Three dimensional ccd image sensor

Claim 2

A three dimensional CCD image sensor, comprising: a silicon substrate; an oxide layer formed to a desired thickness on said silicon substrate; a plurality of gate electrodes formed repeatedly at a desired interval on said oxide layer, for applying clock signals; a thin gate oxide layer formed on a whole surface of said oxide layer including said plurality of gate electrodes; a P type epitaxial layer formed to a predetermined thickness on said gate oxide layer; a plurality of N type light receiving regions formed on an upper surface of said P type epitaxial layer, for receiving light; a plurality of N type VCCD regions formed on a lower surface of said P type epitaxial layer, for inputting signal charges of light being produced from said plurality of N type light receiving regions, such that said plurality of N type light receiving regions and said plurality of N type VCCD regions are formed opposite to each other and spaced in sequence at a desired spacing interval on said upper and lower surfaces of said P type epitaxial layer; a desired area of a charge transfer path formed out of the P type epitaxial layer between each of said plurality of N type light receiving regions and each of said plurality of N type VCCD regions, said signal charges of light passed through said charge transfer path; and a P + charge transfer barrier formed to a predetermined thickness at the remaining portion except where said charge transfer path is to be formed, between each of said plurality of N type light receiving regions and each of said plurality of N type VCCD regions; whereby said signal charges stored in the lower side of each said plurality of N type light receiving regions are transferred to the corresponding N type VCCD regions.

Claim 3

A three-dimensional CCD image sensor in accordance with claim 1, wherein said plurality of gate electrodes include a first through a fourth gate electrodes, said first gate electrode being formed under said plurality of N type light receiving regions in an odd horizontal line, said third gate electrode being formed under said plurality of N type light receiving regions in an even horizontal line, and said second and fourth gate electrodes being formed under below and between said plurality of N type light receiving regions in said odd horizontal line and said plurality of N type light receiving regions in said even horizontal line, for performing a four phase clocking operation.

Claim 4

A three-dimensional CCD image sensor in accordance with claim 1 further comprising: a P + type channel stop layer formed between said plurality of N type light receiving regions, each being arranged on a two-dimensional plane; and a light blocking layer formed on said P + type channel stop layer.

Claim 5

A three-dimensional CCD image sensor in accordance with claim 1, wherein materials of said plurality of gate electrodes are polysilicons of the same component.

Claim 6

A three-dimensional CCD image sensor in accordance with claim 1, wherein said N type light receiving region includes a photodiode using a PN junction.

Claim 7

A three dimensional CCD image sensor, comprising: a silicon substrate; an oxide layer formed to a desired thickness on said silicon substrate; a plurality of gate electrodes formed of polysilicon layers separated from each other by a desired separation interval on said oxide layer, said gate electrodes constructed and arranged for receiving clock signals; a thin gate oxide layer formed on the whole surface of said oxide layer including said plurality of gate electrodes; an N + type ion layer formed on the surface of gate oxide layer using low energy; a P type epitaxial layer formed to a predetermined thickness on said gate oxide layer and the N + type ion layers; a plurality of N type light receiving regions formed on the upper surface of said P type epitaxial layer, for receiving light; a plurality of N type VCCD formed on the lower surface of said P type epitaxial layer by diffusing the N + regions, for inputting signal charges of light produced from said plurality of N type light receiving regions; wherein the layers are arranged such that said plurality of N type light receiving regions and said plurality of N type VCCD regions are formed opposite to each other and spaced in sequence at a desired spacing interval on said upper and lower surfaces of said P type epitaxial layer; a desired area of a charge transfer path formed out of the P type epitaxial layer between each of said plurality of N type light receiving regions and each of said plurality of N type VCCD regions, said signal charges of light passed through said charge transfer path; a P + type charge transfer barrier formed to a predetermined thickness at the remaining portion, between each of said plurality of N type light receiving regions and each of said plurality of N type VCCD regions except where said charge transfer path is to be formed; whereby said signal charges stored in the lower side of each said plurality of N type light receiving regions are transferred to the corresponding N type VCCD regions by clock signals applied to said gate electrodes.

Claim 8

A three dimensional CCD image sensor, comprising: a silicon substrate; an oxide layer formed to a desired thickness on said silicon substrate; a plurality of gate electrodes formed of polysilicon layers separated from each other by a desired separation interval on said oxide layer, said gate electrodes constructed and arranged for receiving clock signals; a thin gate oxide layer formed on the whole surface of said oxide layer including said plurality of gate electrodes; an N + type ion layer formed on the surface of gate oxide layer using low energy; a P type epitaxial layer formed to a predetermined thickness on said gate oxide layer and the N + type ion layers; a plurality of N type light receiving regions formed on the upper surface of said P type epitaxial layer, for receiving light; a plurality of N type VCCD formed on the lower surface of said P type epitaxial layer by diffusing the N + regions, for inputting signal charges of light produced from said plurality of N type light receiving regions; wherein the layers are arranged such that said plurality of N type light receiving regions and said plurality of N type VCCD regions are formed opposite to each other and spaced in sequence at a desired spacing interval on said upper and lower surfaces of said P type epitaxial layer; a desired area of a charge transfer path formed out of the P type epitaxial layer between each of said plurality of N type light receiving regions and each of said plurality of N type VCCD regions, said signal charges of light passed through said charge transfer path; a P + type charge transfer barrier formed to a predetermined thickness at the remaining portion, between each of said plurality of N type light receiving regions and each of said plurality of N type VCCD regions except where said charge transfer path is to be formed; whereby said signal charges stored in the lower side of each said plurality of N type light receiving regions are transferred to the corresponding N type VCCD regions by clock signals applied to said gate electrodes.

Claim 9

A three-dimensional CCD image sensor in accordance with claim 6, wherein said plurality of gate electrodes include first through fourth gate electrodes, said first gate electrode formed under said plurality of N type light receiving regions in an odd horizontal line, said third gate electrode formed under said plurality of N type light receiving regions in an even horizontal line, and said second and fourth gate electrodes formed below and between said plurality of N type light receiving regions in said odd horizontal line and said plurality of N type light receiving regions in said even horizontal line, for performing a four phase clocking operation.

Claim 10

A three-dimensional CCD image sensor in accordance with claim 6, further comprising: a P + type channel stop layer (9) formed between said plurality of N type light receiving regions (10), each arranged on a two-dimensional plane; and a light blocking layer (11) formed on said P + type channel stop layer (9).

Claim 11

A three-dimensional CCD image sensor in accordance with claim 6, wherein materials of said plurality of gate electrodes are polysilicons of the same component.

Claim 12

A three-dimensional CCD image sensor in accordance with claim 6, wherein said N type light receiving region (10) includes a photodiode using a PN junction.

Claim 13

A three dimensional CCD image sensor, comprising: a silicon substrate; an oxide layer formed on the silicon substrate; a plurality of gate electrodes for applying clock signals formed repeatedly at a desired interval on the oxide layer; a thin gate oxide layer formed on the surface of the oxide layer and the gate electrodes a P type epitaxial layer formed to a predetermined thickness on said gate oxide layer, the P type epitaxial layer having an upper and lower surface; a plurality of N type light receiving regions formed on the upper surface of the P type epitaxial layer; an N type VCCD region associated with each N type light receiving region, each VCCD region formed on the lower surface of said P type epitaxial layer opposite the associated N type light receiving region, such that the area of the P type epitaxial layer located in between each pair of N type light receiving regions and N type VCCD region comprises a charge transfer path through which signal charges stored in the lower side of each N type light receiving region may transfer to the associated N type VCCD region; and a plurality of P + type charge transfer barriers formed in the P type epitaxial layer between each of said plurality of charge transfer paths.

Claim 14

A three dimensional CCD image sensor, comprising: a silicon substrate; an oxide layer formed on the silicon substrate; a plurality of gate electrodes for applying clock signals formed repeatedly at a desired interval on the oxide layer; a thin gate oxide layer formed on the surface of the oxide layer and the gate electrodes a P type epitaxial layer formed to a predetermined thickness on said gate oxide layer, the P type epitaxial layer having an upper and lower surface; a plurality of N type light receiving regions formed on the upper surface of the P type epitaxial layer; an N type VCCD region associated with each N type light receiving region, each VCCD region formed on the lower surface of said P type epitaxial layer opposite the associated N type light receiving region, such that the area of the P type epitaxial layer located in between each pair of N type light receiving regions and N type VCCD region comprises a charge transfer path through which signal charges stored in the lower side of each N type light receiving region may transfer to the associated N type VCCD region; and a plurality of P + type charge transfer barriers formed in the P type epitaxial layer between each of said plurality of charge transfer paths.