US5139922A
Expired / Lapsed
US
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Method of making resist pattern
Assignee: Tosoh Corp
•
Filing: 1990-10-25
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Granted: 1992-08-18
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Expires: 2010-10-25
Abstract
Abstract A thin film of conductive high molecular compound is formed on a substrate such as Si followed by a heat treatment, and thereafter an electron beam exposure and subsequent development are made, to form pattern of the thin film of conductive high molecular compound; this method can eliminate forming of metal film to prevent the electron charge, can prevent charging of resist in electron-beam exposure or further prevent proximity effect when combined with deep ultraviolet light exposure.
Inventors
- 👤 Hisashi Watanabe
- 👤 Yoshihiro Todokoro
- 👤 Masazumi Hasegawa
- 👤 Mitsutoshi Fukuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 02:50
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70425; G03F7/7045; G03F7/004; G03F7/09; G03F7/094; Y; Y10; Y10S; Y10S430/00; Y10S430/143
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
103 words
A method for making a resist pattern comprising the steps of: forming on a substrate a multi-layer resist film having at least one thin film of a conductive high molecular compound which is substantially a salt consisting of styrene sulfonate anion and a radical having a positive charge; and exposing said multi-layer resist film to an electron-beam; wherein said thin film is made of ammonium poly (p-styrene sulfonate) and is formed by a spin coating method using a solution prepared by dissolving ammonium poly (p-styrene sulfonate) in water or methyl alcohol or a mixture of water and methyl alcohol followed by heat treatment.
Claim 2
Independent Claim
103 words
A method for making a resist pattern comprising the steps of: forming on a substrate a multi-layer resist film having at least one thin film of a conductive high molecular compound which is substantially a salt consisting of styrene sulfonate anion and a radical having a positive charge; and exposing said multi-layer resist film to an electron-beam; wherein said thin film is made of ammonium poly (p-styrene sulfonate) and is formed by a spin coating method using a solution prepared by dissolving ammonium poly (p-styrene sulfonate) in water or methyl alcohol or a mixture of water and methyl alcohol followed by heat treatment.
Claim 3
Independent Claim
94 words
A method for making a resist pattern comprising the steps of: forming on a substrate a multi-layer resist film having at least one thin film of a conductive high molecular compound which is substantially of ammonium poly (p-styrene sulfonate); and exposing said multi-layer resist film to an electron-beam; wherein said thin film is made of ammonium poly (p-styrene sulfonate) and is formed by a spin coating method using a solution prepared by dissolving ammonium poly (p-styrene sulfonate) in water or methyl alcohol or a mixture of water and methyl alcohol, followed by heat treatment.
Claim 4
Independent Claim
94 words
A method for making a resist pattern comprising the steps of: forming on a substrate a multi-layer resist film having at least one thin film of a conductive high molecular compound which is substantially of ammonium poly (p-styrene sulfonate); and exposing said multi-layer resist film to an electron-beam; wherein said thin film is made of ammonium poly (p-styrene sulfonate) and is formed by a spin coating method using a solution prepared by dissolving ammonium poly (p-styrene sulfonate) in water or methyl alcohol or a mixture of water and methyl alcohol, followed by heat treatment.
Claim 5
Dependent Claim
29 words
Method for making a resist pattern in accordance with claim 1 or 2, wherein the concentration of ammonium poly (p-styrene sulfonate) in said solution is below 30 wt %.
Claim 6
Dependent Claim
113 words
Method for making resist pattern comprising the steps of: forming on a substrate, a film of positive type electron-beam resist, forming further thereon a thin film of ammonium poly (p-styrene sulfonate), exposing accumulated films of said positive type electron-beam resist film and ammonium poly (p-styrene sulfonate) film to electron beam of a predetermined pattern, developing said exposed accumulated films by water or Novorak type photoresist developer to make a pattern of said ammonium poly (p-styrene sulfonate) film, exposing the whole surface of said accumulated films to deep-ultraviolet rays, and subsequently developing the accumulated films by a developer for positive-type electron-beam resist, to make a pattern of said film of positive type electron-beam resist.
Claim 7
Dependent Claim
113 words
Method for making resist pattern comprising the steps of: forming on a substrate, a film of positive type electron-beam resist, forming further thereon a thin film of ammonium poly (p-styrene sulfonate), exposing accumulated films of said positive type electron-beam resist film and ammonium poly (p-styrene sulfonate) film to electron beam of a predetermined pattern, developing said exposed accumulated films by water or Novorak type photoresist developer to make a pattern of said ammonium poly (p-styrene sulfonate) film, exposing the whole surface of said accumulated films to deep-ultraviolet rays, and subsequently developing the accumulated films by a developer for positive-type electron-beam resist, to make a pattern of said film of positive type electron-beam resist.
Claim 8
Dependent Claim
64 words
Method for forming a resist pattern comprising the steps of: forming on a substrate, a thin film of conductive high molecular compound which is substantially of ammonium poly (p-styrene sulfonate), heat treating said thin film, exposing said heat-treated thin film to an electron beam, and developing said electron-exposed thin film, thereby producing a resist pattern of said thin film of conductive high molecular compound.
Claim 9
Dependent Claim
64 words
Method for forming a resist pattern comprising the steps of: forming on a substrate, a thin film of conductive high molecular compound which is substantially of ammonium poly (p-styrene sulfonate), heat treating said thin film, exposing said heat-treated thin film to an electron beam, and developing said electron-exposed thin film, thereby producing a resist pattern of said thin film of conductive high molecular compound.
Claim 10
Dependent Claim
55 words
Method for making a resist pattern in accordance with claim 4 or 5, wherein said thin film of ammonium poly (p-styrene sulfonate) is formed by a spin coating method using a solution prepared by dissolving ammonium poly (p-styrene sulfonate) in water or methyl alcohol or mixture of water and methyl alcohol, followed by heat treatment.
Claim 11
Dependent Claim
26 words
Method for making a resist pattern in accordance with claim 6, wherein the concentration of ammonium poly (p-styrene sulfonate) in said solution is below 30 wt%.
Claim 12
Independent Claim
117 words
A method for making a resist pattern comprising the steps of: forming on a substrate a multi-layer resist film having at least one thin film of a conductive high molecular compound which is substantially a salt consisting of a styrene sulfonate anion and a radical having a positive charge; wherein said multi-layer resist film is formed by the steps of: forming said one thin film of conductive high molecular compound on said substrate; forming a Si-containing resist film on said thin film of conductive high molecular compound; exposing said multi-layer resist film to an electron beam to form a desired pattern; and thereafter selectively removing, the desired pattern made by said exposing to form a final pattern.
Claim 13
Independent Claim
117 words
A method for making a resist pattern comprising the steps of: forming on a substrate a multi-layer resist film having at least one thin film of a conductive high molecular compound which is substantially a salt consisting of a styrene sulfonate anion and a radical having a positive charge; wherein said multi-layer resist film is formed by the steps of: forming said one thin film of conductive high molecular compound on said substrate; forming a Si-containing resist film on said thin film of conductive high molecular compound; exposing said multi-layer resist film to an electron beam to form a desired pattern; and thereafter selectively removing, the desired pattern made by said exposing to form a final pattern.
Claim 14
Independent Claim
107 words
A method for making a resist pattern comprising the steps of: forming on a substrate a multi-layer resist film having at least one thin film of a conductive high molecular compound which is substantially of ammonium poly (p-styrene sulfonate); wherein said multi-layer resist film is formed by the steps of: forming said one thin film of conductive high molecular compound on said substrate; forming a Si-containing resist film on said thin film of conductive high molecular compound; exposing said multi-layer resist film to an electron beam to form a desired pattern; and thereafter selectively removing, the desired pattern made by said exposing to form a final pattern.
Claim 15
Independent Claim
107 words
A method for making a resist pattern comprising the steps of: forming on a substrate a multi-layer resist film having at least one thin film of a conductive high molecular compound which is substantially of ammonium poly (p-styrene sulfonate); wherein said multi-layer resist film is formed by the steps of: forming said one thin film of conductive high molecular compound on said substrate; forming a Si-containing resist film on said thin film of conductive high molecular compound; exposing said multi-layer resist film to an electron beam to form a desired pattern; and thereafter selectively removing, the desired pattern made by said exposing to form a final pattern.
Claim 16
Independent Claim
121 words
A method for making a resist pattern comprising the steps of: forming on a substrate a multi-layer resist film having at least one thin film of a conductive high molecular compound which is substantially a salt consisting of styrene sulfonate anion and a radical having a positive charge; wherein said multi-layer resist film is formed by the steps of: forming said one thin film of conductive high molecular compound on said substrate; forming a spin-on-glass film on said one thin film; forming an electron-beam resist film on said spin-on-glass film; exposing said a multi-layer resist film to an electron beam; and thereafter selectively removing from at least said electron beam resist film to produce a desired pattern made by said exposing.
Claim 17
Independent Claim
121 words
A method for making a resist pattern comprising the steps of: forming on a substrate a multi-layer resist film having at least one thin film of a conductive high molecular compound which is substantially a salt consisting of styrene sulfonate anion and a radical having a positive charge; wherein said multi-layer resist film is formed by the steps of: forming said one thin film of conductive high molecular compound on said substrate; forming a spin-on-glass film on said one thin film; forming an electron-beam resist film on said spin-on-glass film; exposing said a multi-layer resist film to an electron beam; and thereafter selectively removing from at least said electron beam resist film to produce a desired pattern made by said exposing.
Claim 18
Independent Claim
111 words
A method for making a resist pattern comprising the steps of: forming on a substrate a multi-layer resist film having at least one thin film of a conductive high molecular compound which is substantially of ammonium poly (p-styrene sulfonate); wherein said multi-layer resist film is formed by the steps of: forming said one thin film of conductive high molecular compound on said substrate; forming a spin-on-glass film on said one thin film; forming an electron-beam resist film on said spin-on-glass film; exposing said multi-layer resist film to an electron beam; and thereafter selectively removing from at least said electron beam resist film to produce a desired pattern made by said exposing.
Claim 19
Independent Claim
111 words
A method for making a resist pattern comprising the steps of: forming on a substrate a multi-layer resist film having at least one thin film of a conductive high molecular compound which is substantially of ammonium poly (p-styrene sulfonate); wherein said multi-layer resist film is formed by the steps of: forming said one thin film of conductive high molecular compound on said substrate; forming a spin-on-glass film on said one thin film; forming an electron-beam resist film on said spin-on-glass film; exposing said multi-layer resist film to an electron beam; and thereafter selectively removing from at least said electron beam resist film to produce a desired pattern made by said exposing.
Claim 20
Independent Claim
132 words
A method for making a resist pattern comprising the steps of: forming on a substrate a multi-layer resist film having at least one thin film of a conductive high molecular compound which is substantially a salt consisting of styrene sulfonate anion and a radical having a positive charge; wherein said multi-layer resist film is formed by the steps of: forming an electron-beam resist film on said substrate; forming said one thin film of conductive high molecular compound on said electron-beam resist film; heat treating the resultant multi-layer resist film; exposing said resultant multi-layer resist film to said electron beam; and thereafter performing flood removal on said thin film of conductive high molecular compound and subsequently performing selective removal on said electron beam resist to produce a desired pattern made by said exposing.
Claim 21
Independent Claim
132 words
A method for making a resist pattern comprising the steps of: forming on a substrate a multi-layer resist film having at least one thin film of a conductive high molecular compound which is substantially a salt consisting of styrene sulfonate anion and a radical having a positive charge; wherein said multi-layer resist film is formed by the steps of: forming an electron-beam resist film on said substrate; forming said one thin film of conductive high molecular compound on said electron-beam resist film; heat treating the resultant multi-layer resist film; exposing said resultant multi-layer resist film to said electron beam; and thereafter performing flood removal on said thin film of conductive high molecular compound and subsequently performing selective removal on said electron beam resist to produce a desired pattern made by said exposing.
Claim 22
Independent Claim
123 words
A method for making a resist pattern comprising the steps of: forming on a substrate a multi-layer resist film having at least one thin film of a conductive high molecular compound which is substantially of ammonium poly (p-styrene sulfonate); wherein said multi-layer resist film is formed by the steps of: forming an electron-beam resist film on said substrate; forming said one thin film of conductive high molecular compound on said electron-beam resist film; heat treating the resultant multi-layer resist film; exposing said resultant multi-layer resist film to said electron beam; and thereafter performing flood removal on said thin film of conductive high molecular compound and subsequently performing selective removal on said electron beam resist to produce a desired pattern made by said exposing.
Claim 23
Independent Claim
123 words
A method for making a resist pattern comprising the steps of: forming on a substrate a multi-layer resist film having at least one thin film of a conductive high molecular compound which is substantially of ammonium poly (p-styrene sulfonate); wherein said multi-layer resist film is formed by the steps of: forming an electron-beam resist film on said substrate; forming said one thin film of conductive high molecular compound on said electron-beam resist film; heat treating the resultant multi-layer resist film; exposing said resultant multi-layer resist film to said electron beam; and thereafter performing flood removal on said thin film of conductive high molecular compound and subsequently performing selective removal on said electron beam resist to produce a desired pattern made by said exposing.
Claim 24
Dependent Claim
72 words
Method of forming a resist pattern comprising the steps of: forming on a substrate, a thin film of conductive high molecular compound which is substantially a salt consisting of styrene sulfonate anion and radical having a positive charge, heat treating said thin film, exposing said heat-treated thin film to an electron beam, and developing said electron-exposed thin film, thereby producing a resist pattern of said thin film of conductive high molecular compound.
Claim 25
Dependent Claim
72 words
Method of forming a resist pattern comprising the steps of: forming on a substrate, a thin film of conductive high molecular compound which is substantially a salt consisting of styrene sulfonate anion and radical having a positive charge, heat treating said thin film, exposing said heat-treated thin film to an electron beam, and developing said electron-exposed thin film, thereby producing a resist pattern of said thin film of conductive high molecular compound.
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