US5200969A
Expired / Lapsed
US
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Switchable multiple wavelength semiconductor laser
Assignee: Xerox Corp
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Filing: 1991-10-18
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Granted: 1993-04-06
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Expires: 2011-10-18
Abstract
Abstract A multiple wavelength semiconductor laser includes a plurality of layers, one or more of said layers comprising a carrier confinement (multiple quantum well) active region of the type wherein at least two confining regions (quantum wells) contained in the active region are formed such that one quantum level of a first region (quantum well) is at the same energy level as a different quantum level of a second region (quantum well). This alignment of the quantum levels between two confinement regions (quantum wells) results in the recombination of carriers from one region augmenting the recombination of carriers from the other region, the net effect being an output intensity at both shorter and longer wavelengths of operation more nearly equal than heretofore available. Appropriate placement of the regions within the laser waveguide also facilitates a matching of the output intensity profile with a desired output mode, e.g., the fundamental mode TE00.
Inventors
- 👤 Thomas L. Paoli
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 16:36
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; B; B82; B82Y; B82Y20/00; H01S3/00; H01S3/10; H01S3/106; H01S3/1061; H01S3/05; H01S3/08; H01S3/08086; H01S3/0809; H01S5/02; H01S5/0206; H01S5/0208; H01S5/04; H01S5/042; H01S5/0421; H01S5/0422; H01S5/06; H01S5/0601; H01S5/062; H01S5/06209; H01S5/0622; H01S5/0625; H01S5/06255; H01S5/341; H01S5/3412; H01S5/3418; H01S5/343; H01S5/34313; H01S5/3432; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4043; H01S5/4087
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
200 words
A solid state semiconductor laser switchable between at least two different output wavelengths, comprising: a laser body of the type including a plurality of contiguous layers of semiconductor material, located in an optical path, at least first and second portions of said layers of the type providing carrier quantization in at least one dimension, wherein said first and second portions are formed such that one quantum level of said first portion is at the same energy level as a different quantum level of said second portion; means for providing gain in said optical path when an electrical bias is applied thereto; means for providing loss in said optical path when an electrical bias is applied thereto to thereby limit the output of said laser to a first wavelength which corresponds to an energy level of said first portion which is not found in said second portion when a first electrical bias is applied thereto, and to thereby limit the output of said laser to a second wavelength different than said first wavelength which corresponds to an energy level found in both said first and second portions when a second electrical bias, different than said first electrical bias, is applied thereto.
Claim 2
Dependent Claim
200 words
A solid state semiconductor laser switchable between at least two different output wavelengths, comprising: a laser body of the type including a plurality of contiguous layers of semiconductor material, located in an optical path, at least first and second portions of said layers of the type providing carrier quantization in at least one dimension, wherein said first and second portions are formed such that one quantum level of said first portion is at the same energy level as a different quantum level of said second portion; means for providing gain in said optical path when an electrical bias is applied thereto; means for providing loss in said optical path when an electrical bias is applied thereto to thereby limit the output of said laser to a first wavelength which corresponds to an energy level of said first portion which is not found in said second portion when a first electrical bias is applied thereto, and to thereby limit the output of said laser to a second wavelength different than said first wavelength which corresponds to an energy level found in both said first and second portions when a second electrical bias, different than said first electrical bias, is applied thereto.
Claim 3
Dependent Claim
198 words
A solid state semiconductor laser switchable between at least two different output wavelengths, comprising: a laser body of the type including a plurality of contiguous layers of semiconductor material, located in an optical path, at least a first and second portions of said layers of the type providing carrier quantization in at least one dimension, wherein said first and second portions thereof are formed such that one quantum level of said first portion is at the same energy level as a different quantum level of said second portion; means for providing gain in said optical path when an electrical bias is applied thereto; first loss means for providing loss in said optical path when an electrical bias is applied thereto to thereby limit the output of said laser to a first wavelength which corresponds to an energy level of said first portion which is not found in said second portion, second loss means for providing loss in said optical path when an electrical bias is applied thereto to thereby limit the output of said laser to a second wavelength different than said first wavelength which corresponds to an energy level found in both said first and second portion.
Claim 4
Dependent Claim
198 words
A solid state semiconductor laser switchable between at least two different output wavelengths, comprising: a laser body of the type including a plurality of contiguous layers of semiconductor material, located in an optical path, at least a first and second portions of said layers of the type providing carrier quantization in at least one dimension, wherein said first and second portions thereof are formed such that one quantum level of said first portion is at the same energy level as a different quantum level of said second portion; means for providing gain in said optical path when an electrical bias is applied thereto; first loss means for providing loss in said optical path when an electrical bias is applied thereto to thereby limit the output of said laser to a first wavelength which corresponds to an energy level of said first portion which is not found in said second portion, second loss means for providing loss in said optical path when an electrical bias is applied thereto to thereby limit the output of said laser to a second wavelength different than said first wavelength which corresponds to an energy level found in both said first and second portion.
Claim 5
Dependent Claim
47 words
The laser of claim 2, further including means for switching an electrical bias such that said bias is applied either to said first loss means or said second loss means, to thereby cause said laser to emit an output at either a first or a second wavelength.
Claim 6
Dependent Claim
34 words
The laser of claim 2, wherein said first loss means comprises a waveguide of a first width, and said second loss means comprises a waveguide of a second width different than said first width.
Claim 7
Dependent Claim
34 words
The laser of claim 2, wherein said first loss means comprises a waveguide of a first length, and said second loss means comprises a waveguide of a second length different than said first length.
Claim 8
Dependent Claim
40 words
The laser of claim 2, wherein said means for providing gain and said first loss means are coupled by an optical waveguide, and said means for providing gain and said second loss means are not coupled by an optical waveguide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-05 | 1996-10-05 | 1997-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-05 | 2000-10-05 | 2001-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-05 | 2004-10-05 | 2005-04-06 | $7700.00 | Window Closed / Lapsed |