US5173448A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for fabricating a semiconductor device
Assignee: Sharp Corp
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Filing: 1991-11-14
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Granted: 1992-12-22
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Expires: 2011-11-14
Abstract
Abstract The present invention provides a process for fabricating a semiconductor device including the steps of: depositing a CVD film by a bias ECRCVD process on a wiring layer having an intended contact region in which a wiring line are made wider than in other regions; coating planarly the CVD film with a resist film; etching the resist film back so as to expose a protuberance of the CVD film formed above the inteded contact region; and etching the protuberance and the CVD film thereunder to open a contact hole down to the intended contact region of the wiring layer.
Inventors
- 👤 Masahiko Yanagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 09:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
95 words
A process for fabricating a semiconductor device comprising the steps of: depositing a CVD film by a bias ECRCVD process on a wiring layer having an intended contact region in which a wiring line is made wider than in other regions; coating planarly the CVD film with a resist film; etching the resist film back so as to expose a protuberance of the CVD film formed above the intended contact region; and etching the protuberance and the CVD film thereunder to open a contact hole down to the intended contact region of the wiring layer.
Claim 2
Dependent Claim
95 words
A process for fabricating a semiconductor device comprising the steps of: depositing a CVD film by a bias ECRCVD process on a wiring layer having an intended contact region in which a wiring line is made wider than in other regions; coating planarly the CVD film with a resist film; etching the resist film back so as to expose a protuberance of the CVD film formed above the intended contact region; and etching the protuberance and the CVD film thereunder to open a contact hole down to the intended contact region of the wiring layer.
Claim 3
Dependent Claim
27 words
A process as set forth in claim 1, wherein the thickness of the CVD film is 4500-6500 Å; and the height of the protuberance is 1000-2000 Å.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-22 | 1996-06-22 | 1996-12-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-22 | 2000-06-22 | 2000-12-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-22 | 2004-06-22 | 2004-12-22 | $7700.00 | Window Closed / Lapsed |