US5122483A
Expired / Lapsed
US
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Method of forming a highly insulative thin films
Assignee: Nissin Electric Co Ltd
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Filing: 1990-12-27
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Granted: 1992-06-16
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Expires: 2010-12-27
Abstract
Abstract A method of forming a highly insulative silicon oxide thin film including the steps of providing a substrate, depositing silicon on the substrate, and injecting an ion beam of oxygen or a mixed gas consisting of oxygen and an inert gas simultaneously or alternately with the depositing of the silicon. Silicon oxide may be deposited on the substrate in combination with the injection of ions of an inert gas. Other metals made be deposited along with the injection of oxygen or nitrogen cations.
Inventors
- 👤 Shigeki Sakai
- 👤 Kiyoshi Ogata
- 👤 Tsukasa Hayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 07:07
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
76 words
A method of forming a highly insulative silicon oxide thin film comprising the steps of: providing a substrate; depositing silicon on said substrate while said substrate is maintained at room temperature; and injecting an ion beam of oxygen or a mixed gas consisting essentially of oxygen and an inert gas simultaneously with the deposition of the silicon on said substrate, said ion beam having an energy approximately in the range of 1 KeV to 10 KeV.
Claim 2
Independent Claim
76 words
A method of forming a highly insulative silicon oxide thin film comprising the steps of: providing a substrate; depositing silicon on said substrate while said substrate is maintained at room temperature; and injecting an ion beam of oxygen or a mixed gas consisting essentially of oxygen and an inert gas simultaneously with the deposition of the silicon on said substrate, said ion beam having an energy approximately in the range of 1 KeV to 10 KeV.
Claim 3
Independent Claim
68 words
A method of forming a highly insulative silicon oxide thin film comprising the steps of: providing a substrate; depositing silicon oxide on said substrate while said substrate is maintained at room temperature; and injecting an ion beam of an inert gas simultaneously with the deposition of the silicon oxide on said substrate, said ion beam having an energy approximately in the range of 1 KeV to 10 KeV.
Claim 4
Independent Claim
68 words
A method of forming a highly insulative silicon oxide thin film comprising the steps of: providing a substrate; depositing silicon oxide on said substrate while said substrate is maintained at room temperature; and injecting an ion beam of an inert gas simultaneously with the deposition of the silicon oxide on said substrate, said ion beam having an energy approximately in the range of 1 KeV to 10 KeV.
Claim 5
Dependent Claim
18 words
The method according to claim 2, wherein the step of injecting includes injecting an ion beam of argon.
Claim 6
Dependent Claim
29 words
The method according to claim 2, wherein the step of injecting includes injecting an ion beam of one selected from the group consisting of helium, neon, xenon, and krypton.
Claim 7
Independent Claim
76 words
A method of forming a highly insulative silicon oxide thin film comprising the steps of: providing a substrate; depositing silicon on said substrate while said substrate is maintained at room temperature; and injecting an ion beam of oxygen or a mixed gas consisting essentially of oxygen and an inert gas alternately with the deposition of the silicon on said substrate, said ion beam having an energy approximately in the range of 1 KeV to 10 KeV.
Claim 8
Independent Claim
76 words
A method of forming a highly insulative silicon oxide thin film comprising the steps of: providing a substrate; depositing silicon on said substrate while said substrate is maintained at room temperature; and injecting an ion beam of oxygen or a mixed gas consisting essentially of oxygen and an inert gas alternately with the deposition of the silicon on said substrate, said ion beam having an energy approximately in the range of 1 KeV to 10 KeV.
Claim 9
Independent Claim
68 words
A method of forming a highly insulative silicon oxide thin film comprising the steps of: providing a substrate; depositing silicon oxide on said substrate while said substrate is maintained at room temperature; and injecting an ion beam of an inert gas alternately with the deposition of the silicon oxide on said substrate, said ion beam having an energy approximately in the range of 1 KeV to 10 KeV.
Claim 10
Independent Claim
68 words
A method of forming a highly insulative silicon oxide thin film comprising the steps of: providing a substrate; depositing silicon oxide on said substrate while said substrate is maintained at room temperature; and injecting an ion beam of an inert gas alternately with the deposition of the silicon oxide on said substrate, said ion beam having an energy approximately in the range of 1 KeV to 10 KeV.
Claim 11
Dependent Claim
17 words
The method according to claim 6, wherein the step of injecting includes an ion beam of argon.
Claim 12
Dependent Claim
28 words
The method according to claim 6, wherein the step of injecting includes an ion beam of one selected from the group consisting of helium, neon, xenon, and krypton.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-16 | 1995-12-16 | 1996-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-16 | 1999-12-16 | 2000-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-16 | 2003-12-16 | 2004-06-16 | $7700.00 | Window Closed / Lapsed |