US5189594A
Expired / Lapsed
US
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Capacitor in a semiconductor integrated circuit and non-volatile memory using same
Assignee: Rohm Co Ltd
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Filing: 1992-04-30
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Granted: 1993-02-23
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Expires: 2012-04-30
Abstract
Abstract A capacitor used in a semiconductor integrated circuit, in which lower electrode 31, a ferroelectric film 33, and an upper electrode in the form of a comb are formed on the source region 13a of a field-effect transistor 10 in the stated order, to form a ferroelectric capacitor which is apparently made of a plurality of capacitors small in area which are connected in parallel to one another. Thereby, the capacitor for a semiconductor integrated circuit can store a sufficient amount of signal charge, and is short in switching time.
Inventors
- 👤 Kazuhiro Hoshiba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:25
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/005; H01G4/012; H10; H10B; H10B53/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
50 words
A capacitor in a semiconductor integrated circuit, comprising: a lower electrode formed on a semiconductor substrate; a ferroelectric film formed on said lower electrode; and an upper electrode formed on said ferroelectric film; wherein at least one of said upper and lower electrodes is in the form of a comb.
Claim 2
Dependent Claim
50 words
A capacitor in a semiconductor integrated circuit, comprising: a lower electrode formed on a semiconductor substrate; a ferroelectric film formed on said lower electrode; and an upper electrode formed on said ferroelectric film; wherein at least one of said upper and lower electrodes is in the form of a comb.
Claim 3
Dependent Claim
38 words
A capacitor as claimed in claim 1, wherein said ferroelectric film is made of a ferroelectric material selected from a group consisting of lead zirconate-titanate (PZT) and (Pb x La 1-x )(Zr y Ti 1-y )O 3 (PLZT).
Claim 4
Dependent Claim
51 words
A non-volatile memory comprising: a signal charge storing capacitor having a lower electrode formed on a semiconductor substrate; a ferroelectric film formed on said lower electrode; and an upper electrode on said ferroelectric film; wherein at least one of said upper and lower electrodes is in the form of a comb.
Claim 5
Dependent Claim
51 words
A non-volatile memory comprising: a signal charge storing capacitor having a lower electrode formed on a semiconductor substrate; a ferroelectric film formed on said lower electrode; and an upper electrode on said ferroelectric film; wherein at least one of said upper and lower electrodes is in the form of a comb.
Claim 6
Dependent Claim
38 words
A capacitor as claimed in claim 3, wherein said ferroelectric film is made of a ferroelectric material selected from a group consisting of lead zirconate-titanate (PZT) and (Pb x La 1-x )(Zr y Ti 1-y )O 3 (PLZT).
Claim 7
Dependent Claim
68 words
A capacitor in a semiconductor integrated circuit, comprising: a lower electrode formed on a semiconductor substrate, being in a form of a comb; a ferroelectric film formed on said lower electrode; and an upper electrode on said ferroelectric film, being in a form of a comb; wherein said upper and lower electrodes are so arranged that the teeth of said upper electrode cross those of said lower electrode.
Claim 8
Dependent Claim
68 words
A capacitor in a semiconductor integrated circuit, comprising: a lower electrode formed on a semiconductor substrate, being in a form of a comb; a ferroelectric film formed on said lower electrode; and an upper electrode on said ferroelectric film, being in a form of a comb; wherein said upper and lower electrodes are so arranged that the teeth of said upper electrode cross those of said lower electrode.
Claim 9
Dependent Claim
38 words
A capacitor as claimed in claim 5, wherein said ferroelectric film is made of a ferroelectric material selected from a group consisting of lead zirconate-titanate (PZT) and (Pb x La 1-x )(Zr y Ti 1-y )O 3 (PLZT).
Claim 10
Dependent Claim
70 words
A non-volatile memory comprising: a signal charge storing capacitor having a lower electrode formed on a semiconductor substrate, being in a form of a comb; a ferroelectric film formed on said lower electrode; and an upper electrode on said ferroelectric film, being in a form of a comb; wherein said upper and lower electrodes are so arranged that the teeth of said upper electrode cross those of said lower electrode.
Claim 11
Dependent Claim
70 words
A non-volatile memory comprising: a signal charge storing capacitor having a lower electrode formed on a semiconductor substrate, being in a form of a comb; a ferroelectric film formed on said lower electrode; and an upper electrode on said ferroelectric film, being in a form of a comb; wherein said upper and lower electrodes are so arranged that the teeth of said upper electrode cross those of said lower electrode.
Claim 12
Dependent Claim
38 words
A capacitor as claimed in claim 7, wherein said ferroelectric film is made of a ferroelectric material selected from a group consisting of lead zirconate-titanate (PZT) and (Pb x La 1-x )(Zr y Ti 1-y )O 3 (PLZT).
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-02-23 | 1996-08-24 | 1997-02-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-02-23 | 2000-08-24 | 2001-02-23 | $3760.00 | Window Closed / Lapsed |
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