Organic thin film controlled molecular epitaxy

Claim 2

A process comprising the steps of: (a) providing a substrate, (b) depositing from the vapor phase and crystallographically, uniaxially orienting a first organic seed layer onto at least one surface of the substrate, (c) depositing from the vapor phase a second organic layer onto the oriented seed layer to provide a layered structure wherein the second layer is epitaxial with the first layer, (d) optionally, depositing from the vapor phase at least one additional crystalline organic layer onto the deposited layers of the resulting layered structure to provide a multilayered article having epitaxially oriented layers.

Claim 3

The process according to claim 1 wherein said layers have a crystallographic molecular stacking axis inclined on average at an angle in the range of 0 to less than 90 degrees with respect to the surface normal direction of the substrate.

Claim 4

The process according to claim 1 wherein said layers have a crystallographic molecular stacking axis which on average is parallel to the substrate surface.

Claim 5

The process according to claim 2 wherein said seed layer is crystallographically uniaxially oriented in a physical vapor transport process.

Claim 6

The process according to claim 2 wherein said seed layer is crystallographically uniaxially oriented by means of a vacuum sublimation deposition process in which said substrate is maintained at a temperature having a value in the range of 0.31 to 0.35 times the boiling point in degrees Kelvin of the organic seed layer compound.

Claim 7

The process according to claim 2 wherein said seed layer is a phthalocyanine compound which was deposited onto said substrate in a vacuum sublimation process, wherein during which process said substrate was maintained at a temperature in the range of 0° to 15° C.

Claim 8

The process according to claim 3 wherein said seed layer is a phthalocyanine compound which was deposited onto said substrate in a vacuum sublimation process, wherein during which process said substrate was maintained at a temperature in the range of less than 0° C. and greater than 15° C.

Claim 9

A process comprising the steps of: (a) providing a substrate, (b) masking at least a portion of a surface of the substrate to provide a masked patterned substrate, (c) depositing from the vapor phase and crystallographically uniaxially orienting a first organic seed layer onto the masked patterned substrate to provide an oriented patterned seed layer, and epitaxially depositing from the vapor phase at least one additional crystalline organic layer onto the oriented patterned seed layer without the mask present, to provide the patterned article having epitaxially oriented layers.

Claim 10

A process comprising the steps of: (a) providing a substrate, (b) masking at least a portion of a surface of the substrate to provide a masked patterned substrate, (c) depositing from the vapor phase and crystallographically uniaxially orienting a first organic seed layer onto the masked patterned substrate to provide an oriented patterned seed layer, and epitaxially depositing from the vapor phase at least one additional crystalline organic layer onto the oriented patterned seed layer without the mask present, to provide the patterned article having epitaxially oriented layers.

Claim 11

A process comprising the steps of: (a) providing a substrate and an organic source material, (b) providing an evacuable, sealable chamber having two ends, the chamber having a means for vacuum outgassing the interior, means for introducing a buffer gas, a means for providing a temperature gradient between the two ends, the temperature of the first end being hotter than that of the second end, and outgassing the chamber, (c) introducing the substrate into the chamber, and positioning it at the second end, (d) introducing the source material into the chamber and positioning it near the first end, (e) outgassing he chamber to a pressure in the range of 10 -6 to 10 -10 Torr, and optionally introducing a buffer gas into the chamber at a pressure between 0.001 Torr and 10,000 Torr, (f) applying heat to the chamber such that the first end approaches 400° C. or is sufficient to sublime the source material, while cooling the second end to a temperature in the range of 20° C. and 100° C., (g) continuing such heating for a period of time sufficient to deposit the desired coating layer of source material at a thickness onto the substrate sufficient to provide a uniaxially oriented organic coated layer whose crystallographic molecular stacking axis is substantially inclined on average in the range of 0 degrees to less than 90 degrees with respect to the surface normal direction of the substrate, and (h) applying at least one additional organic coating over said coated substrate by depositing from the vapor phase at least one additional layer of crystalline organic material to provide a layered structure wherein the additionally coated layers are epitaxial with said coated layer of source material.

Claim 12

A process comprising the steps of: (a) providing a substrate and an organic source material, (b) providing an evacuable, sealable chamber having two ends, the chamber having a means for vacuum outgassing the interior, means for introducing a buffer gas, a means for providing a temperature gradient between the two ends, the temperature of the first end being hotter than that of the second end, and outgassing the chamber, (c) introducing the substrate into the chamber, and positioning it at the second end, (d) introducing the source material into the chamber and positioning it near the first end, (e) outgassing he chamber to a pressure in the range of 10 -6 to 10 -10 Torr, and optionally introducing a buffer gas into the chamber at a pressure between 0.001 Torr and 10,000 Torr, (f) applying heat to the chamber such that the first end approaches 400° C. or is sufficient to sublime the source material, while cooling the second end to a temperature in the range of 20° C. and 100° C., (g) continuing such heating for a period of time sufficient to deposit the desired coating layer of source material at a thickness onto the substrate sufficient to provide a uniaxially oriented organic coated layer whose crystallographic molecular stacking axis is substantially inclined on average in the range of 0 degrees to less than 90 degrees with respect to the surface normal direction of the substrate, and (h) applying at least one additional organic coating over said coated substrate by depositing from the vapor phase at least one additional layer of crystalline organic material to provide a layered structure wherein the additionally coated layers are epitaxial with said coated layer of source material.