Abstract Two methods for wet etch removing an etch stop layer without leaving an undesired undercut are disclosed. In the first method, a reactive ion etch is stopped on an etch stop layer. The exposed etch stop is wet etch removed, leaving an undesirable undercut. The undercut is filled by chemical vapor deposition of a fill material. The filler is then etched to leave a smooth aperture without undercuts. This last etch may be a sputter etch followed by a plasma etch. In the second method, a reactive ion etch is stopped on an etch stop layer as in the first method. Sacrificial sidewalls are then formed within the aperture. The exposed etch stop layer is then removed by wet etching, the positioning of the sidewalls serving to prevent undercutting of the etch stop layer. Finally, the sacrificial sidewalls are etched.
A method for the elimination of contact hole etch stop undercut in the manufacture of a semiconductor structure comprising the steps of: anisotropically etching an insulator layer to an etch stop layer formed on a substrate; wet etching said stop layer forming an undercut between said insulator layer and said substrate; chemical vapor depositing a conforming insulating film over said semiconductor structure and filling said undercut; sputter etching said insulating film to form a splash back within an etched hole in said insulator layer; and non-directional plasma etching said insulating film after said sputter etching.
Claim 2
Independent Claim
95 words
A method for the elimination of contact hole etch stop undercut in the manufacture of a semiconductor structure comprising the steps of: anisotropically etching an insulator layer to an etch stop layer formed on a substrate; wet etching said stop layer forming an undercut between said insulator layer and said substrate; chemical vapor depositing a conforming insulating film over said semiconductor structure and filling said undercut; sputter etching said insulating film to form a splash back within an etched hole in said insulator layer; and non-directional plasma etching said insulating film after said sputter etching.
Claim 3
Dependent Claim
17 words
The method recited in claim 1 wherein said etch stop layer is Al 2 O 3 .
Claim 4
Dependent Claim
24 words
The method recited in claim 1 wherein said insulating film is selected from the group consisting of TeOS and Si 3 N 4 .