US5134093A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating a semiconductor device including a protective layer
Assignee: Panasonic Holdings Corp
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Filing: 1991-01-17
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Granted: 1992-07-28
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Expires: 2011-01-17
Abstract
Abstract A method of fabricating a semiconductor device is disclosed, which can prevent disconnection failures due to corrosion of aluminum-base alloy lines in the semiconductor device. First, an aluminum-base alloy film containing at least one kind of alloying element other than aluminum is formed on an insulating film which covers a semiconductor substrate. Before the surface of the aluminum-base alloy film is cleaned with fuming nitric acid, the surface treatment of the aluminum-base alloy film is performed using a plasma of an oxygen-base gas, to cover fully the surface of the aluminum-base alloy film with passivation film. Next, the given portions of the aluminum-base alloy film are selectively etched to form a line pattern. The surface treatment of the line pattern is performed using a plasma of an oxygen-base gas to cover fully the sides of the line pattern with passive film, before the surface of the line pattern is cleaned with fuming nitric acid.
Inventors
- 👤 Teruhito Onishi
- 👤 Tetsuya Ueda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:19
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10P; H10P95/00; H10W20/40; H10W20/45; H10W20/48; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/015
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
91 words
A method of fabricating a semiconductor device, comprising the steps of: forming, on an insulating film covering a substrate, an aluminum-base film comprising an aluminum-base alloy containing at least one kind of alloying element other than aluminum; forming a protective layer on a surface of said aluminum-base film by treating said surface using a plasma of an oxygen-base gas; cleaning said treated surface of said aluminum-base film with fuming nitric acid; rinsing said cleaned surface of said aluminum-base film with pure water; and etching selectively given portions of said aluminum-base film.
Claim 2
Independent Claim
91 words
A method of fabricating a semiconductor device, comprising the steps of: forming, on an insulating film covering a substrate, an aluminum-base film comprising an aluminum-base alloy containing at least one kind of alloying element other than aluminum; forming a protective layer on a surface of said aluminum-base film by treating said surface using a plasma of an oxygen-base gas; cleaning said treated surface of said aluminum-base film with fuming nitric acid; rinsing said cleaned surface of said aluminum-base film with pure water; and etching selectively given portions of said aluminum-base film.
Claim 3
Dependent Claim
13 words
A method according to claim 1, wherein said oxygen-base gas contains nitrogen atoms.
Claim 4
Dependent Claim
25 words
A method according to claim 1, wherein said treating step is performed at a substrate temperature within a range of 100° C. to 300° C.
Claim 5
Independent Claim
88 words
A method of fabricating a semiconductor device, comprising the steps of: forming on an insulating film covering a substrate an aluminum-base line pattern comprising an aluminum-base alloy containing at least one kind of alloying element other than aluminum; forming a protective layer on a surface of said aluminum-base line pattern by treating said patterened surface using a plasma of an oxygen-base gas; cleaning said treated surface of said aluminum-base line pattern with fuming nitric acid; and rinsing said cleaned surface of said aluminum-base line pattern with pure water.
Claim 6
Independent Claim
88 words
A method of fabricating a semiconductor device, comprising the steps of: forming on an insulating film covering a substrate an aluminum-base line pattern comprising an aluminum-base alloy containing at least one kind of alloying element other than aluminum; forming a protective layer on a surface of said aluminum-base line pattern by treating said patterened surface using a plasma of an oxygen-base gas; cleaning said treated surface of said aluminum-base line pattern with fuming nitric acid; and rinsing said cleaned surface of said aluminum-base line pattern with pure water.
Claim 7
Dependent Claim
13 words
A method according to claim 4, wherein said oxygen-base gas contains nitrogen atoms.
Claim 8
Dependent Claim
25 words
A method according to claim 4, wherein said treating step is performed at a substrate temperature within a range of 100° C. to 300° C.
Claim 9
Dependent Claim
23 words
A method according to claim 4, wherein a series of said treating step, said cleaning step and said rinsing step is subsequently repeated.
Claim 10
Dependent Claim
13 words
A method according to claim 7, wherein said oxygen-base gas contains nitrogen atoms.
Claim 11
Dependent Claim
25 words
A method according to claim 7, wherein said treating step is performed at a substrate temperature within a range of 100° C. to 300° C.
References Cited (Backward Citations)
US3585461A
Cited
US4089709A
Cited
US4351696A
Cited
US4412885A
Cited
US4561168A
Cited
US4592800A
Cited
US4997746A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-07-28 | 1996-01-27 | 1996-07-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-07-28 | 2000-01-27 | 2000-07-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-07-28 | 2004-01-27 | 2004-07-28 | $7700.00 | Window Closed / Lapsed |