US5170227A
Expired / Lapsed
US
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Mask rom having monocrystalline silicon conductors
Assignee: Mitsubishi Electric Corp
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Filing: 1990-03-14
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Granted: 1992-12-08
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Expires: 2010-03-14
Abstract
Abstract A method for producing a mask ROM having an array of memory cells in which pn junctions obtained by introducing P-type impurities by ion implantation onto the surface of an N-type electrically conductive layers obtained in turn by introducing N-type impurities into the polysilicon layers are formed as memory cells in a matrix configuration. The polysilicon layers that are to be rendered into the N-type electrically conductive layers are previously monocrystallized by laser annealing. In this manner, the N-type electrically conductive layers into which P-type impurities are introduced by ion implantation at the time of formation of the pn junction are turned into a monocrystalline layer so that the surface of the N-type electrically conductive layers may be uniformly and easily converted into the P-type by this ion implantation. In short, the junction surface of the pn junction used as the memory cell becomes uniform. In this manner, the memory cell having desirable pn junction properties, that is, suited for practical application, may be produced easily.
Inventors
- 👤 Masahide Kaneko
- 👤 Kenji Noguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 07:15
CPC Classifications
H; H10; H10B; H10B20/00; Y; Y10; Y10S; Y10S257/00; Y10S257/91
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
157 words
A mask-type read only memory comprising: a substrate, an insulator formed on said substrate, a plurality of first conductors formed on said insulator and having at least a layer of monocrystalline silicon of a first conductivity type at a surface thereof which is remote from said substrate, said conductors having a predetermined cross-sectional area, an insulator layer formed on said conductors and having contact holes selectively formed therein above selected portions of said conductors, a plurality of second conductors formed above and within said contact holes, and impurity implanted regions of a second impurity type and a concentration sufficient to form pn junctions within said first conductors at least at a lower end of said contact holes, said impurity implanted regions having a width determined by a size of said contact holes and a selected depth, the product of said width and depth being less than a predetermined fraction of said cross-sectional area of said first conductors.
Claim 2
Dependent Claim
157 words
A mask-type read only memory comprising: a substrate, an insulator formed on said substrate, a plurality of first conductors formed on said insulator and having at least a layer of monocrystalline silicon of a first conductivity type at a surface thereof which is remote from said substrate, said conductors having a predetermined cross-sectional area, an insulator layer formed on said conductors and having contact holes selectively formed therein above selected portions of said conductors, a plurality of second conductors formed above and within said contact holes, and impurity implanted regions of a second impurity type and a concentration sufficient to form pn junctions within said first conductors at least at a lower end of said contact holes, said impurity implanted regions having a width determined by a size of said contact holes and a selected depth, the product of said width and depth being less than a predetermined fraction of said cross-sectional area of said first conductors.
Claim 3
Dependent Claim
199 words
An integrated circuit having a mask-type read only memory and a peripheral circuit containing at least one field effect transistor of a first conductivity type channel and having source and drain regions formed in a monocrystalline substrate, said integrated circuit comprising: a monocrystalline silicon substrate, an insulator formed on a portion of said substrate corresponding to said mask-type read only memory, said mask-type read only memory comprising first and second pluralities of elongated conductors, said first and second pluralities of elongated conductors being respectively disposed at an angle to each other so as to define intersection points and pn junctions disposed between ones of said first and second pluralities of conductors at selected intersections thereof, wherein said first plurality of conductors are disposed on said insulator and each conductor of said first plurality of conductors is formed to include at least a layer of monocrystalline silicon of the same conductivity type as said channel of said field effect transistor at a surface thereof which is remote from said insulator, whereby said pn junctions of said mask-type read only memory and said source and drain regions of said at least one field effect transistor are simultaneously formed by impurity implantation.
Claim 4
Dependent Claim
199 words
An integrated circuit having a mask-type read only memory and a peripheral circuit containing at least one field effect transistor of a first conductivity type channel and having source and drain regions formed in a monocrystalline substrate, said integrated circuit comprising: a monocrystalline silicon substrate, an insulator formed on a portion of said substrate corresponding to said mask-type read only memory, said mask-type read only memory comprising first and second pluralities of elongated conductors, said first and second pluralities of elongated conductors being respectively disposed at an angle to each other so as to define intersection points and pn junctions disposed between ones of said first and second pluralities of conductors at selected intersections thereof, wherein said first plurality of conductors are disposed on said insulator and each conductor of said first plurality of conductors is formed to include at least a layer of monocrystalline silicon of the same conductivity type as said channel of said field effect transistor at a surface thereof which is remote from said insulator, whereby said pn junctions of said mask-type read only memory and said source and drain regions of said at least one field effect transistor are simultaneously formed by impurity implantation.
Claim 5
Dependent Claim
189 words
A mask ROM produced by a method comprising the steps of: forming a plurality of parallel band-like polysilicon layers on a substrate having a planar surface, laser annealing said polysilicon layer for conversion thereof into monocrystallized layers having surfaces, introducing impurities of a first conductivity type into said monocrystallized layers for forming monocrystalline layers of said first conductivity type, forming an insulator layer on said monocrystalline layers of said first conductivity type, forming openings in regions of said insulator layer in accordance with the information to be stored in the mask ROM, said openings reaching the surfaces of said monocrystalline layers of said first conductivity type, introducing impurities of a second conductivity type of opposite polarity to said first conductivity type through said openings to form regions of said second conductivity type, and forming a plurality of parallel band-like conductive layers in regions of said insulator layer including those regions in which said openings are formed, said conductive layers intersecting said monocrystalline layers of said first conductivity type, said conductive layers connecting to said regions of said second conductivity type in said regions in which said openings are formed.
Claim 6
Dependent Claim
189 words
A mask ROM produced by a method comprising the steps of: forming a plurality of parallel band-like polysilicon layers on a substrate having a planar surface, laser annealing said polysilicon layer for conversion thereof into monocrystallized layers having surfaces, introducing impurities of a first conductivity type into said monocrystallized layers for forming monocrystalline layers of said first conductivity type, forming an insulator layer on said monocrystalline layers of said first conductivity type, forming openings in regions of said insulator layer in accordance with the information to be stored in the mask ROM, said openings reaching the surfaces of said monocrystalline layers of said first conductivity type, introducing impurities of a second conductivity type of opposite polarity to said first conductivity type through said openings to form regions of said second conductivity type, and forming a plurality of parallel band-like conductive layers in regions of said insulator layer including those regions in which said openings are formed, said conductive layers intersecting said monocrystalline layers of said first conductivity type, said conductive layers connecting to said regions of said second conductivity type in said regions in which said openings are formed.
Claim 7
Dependent Claim
199 words
An integrated circuit having a mask-type read only memory and a peripheral circuit containing at least one field effect transistor of a first conductivity type channel and having source and drain regions formed in a monocrystalline substrate, said integrated circuit comprising: a monocrystalline silicon substrate, an insulator formed on a portion of said substrate corresponding to said mask-type read only memory, said mask-type read only memory comprising first and second pluralities of elongated conductors, said first and second pluralities of elongated conductors being respectively disposed at an angle to each other so as to define intersection points and pn junctions disposed between ones of said first and second pluralities of conductors at selected intersections thereof, wherein said first plurality of conductors are disposed on said insulator and each conductor of said first plurality of conductors is formed to include at least a layer of monocrystalline silicon of the same conductivity type as said channel of said field effect transistor at a surface thereof which is remote from said insulator, wherein said pn junctions of said mask-type read only memory and said source and drain regions of said at least one field effect transistor are simultaneously formed by impurity implantation.
Claim 8
Dependent Claim
199 words
An integrated circuit having a mask-type read only memory and a peripheral circuit containing at least one field effect transistor of a first conductivity type channel and having source and drain regions formed in a monocrystalline substrate, said integrated circuit comprising: a monocrystalline silicon substrate, an insulator formed on a portion of said substrate corresponding to said mask-type read only memory, said mask-type read only memory comprising first and second pluralities of elongated conductors, said first and second pluralities of elongated conductors being respectively disposed at an angle to each other so as to define intersection points and pn junctions disposed between ones of said first and second pluralities of conductors at selected intersections thereof, wherein said first plurality of conductors are disposed on said insulator and each conductor of said first plurality of conductors is formed to include at least a layer of monocrystalline silicon of the same conductivity type as said channel of said field effect transistor at a surface thereof which is remote from said insulator, wherein said pn junctions of said mask-type read only memory and said source and drain regions of said at least one field effect transistor are simultaneously formed by impurity implantation.
Claim 9
Dependent Claim
169 words
An integrated circuit having a mask-type read only memory and a peripheral circuit containing at least one field effect transistor of a first conductivity type channel and having source and drain regions formed in a monocrystalline substrate, said integrated circuit comprising: a monocrystalline silicon substrate, an insulator formed on a portion of said substrate corresponding to said mask-type read only memory, said mask-type read only memory comprising first and second pluralities of elongated conductors, said first and second pluralities of elongated conductors being respectively disposed at an angle to each other so as to define intersection points and pn junctions disposed between ones of said first and second pluralities of conductors at selected intersections thereof, wherein said first plurality of conductors are disposed on said insulator and each conductor of said first plurality of conductors is formed to include at least a layer of monocrystalline silicon of the same conductivity type as said channel of said field effect transistor at a surface thereof which is remote from said insulator.
Claim 10
Dependent Claim
169 words
An integrated circuit having a mask-type read only memory and a peripheral circuit containing at least one field effect transistor of a first conductivity type channel and having source and drain regions formed in a monocrystalline substrate, said integrated circuit comprising: a monocrystalline silicon substrate, an insulator formed on a portion of said substrate corresponding to said mask-type read only memory, said mask-type read only memory comprising first and second pluralities of elongated conductors, said first and second pluralities of elongated conductors being respectively disposed at an angle to each other so as to define intersection points and pn junctions disposed between ones of said first and second pluralities of conductors at selected intersections thereof, wherein said first plurality of conductors are disposed on said insulator and each conductor of said first plurality of conductors is formed to include at least a layer of monocrystalline silicon of the same conductivity type as said channel of said field effect transistor at a surface thereof which is remote from said insulator.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-08 | 1996-06-08 | 1996-12-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-08 | 2000-06-08 | 2000-12-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-08 | 2004-06-08 | 2004-12-08 | $7700.00 | Window Closed / Lapsed |