Writable analog reference voltage storage device

Claim 2

A circuit disposed on a semiconductor substrate for generating an analog voltage signal in a semiconductor integrated circuit disposed on said semiconductor substrate, including: an analog floating gate storage device disposed on said semiconductor substrate, said analog floating gate storage device including a floating gate; a non-avalanche hot electron injection means associated with said analog floating gate device for injecting electrons onto said floating gate; means associated with said analog floating gate device for removing electrons from said floating gate; an analog output voltage bus; and a high input impedance follower amplifier having an input connected to said floating gate and an output connected to said analog output voltage bus.

Claim 3

The circuit of claim 1 wherein said means for removing electrons from said floating gate includes means for illuminating said floating gate with ultraviolet radiation.

Claim 4

The circuit of claim 1 wherein said means for removing electrons from said floating gate comprises means for tunneling electrons from said floating gate.

Claim 5

The circuit of claim 1 wherein said analog output voltage bus has a capacitance associated therewith, said capacitance having a value greater than the inherent capacitance associated with said bus and further including means for turning off the output of said follower amplifier.

Claim 6

The circuit of claim 1, further including a bias circuit comprising: a first capacitor having a first plate and a second plate; a second capacitor having a first plate and a second plate; a diode-connected MOS transistor of a first conductivity type having a source connected to a first voltage rail and to said first plate of said first capacitor, and a gate and drain connected to said second plate of said first capacitor; an MOS transistor of said first conductivity type having a gate connected to said analog output voltage bus and a source connected to the drain of said diode-connected MOS transistor of said first conductivity type to form a first bias output node; and a diode-connected MOS transistor of a second conductivity type opposite to said first conductivity type having a source connected to a second voltage rail and to said first plate of said second capacitor, and a gate and drain connected to said second plate of said second capacitor and to the drain of said MOS transistor of said first conductivity type to form a second bias output note.

Claim 7

The circuit of claim 4, further including: a monitor/dynamic load line; an analog pass gate connected between said analog output voltage bus and said monitor/dynamic load line; and means for providing a strobe signal to said analog pass gate.

Claim 8

A circuit disposed on a semiconductor substrate for generating N analog voltage signals in a semiconductor integrated circuit disposed on said semiconductor substrate, including: N analog floating gate storage devices disposed on said semiconductor substrate, each of said analog floating gate storage devices including a floating gate; a non-avalanche hot electron injection means associated with each of said analog floating gate device for injecting electrons onto its floating gate; digital control means for selectively activating each electron injection means; means associated with each of said analog floating gate devices for removing electrons from its floating gate; an analog output voltage bus associated with each of said analog floating gate devices, each of said analog output voltage busses having a capacitance associated therewith; and a high input impedance follower amplifier associated with each of said analog floating gate devices, each of said follower amplifiers having an input connected to its floating gate and an output connected to its analog output voltage bus.

Claim 9

A circuit disposed on a semiconductor substrate for generating N analog voltage signals in a semiconductor integrated circuit disposed on said semiconductor substrate, including: N analog floating gate storage devices disposed on said semiconductor substrate, each of said analog floating gate storage devices including a floating gate; a non-avalanche hot electron injection means associated with each of said analog floating gate device for injecting electrons onto its floating gate; digital control means for selectively activating each electron injection means; means associated with each of said analog floating gate devices for removing electrons from its floating gate; an analog output voltage bus associated with each of said analog floating gate devices, each of said analog output voltage busses having a capacitance associated therewith; and a high input impedance follower amplifier associated with each of said analog floating gate devices, each of said follower amplifiers having an input connected to its floating gate and an output connected to its analog output voltage bus.

Claim 10

The circuit of claim 7 wherein said means for removing electrons from said floating gates includes means for illuminating said floating gates with ultraviolet radiation.

Claim 11

The circuit of claim 7 wherein said means for removing electrons from said floating gates comprises means for tunneling electrons from said floating gates.

Claim 12

The circuit of claim 7, further including: a monitor/dynamic load line; an analog pass gate connected between each one of said analog output voltage buses and said monitor/dynamic load line; and means for providing a separate strobe signal to each of said analog pass gates.

Claim 13

A circuit disposed on a semiconductor substrate for generating an analog voltage signal in a semiconductor integrated circuit disposed on said semiconductor substrate, including: an analog floating gate storage device disposed on said semiconductor substrate, said analog floating gate storage device including a floating gate connected to a stabilizing capacitor, and a non-avalanche hot electron injection device including a collector connected to a first voltage node, an emitter connected to a second voltage node and a base connected to a third voltage node and an insulated gate connected to said floating gate; means for removing electrons from said floating gate; an analog output voltage bus; and a high input impedance follower amplifier having an input connected to said floating gate and an output connected to said analog output voltage bus.

Claim 14

A circuit disposed on a semiconductor substrate for generating an analog voltage signal in a semiconductor integrated circuit disposed on said semiconductor substrate, including: an analog floating gate storage device disposed on said semiconductor substrate, said analog floating gate storage device including a floating gate connected to a stabilizing capacitor, and a non-avalanche hot electron injection device including a collector connected to a first voltage node, an emitter connected to a second voltage node and a base connected to a third voltage node and an insulated gate connected to said floating gate; means for removing electrons from said floating gate; an analog output voltage bus; and a high input impedance follower amplifier having an input connected to said floating gate and an output connected to said analog output voltage bus.

Claim 15

The circuit of claim 11 wherein said means for removing electrons from said floating gate includes means for illuminating said floating gate with ultraviolet radiation.

Claim 16

The circuit of claim 11 wherein said means for removing electrons from said floating gate comprises means for tunneling electrons from said floating gate.

Claim 17

The circuit of claim 11 wherein said analog output voltage bus has a capacitance associated therewith, said capacitance having a value greater than the inherent capacitance associated with said bus and further including means for turning off the output of said follower amplifier.

Claim 18

The circuit of claim 14, further including: a monitor/dynamic load line; an analog pass gate connected between said analog output voltage bus and said monitor/dynamic load line; and means for providing a strobe signal to said analog pass gate.

Claim 19

A circuit disposed on a semiconductor substrate for generating N analog voltage signals in a semiconductor integrated circuit disposed on said semiconductor substrate, including: N analog floating ate storage devices disposed on said semiconductor substrate, each of said analog floating gate storage devices including: a select node, a first P-channel MOS transistor, having a source connected to a first voltage source, a drain, and a gate connected to said select node, a second P-channel MOS transistor, having a source connected to a second voltage source, a drain, and a gate connected to said select node, a floating gate connected to a stabilizing capacitor, a non-avalanche hot electron injection device including a collector connected to the drain of said first P-channel MOS transistor, a base connected to the drain of said second P-channel MOS transistor, an emitter connected to a third voltage source, and an insulated gate disposed above said base, said insulated gate self aligned with said collector and not overlapping said emitter, said insulated gate connected to said floating gate, means for removing electrons from said floating gate, and wherein said first, second, and third voltage sources are selected so as to cause non-avalanche hot electron injection onto said floating gate; addressing means for activating selected ones of said select nodes so as to turn on their first and second P-channel MOS transistors; an analog output voltage bus; and a high input impedance follower amplifier having an input connected to said floating gate and an output connected to said analog output voltage bus.

Claim 20

A circuit disposed on a semiconductor substrate for generating N analog voltage signals in a semiconductor integrated circuit disposed on said semiconductor substrate, including: N analog floating ate storage devices disposed on said semiconductor substrate, each of said analog floating gate storage devices including: a select node, a first P-channel MOS transistor, having a source connected to a first voltage source, a drain, and a gate connected to said select node, a second P-channel MOS transistor, having a source connected to a second voltage source, a drain, and a gate connected to said select node, a floating gate connected to a stabilizing capacitor, a non-avalanche hot electron injection device including a collector connected to the drain of said first P-channel MOS transistor, a base connected to the drain of said second P-channel MOS transistor, an emitter connected to a third voltage source, and an insulated gate disposed above said base, said insulated gate self aligned with said collector and not overlapping said emitter, said insulated gate connected to said floating gate, means for removing electrons from said floating gate, and wherein said first, second, and third voltage sources are selected so as to cause non-avalanche hot electron injection onto said floating gate; addressing means for activating selected ones of said select nodes so as to turn on their first and second P-channel MOS transistors; an analog output voltage bus; and a high input impedance follower amplifier having an input connected to said floating gate and an output connected to said analog output voltage bus.

Claim 21

The circuit of claim 15 wherein said means for removing electrons from said floating gates includes means for illuminating said floating gates with ultraviolet radiation.

Claim 22

The circuit of claim 16 wherein said means for removing electrons from said floating gates comprises means for tunneling electrons from said floating gates.

Claim 23

The circuit of claim 16 wherein said analog output voltage bus has a capacitance associated therewith, said capacitance having a value greater than the inherent capacitance associated with said bus and further including means for turning off the output of said follower amplifier.

Claim 24

The circuit of claim 19, further including: a monitor/dynamic load line; an analog pass gate connected between said analog output voltage bus and said monitor/dynamic load line; and means for providing a strobe signal to said analog pass gate.

Claim 25

The circuit of claim 1, further including: a diode-connected P-channel MOS transistor having a source connected to a first voltage rail, said diode-connected P-channel MOS transistor having a capacitor connected between its gate and source; an N-channel MOS transistor having its gate connected to said analog output voltage bus and its drain connected to the drain of said diode connected P-channel MOS transistor.

Claim 26

The circuit of claim 1, further including: a diode-connected N-channel MOS transistor having a source connected to a first voltage rail, said diode-connected N-channel MOS transistor having a capacitor connected between its gate and source; an MOS transistor having its gate connected to said analog output voltage bus and its source connected to the drain of said diode-connected N-channel MOS transistor.

Claim 27

The circuit of claim 21, further including a diode-connected N-channel MOS transistor having a source connected to a second voltage rail, and a drain connected to the source of said N-channel MOS transistor, said diode connected N-channel MOS transistor having a capacitor connected between its gate and source.

Claim 28

The circuit of claim 22, wherein said MOS transistor is an N-channel MOS transistor.

Claim 29

The circuit of claim 23, wherein said MOS transistor is an N-channel MOS transistor.