from said first surface; (e) providing an etch stop on said first surface in accordance with said predetermined profile; and (f) etching the unmasked portion of said second surface to form said corrugaton and said deflecting member.
Claim 15
Independent Claim
118 words
A method for forming from a semiconductor material a semiconductor transducer having a deflecting member supported by at least one corrugation, comprising the steps of: (a) masking a first surface on said semiconductor material in accordance with a first predetermined pattern; (b) masking a second surface on said semiconductor material in accordance with a second predetermined pattern; (c) etching said first surface in accordance with said predetermined pattern to provide a predetermined profile on said first surface; (d) removing said mask from said first surface; (e) providing an etch stop on said first surface in accordance with said predetermined profile; and (f) etching the unmasked portion of said second surface to form said corrugaton and said deflecting member.
Claim 16
Dependent Claim
29 words
The method of claim 13 further comprising the step of providing a mask on said second surface after said etch stop is provided to form a support member thereon.
Claim 17
Dependent Claim
15 words
The method of claim 13 wherein step (a) comprises oxidizing said oxidizing said semiconductor material.
Claim 18
Dependent Claim
17 words
The method of claim 13 wherein step (b) comprises etching said semiconductor material with a plasma etchant.
Claim 19
Dependent Claim
27 words
The method of claim 13 in which step (d) comprises diffusing an etch stop in said material to a depth of between 0.3 μm and 20 μm.
Claim 20
Dependent Claim
28 words
The method of claim 13 wherein step (e) comprises diffusing an etch stop in said material to a depth determined by the depth of a diffused semiconductor dopant.
Claim 21
Dependent Claim
35 words
The method of claim 13 wherein step (e) comprises the deposition of a thin film material conforming to said predetermined profile, said thin film material being unreactive with said second surface etching of step (f).
Claim 22
Dependent Claim
33 words
The method of claim 19 wherein said thin film material is selected from the group consisting of sputtered metal film, evaporated metal film, plated metal film, vapor deposited dielectric film, and polymer coating.
Claim 23
Dependent Claim
32 words
The method of claim 13 wherein said (e) comprises forming said deflecting member and said corrugations from the group consisting of sputtered metal, evaporated metal, plated metal, vapor deposited dielectric, and polymers.
Claim 24
Dependent Claim
15 words
The method of claim 13 in which step (f) comprises anisotropically etching said second surface.
Claim 25
Dependent Claim
14 words
The method of claim 13 wherein step (f) comprises isotropically etching said second surface.
Claim 26
Dependent Claim
12 words
The method of claim 13 in which said etch stop includes boron.
Claim 27
Independent Claim
98 words
A method for forming a semiconductor structure having a deflector member supported by one or more corrugations, comprisng the steps of: (a) etching a first surface of a semiconductor material in accordance with one or more predetermined patterns to provide a predetermined profile on said first surface; (b) providing one or more etch stop features on said first surface in accordance with said predetermined profile and in accordance with one or more predetermined patterns; and (c) etching a second surface of said semiconductor material in accordance with another predetermined pattern to form said corrugations and said deflecting member.
Claim 28
Independent Claim
98 words
A method for forming a semiconductor structure having a deflector member supported by one or more corrugations, comprisng the steps of: (a) etching a first surface of a semiconductor material in accordance with one or more predetermined patterns to provide a predetermined profile on said first surface; (b) providing one or more etch stop features on said first surface in accordance with said predetermined profile and in accordance with one or more predetermined patterns; and (c) etching a second surface of said semiconductor material in accordance with another predetermined pattern to form said corrugations and said deflecting member.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-26 | 1995-11-25 | 1996-05-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-26 | 1999-11-25 | 2000-05-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-26 | 2003-11-25 | 2004-05-26 | $7700.00 | Window Closed / Lapsed |