US5135889A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a shielding structure for decoupling signal traces in a semiconductor
Assignee: Micron Technology Inc
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Filing: 1991-12-09
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Granted: 1992-08-04
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Expires: 2011-12-09
Abstract
Abstract A method for forming a semiconductor structure including parallel spaced conducting traces each physically separated by a grounding trace. The grounding traces are located in between the conducting traces to provide a shielding structure to diminish capacitive coupling between the conducting traces. At the same time, each conducting traces is capacitively coupled to each adjacent pair of grounding traces and the grounding traces are connected to a ground such as a grounded substrate. The grounding traces are formed on a different layer of the semiconductor structure from the conducting traces such that a layout area of the conducting traces is not affected.
Inventors
- 👤 David H. Allen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 07:16
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/423; Y; Y10; Y10S; Y10S438/00; Y10S438/901
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
101 words
A semiconductor fabrication method for forming a shielding structure for conducting traces, comprising: forming a first insulating layer on a substrate; depositing a grounding layer of a conductive material on the insulating layer; patterning and etching the grounding layer to form grounding traces; connecting the grounding traces to a ground source; depositing a second insulating layer on the grounding traces; depositing a conducting layer of a conductive material on the second insulating layer; and patterning and etching the conducting layer to form conducting traces with a grounding trace located between each adjacent pair of conducting traces but on a different layer.
Claim 2
Dependent Claim
101 words
A semiconductor fabrication method for forming a shielding structure for conducting traces, comprising: forming a first insulating layer on a substrate; depositing a grounding layer of a conductive material on the insulating layer; patterning and etching the grounding layer to form grounding traces; connecting the grounding traces to a ground source; depositing a second insulating layer on the grounding traces; depositing a conducting layer of a conductive material on the second insulating layer; and patterning and etching the conducting layer to form conducting traces with a grounding trace located between each adjacent pair of conducting traces but on a different layer.
Claim 3
Dependent Claim
16 words
The method as claimed in claim 1 and wherein: the grounding traces are formed of polysilicon.
Claim 4
Dependent Claim
16 words
The method as claimed in claim 1 and wherein: the grounding traces are formed of metal.
Claim 5
Dependent Claim
20 words
The method as claimed in claim 1 and wherein: the grounding traces are connected to the substrate that is grounded.
Claim 6
Dependent Claim
26 words
The method as claimed in claim 1 and wherein: the grounding traces are connected to a power supply that acts as an AC short to ground.
Claim 7
Dependent Claim
37 words
The method as claimed in claim 1 and wherein: the second insulating layer is conformably deposited over the grounding traces and valleys are formed between the grounding traces and used as a conduit for the conducting traces.
Claim 8
Dependent Claim
16 words
The method as claimed in claim 1 and wherein: the conducting layer is formed of aluminum.
Claim 9
Dependent Claim
165 words
A semiconductor manufacturing method for forming a semiconductor shielding structure having conducting traces on a grounded substrate, comprising: depositing an insulating material on the substrate to form a first insulating layer; depositing a conducting material over the first insulating layer to form a grounding layer; patterning and etching the grounding layer to form grounding traces; connecting the grounding traces to the substrate and grounding the substrate; conformably depositing an insulating material over the grounding traces such that the grounding traces are embedded in insulating material; depositing a conducting material over the insulating material to form a conducting layer; and patterning and etching the conducting layer to form conducting traces with each adjacent pair of conducting traces having a grounding trace therebetween but on a subjacent layer; whereby each conducting trace is capacitively coupled to the grounded substrate and to a pair of grounding traces for coupling to ground but is physically shielded from adjacent conducting traces to decrease a capacitive coupling between adjacent conducting traces.
Claim 10
Dependent Claim
165 words
A semiconductor manufacturing method for forming a semiconductor shielding structure having conducting traces on a grounded substrate, comprising: depositing an insulating material on the substrate to form a first insulating layer; depositing a conducting material over the first insulating layer to form a grounding layer; patterning and etching the grounding layer to form grounding traces; connecting the grounding traces to the substrate and grounding the substrate; conformably depositing an insulating material over the grounding traces such that the grounding traces are embedded in insulating material; depositing a conducting material over the insulating material to form a conducting layer; and patterning and etching the conducting layer to form conducting traces with each adjacent pair of conducting traces having a grounding trace therebetween but on a subjacent layer; whereby each conducting trace is capacitively coupled to the grounded substrate and to a pair of grounding traces for coupling to ground but is physically shielded from adjacent conducting traces to decrease a capacitive coupling between adjacent conducting traces.
Claim 11
Dependent Claim
18 words
The method as claimed in claim 8 and wherein: the conducting material for the grounding layer is polysilicon.
Claim 12
Dependent Claim
18 words
The method as claimed in claim 8 and wherein: the conducting material for the grounding layer is metal.
Claim 13
Dependent Claim
27 words
The method as claimed in claim 8 and wherein: conformed deposition of the insulating material over the grounding traces forms a natural conduit for the conducting traces.
Claim 14
Dependent Claim
30 words
The method as claimed in claim 8 and wherein: the grounding traces are connected to a power supply that acts as an AC short to ground for the conducting traces.
Claim 15
Dependent Claim
53 words
The method as claimed in claim 8 and wherein: a distance between a conducting trace and a grounding trace is less than a distance between a conducting trace and the ground such that the conducting traces are capacitively coupled to two adjacent grounding traces and a capacitive coupling to ground is approximately doubled.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-04 | 1996-02-03 | 1996-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-04 | 2000-02-03 | 2000-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-04 | 2004-02-03 | 2004-08-04 | $7700.00 | Window Closed / Lapsed |