US5213675A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reference electrode, ion sensor and method of manufacturing the same
Assignee: Terumo Corp
•
Filing: 1991-06-19
•
Granted: 1993-05-25
•
Expires: 2011-06-19
Abstract
Abstract A reference electrode for generating a reference potential on an ion sensor is disclosed. The reference electrode has a lamination film covering a surface of an electrically conductive substrate and formed by alternately laminating silver halide thin films and hydrophobic resin thin films.
Inventors
- 👤 Shuichiro Yamaguchi
- 👤 Takeshi Shimomura
- 👤 Naoto Uchida
- 👤 Teruaki Katsube
- 👤 Noboru Oyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 23:36
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/26; G01N27/403; G01N27/414
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
35 words
An ion sensor comprising an electrically conductive substrate, and redox function film formed by a neutral atom beam sputtering process on a surface of said substrate and an ion-sensitive film covering said redox function film.
Claim 2
Dependent Claim
35 words
An ion sensor comprising an electrically conductive substrate, and redox function film formed by a neutral atom beam sputtering process on a surface of said substrate and an ion-sensitive film covering said redox function film.
Claim 3
Dependent Claim
43 words
An ion sensor comprising a gate insulation film of a MOS field-effect transistor, and a redox function film formed by a neutral atom beam sputtering process on a surface of said gate insulation film and an ion-sensitive film covering said redox function film.
Claim 4
Dependent Claim
43 words
An ion sensor comprising a gate insulation film of a MOS field-effect transistor, and a redox function film formed by a neutral atom beam sputtering process on a surface of said gate insulation film and an ion-sensitive film covering said redox function film.
Claim 5
Independent Claim
68 words
A method of manufacturing an ion sensor comprising a step of forming a target of a redox function substance on a predetermined substrate surface, a step of sputtering said target by projecting a neutral atom beam onto said redox function substance to thereby form a redox function film on said substrate surface and a step of forming an ion-sensitive film on a surface of said redox function film.
Claim 6
Independent Claim
68 words
A method of manufacturing an ion sensor comprising a step of forming a target of a redox function substance on a predetermined substrate surface, a step of sputtering said target by projecting a neutral atom beam onto said redox function substance to thereby form a redox function film on said substrate surface and a step of forming an ion-sensitive film on a surface of said redox function film.
Claim 7
Dependent Claim
72 words
An ion sensor comprising: an electrically conductive first substrate; a redox function film formed on a surface of said first substrate by preparing a film formed on a second electrically conductive substrate by an electrolytic polymerization process, and then sputtering the electrolytically polymerized film as a target by a neutral atom beam, thereby depositing sputtered particles on the surface of said first substrate; and an ion-sensitive film covering said redox function film.
Claim 8
Dependent Claim
72 words
An ion sensor comprising: an electrically conductive first substrate; a redox function film formed on a surface of said first substrate by preparing a film formed on a second electrically conductive substrate by an electrolytic polymerization process, and then sputtering the electrolytically polymerized film as a target by a neutral atom beam, thereby depositing sputtered particles on the surface of said first substrate; and an ion-sensitive film covering said redox function film.
Claim 9
Dependent Claim
77 words
An ion sensor comprising: a gate insulation film of a MOS filed effect transistor; a redox function film formed on a surface of said gate insulation film by preparing a film formed on a predetermined substrate by an electrolytic polymerization process, and then sputtering the electrolytically polymerized film as a target by a neutral atom beam, thereby depositing sputtered particles on the surface of said gate insulation film; and an ion-sensitive film covering said redox function film.
Claim 10
Dependent Claim
77 words
An ion sensor comprising: a gate insulation film of a MOS filed effect transistor; a redox function film formed on a surface of said gate insulation film by preparing a film formed on a predetermined substrate by an electrolytic polymerization process, and then sputtering the electrolytically polymerized film as a target by a neutral atom beam, thereby depositing sputtered particles on the surface of said gate insulation film; and an ion-sensitive film covering said redox function film.
References Cited (Backward Citations)
US3926764A
Cited
US3932233A
Cited
US3856649A
Cited
US3957612A
Cited
US3957613A
Cited
US4280889A
Cited
US4053381A
Cited
US4269682A
Cited
US4214968A
Cited
US4507194A
Cited
US4610771A
Cited
EP0186286A1
Cited
US4753719A
Cited
US4798664A
Cited
US4816118A
Cited
US4861454A
Cited
US4871442A
Cited
GB2190399A
Cited
US4839020A
Cited
US4927516A
Cited
WO1989004959A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-05-24 | 1996-11-23 | 1997-05-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-24 | 2000-11-23 | 2001-05-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-24 | 2004-11-23 | 2005-05-25 | $7700.00 | Window Closed / Lapsed |