Abstract A process and structure for resolving the divergent etching requirements of a relatively thick base oxide (62) and a relatively thin gate oxide (64) in a BiCMOS integrated circuit. The necessity of etching base oxide (62) is eliminated by extending nitride mask (58) over the extrinsic base region (86) so that the relatively thick base oxide (62) only covers intrinsic base region (60) and tab region (61). Base oxide (62) at tab region (61) is partially etched in the course of forming sidewall oxide filaments (78), resulting in the residual tab oxide (62'). An extrinsic base implant is performed in extrinsic base region (86) and tab region (61), with the presence of residual tab oxide (62') affecting the profile of the implant so that it is stepped. The resulting structure, after an anneal, is extrinsic base (87'), an intrinsic base (63) (formed prior to the extrinsic base implant), and an overlap region (88') common to both. Extrinsic base ( 87') has a relatively greater dopant concentration compared to intrinsic base region (63). The dopant concentration in overlap region (88') is substantially that of extrinsic base (87'). The overlap region (88') insures adequate conductivity link-up between the extrinsic base (87') and the intrinsic base (63). Since no thick base oxide (62) is ever formed in extrinsic base region (86), no undesirable heavy etch is required in extrinsic base region (86), such a heavy etch being undesirable because of the necessity of an extra processing step for masking areas containing the relatively thinner oxide (64). Thus, a processing step is eliminated and yet adequate conductivity link-up between extrinsic base (87') and intrinsic base (63) is achieved via overlap region (88').
A method for fabricating a BiCMOS integrated circuit in a surface of a semiconductor body including base region and a gate region, the method comprising: (a) providing a base oxide in the base region, the base oxide presenting a thickness; (b) providing a gate oxide in selected portions of the surface of the semiconductor body, including the gate region, the gate oxide presenting a predetermined thickness less than the thickness of the base oxide; (c) etching both the base oxide and selected portions of the gate oxide not in the gate region, such that substantially the entire thickness of the selected portions of the gate oxide is removed from the semiconductor body and a partial thickness of the base oxide remains on the semiconductor body, whereby the thicker base oxide provides reduced emitter-base capacitance, while the reduced portion of the base oxide allows for adequate extrinsic-intrinsic base overlap while requiring a lesser etch for complete etch of the base oxide thickness.
Claim 2
Independent Claim
161 words
A method for fabricating a BiCMOS integrated circuit in a surface of a semiconductor body including base region and a gate region, the method comprising: (a) providing a base oxide in the base region, the base oxide presenting a thickness; (b) providing a gate oxide in selected portions of the surface of the semiconductor body, including the gate region, the gate oxide presenting a predetermined thickness less than the thickness of the base oxide; (c) etching both the base oxide and selected portions of the gate oxide not in the gate region, such that substantially the entire thickness of the selected portions of the gate oxide is removed from the semiconductor body and a partial thickness of the base oxide remains on the semiconductor body, whereby the thicker base oxide provides reduced emitter-base capacitance, while the reduced portion of the base oxide allows for adequate extrinsic-intrinsic base overlap while requiring a lesser etch for complete etch of the base oxide thickness.
Claim 3
Dependent Claim
38 words
The method of claim 1, wherein the gate oxide of step (b) is grown at two laterally spaced locations comprising a p well formed in the semiconductor body and an n well form formed in the semiconductor body.
Claim 4
Dependent Claim
23 words
The method of claim 1, wherein the base oxide of step (a) is grown to a thickness of from 60 to 150 nm.
Claim 5
Dependent Claim
21 words
The method of claim 1, wherein the gate oxide of step (b) is grown to a thickness of about 20 nm.