US5219794A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit device and method of fabricating same
Assignee: Renesas Electronics Corp
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Filing: 1992-03-13
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Granted: 1993-06-15
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Expires: 2012-03-13
Abstract
Abstract In a chip carrier wherein a semiconductor chip is face down bonded to a package substrate through solder bumps, then covered with a cap and sealed hermetically using a sealing solder, the back of the semiconductor chip being bonded closely to the underside of the cap using a solder for heat transfer, a solder preform serving as the said heat transfer solder is heat-melted and a portion of the thus melted solder is allowed to flow into the sealing portion to effect the hermetic seal of the chip. Furthermore, in order to improve the flowability of the solder preform during the melt flow thereof, a metallized layer for heat transfer formed under the heat transfer solder of the cap and a sealing metallized layer are partially connected with each other through a connecting metallized layer.
Inventors
- 👤 Toshihiko Satoh
- 👤 Tetsuya Hayashida
- 👤 Hiroshi Kikuchi
- 👤 Takeo Yamada
- 👤 Takashi Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:05
CPC Classifications
H; H10; H10W; H10W95/00; H10W72/00; H10W72/071; H10W72/0711; H10W76/00; H10W76/60; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W70/654; H10W70/655; H10W72/073; H10W72/07331; H10W72/07337; H10W72/20; H10W72/251; H10W72/252; H10W72/30; H10W72/351; H10W72/352; H10W72/851; H10W72/874; H10W72/877; H10W76/10; H10W76/17; H10W90/00; H10W90/701; H10W90/721; H10W90/724; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T29/49144
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
130 words
A method of fabricating a semiconductor device, comprising the steps of: providing a semiconductor chip having a main surface and a back, with a plurality of salient electrodes being formed on said main surface, and also providing a substrate having a plurality of electrodes on a main surface thereof; mounting said semiconductor chip on the main surface of said substrate so that said salient electrodes are electrically connected to the electrodes on the substrate; providing a cap having a heat transfer portion and a sealing portion and interposing a metallic member between the back of said semiconductor chip and said heat transfer portion; and heat-melting said metallic member and allowing a portion of the thus-melted metallic member to flow in between said sealing portion and said substrate to effect sealing.
Claim 2
Independent Claim
130 words
A method of fabricating a semiconductor device, comprising the steps of: providing a semiconductor chip having a main surface and a back, with a plurality of salient electrodes being formed on said main surface, and also providing a substrate having a plurality of electrodes on a main surface thereof; mounting said semiconductor chip on the main surface of said substrate so that said salient electrodes are electrically connected to the electrodes on the substrate; providing a cap having a heat transfer portion and a sealing portion and interposing a metallic member between the back of said semiconductor chip and said heat transfer portion; and heat-melting said metallic member and allowing a portion of the thus-melted metallic member to flow in between said sealing portion and said substrate to effect sealing.
Claim 3
Dependent Claim
18 words
A method of fabricating a semiconductor device according to claim 1, wherein said metallic member is a solder.
Claim 4
Dependent Claim
38 words
A method of fabricating a semiconductor device according to claim 1, wherein said sealing step is carried out in an equilibrium state between an atmosphere in which said semiconductor chip is present and an atmosphere outside said cap.
Claim 5
Dependent Claim
43 words
A method of fabricating a semiconductor device according to claim 1, wherein said sealing step is carried out while an atmosphere in which said semiconductor chip is present and an atmosphere outside said cap are held at pressures approximately equal to each other.
Claim 6
Independent Claim
194 words
A method of fabricating a semiconductor device, comprising the steps of: providing a semiconductor ship having a main surface and a back, with a plurality of salient electrodes being formed on said main surface, and also providing a substrate having a plurality of electrodes on a main surface thereof; mounting said semiconductor chip on the main surface of said substrate so that said salient electrodes are electrically connected to the electrodes on the substrate; providing a cap having a sealing portion and a heat transfer portion, said cap having a first metallized layer formed on said sealing portion, a second metallized layer formed on said heat transfer portion, and further having a third metallized layer which connects said first and second metallized layers partially with each other; interposing a metallic member between the back of said semiconductor chip and said second metallized layer; and heat-melting said metallic member and allowing a portion of the thus-melted metallic member to flow in between said sealing portion and said substrate to effect sealing; wherein said melted metallic member is allowed to flow from said second metallized layer to said first metallized layer through said third metallized layer.
Claim 7
Independent Claim
194 words
A method of fabricating a semiconductor device, comprising the steps of: providing a semiconductor ship having a main surface and a back, with a plurality of salient electrodes being formed on said main surface, and also providing a substrate having a plurality of electrodes on a main surface thereof; mounting said semiconductor chip on the main surface of said substrate so that said salient electrodes are electrically connected to the electrodes on the substrate; providing a cap having a sealing portion and a heat transfer portion, said cap having a first metallized layer formed on said sealing portion, a second metallized layer formed on said heat transfer portion, and further having a third metallized layer which connects said first and second metallized layers partially with each other; interposing a metallic member between the back of said semiconductor chip and said second metallized layer; and heat-melting said metallic member and allowing a portion of the thus-melted metallic member to flow in between said sealing portion and said substrate to effect sealing; wherein said melted metallic member is allowed to flow from said second metallized layer to said first metallized layer through said third metallized layer.
Claim 8
Dependent Claim
18 words
A method of fabricating a semiconductor device according to claim 5, wherein said metallic member is a solder.
Claim 9
Dependent Claim
38 words
A method of fabricating a semiconductor device according to claim 5, wherein said sealing step is carried out in an equilibrium state between an atmosphere in which said semiconductor chip is present and an atmosphere outside said cap.
Claim 10
Dependent Claim
43 words
A method of fabricating a semiconductor device according to claim 5, wherein said sealing step is carried out while an atmosphere in which said semiconductor device is present and an atmosphere outside said cap are held at pressures approximately equal to each other.
Claim 11
Independent Claim
197 words
A method of fabricating a semiconductor device, comprising the steps of: providing a semiconductor chip having a main surface and a back, with a plurality of salient electrodes being formed on said main surface, and providing a substrate having a plurality of electrodes; mounting said semiconductor chip on the main surface of said substrate so that said salient electrodes are electrically connected to the electrodes on the substrate; providing a cap having a sealing portion and a heat transfer portion positioned on an inner wall of a cavity, said cap having a first metallized layer formed on said sealing portion, a second metallized layer formed on said heat transfer portion, and further having a third metallized layer contiguous to said first metallized layer and formed on an outer wall of said sealing portion opposed to said inner wall; interposing a metallic member between the back of said semiconductor chip and said second metallized layer; and heat-melting said metallic member and allowing a portion of the thus-melted metallic member to flow in between said sealing portion and said substrate to effect sealing, wherein a portion of said melted metallic member comes into contact with said third metallized layer.
Claim 12
Independent Claim
197 words
A method of fabricating a semiconductor device, comprising the steps of: providing a semiconductor chip having a main surface and a back, with a plurality of salient electrodes being formed on said main surface, and providing a substrate having a plurality of electrodes; mounting said semiconductor chip on the main surface of said substrate so that said salient electrodes are electrically connected to the electrodes on the substrate; providing a cap having a sealing portion and a heat transfer portion positioned on an inner wall of a cavity, said cap having a first metallized layer formed on said sealing portion, a second metallized layer formed on said heat transfer portion, and further having a third metallized layer contiguous to said first metallized layer and formed on an outer wall of said sealing portion opposed to said inner wall; interposing a metallic member between the back of said semiconductor chip and said second metallized layer; and heat-melting said metallic member and allowing a portion of the thus-melted metallic member to flow in between said sealing portion and said substrate to effect sealing, wherein a portion of said melted metallic member comes into contact with said third metallized layer.
Claim 13
Independent Claim
205 words
A method of fabricating a semiconductor device, comprising the steps of: providing a semiconductor chip having a main surface and a back, with a plurality of salient electrodes being formed on said main surface, and also providing a substrate having a plurality of electrodes on a main surface thereof; mounting said semiconductor chip on the main surface of said substrate so that said salient electrodes are electrically connected to the electrodes on the substrate; providing a cap having a sealing portion and a heat transfer portion positioned on an inner wall of a cavity, said cap having a first metallized layer formed on said sealing portion, a second metallized layer formed on aid heat transfer portion, and further having a third metallized layer contiguous to said first metallized layer and electrically insulated from said second metallized layer by said inner wall; interposing a metallic member between the back of said semiconductor chip and said second metallized layer; and heat-melting said metallic member and allowing a portion of the thus-melted metallic member to flow in between said sealing portion and said substrate, wherein said melted metallic member is allowed to flow from said second metallized layer to said first metallized layer through said third metallized layer.
Claim 14
Independent Claim
205 words
A method of fabricating a semiconductor device, comprising the steps of: providing a semiconductor chip having a main surface and a back, with a plurality of salient electrodes being formed on said main surface, and also providing a substrate having a plurality of electrodes on a main surface thereof; mounting said semiconductor chip on the main surface of said substrate so that said salient electrodes are electrically connected to the electrodes on the substrate; providing a cap having a sealing portion and a heat transfer portion positioned on an inner wall of a cavity, said cap having a first metallized layer formed on said sealing portion, a second metallized layer formed on aid heat transfer portion, and further having a third metallized layer contiguous to said first metallized layer and electrically insulated from said second metallized layer by said inner wall; interposing a metallic member between the back of said semiconductor chip and said second metallized layer; and heat-melting said metallic member and allowing a portion of the thus-melted metallic member to flow in between said sealing portion and said substrate, wherein said melted metallic member is allowed to flow from said second metallized layer to said first metallized layer through said third metallized layer.
Claim 15
Dependent Claim
46 words
A method of fabricating a semiconductor device according to claim 10, wherein the distance between said third metallized layer and the main surface of said substrate is larger than the distance between the main surface of said semiconductor chip and the main surface of said substrate.
Claim 16
Independent Claim
202 words
A method of fabricating a semiconductor devices comprising the steps of: providing a semiconductor chip having a main surface and a back, with a plurality of salient electrodes being formed on said main surface, and also providing a substrate having a plurality of electrodes on a main surface thereof; mounting said semiconductor chip on the main surface of said substrate so that said salient electrodes are electrically connected to the electrodes on the substrate; providing a cap having a sealing portion and a heat transfer portion, said cap having a first metallized layer formed on said sealing portion, a second metallized layer formed on said heat transfer portion, and a third metallized layer which connects said first and second K metallized layers partially with each other, with a first metallic member being formed on said first metallized layer; interposing a second metallic member between the back of said semiconductor chip and said second metallized layer; and heat-melting said second metallic member and allowing a portion of the thus melted metallic member to flow in between said sealing portion and said substrate, wherein said melted metallic member flows from said second metallized layer to said first metallized layer through said third metallized layer.
Claim 17
Independent Claim
202 words
A method of fabricating a semiconductor devices comprising the steps of: providing a semiconductor chip having a main surface and a back, with a plurality of salient electrodes being formed on said main surface, and also providing a substrate having a plurality of electrodes on a main surface thereof; mounting said semiconductor chip on the main surface of said substrate so that said salient electrodes are electrically connected to the electrodes on the substrate; providing a cap having a sealing portion and a heat transfer portion, said cap having a first metallized layer formed on said sealing portion, a second metallized layer formed on said heat transfer portion, and a third metallized layer which connects said first and second K metallized layers partially with each other, with a first metallic member being formed on said first metallized layer; interposing a second metallic member between the back of said semiconductor chip and said second metallized layer; and heat-melting said second metallic member and allowing a portion of the thus melted metallic member to flow in between said sealing portion and said substrate, wherein said melted metallic member flows from said second metallized layer to said first metallized layer through said third metallized layer.
Claim 18
Dependent Claim
24 words
A method of fabricating a semiconductor device according to claim 12, wherein said first and second metallic members are constituted by the same material.
Claim 19
Dependent Claim
21 words
A method of fabricating a semiconductor device according to claim 13, wherein the material of said metallic members is a solder.
Claim 20
Dependent Claim
38 words
A method of fabricating a semiconductor device according to claim 12, wherein said sealing step is carried out in an equilibrium state between an atmosphere in which said semiconductor chip is present and an atmosphere outside said cap.
Claim 21
Dependent Claim
43 words
A method of fabricating a semiconductor device according to claim 12, wherein said sealing step is carried out while an atmosphere in which said semiconductor chip is present and an atmosphere outside said cap are held at pressures approximately equal to each other.
References Cited (Backward Citations)
US4764804A
Cited
JPS62249429A
Cited
US4831212A
Cited
US4742024A
Cited
US4814295A
Cited
JPS63310139A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-06-14 | 1996-12-14 | 1997-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-14 | 2000-12-14 | 2001-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-14 | 2004-12-14 | 2005-06-15 | $7700.00 | Window Closed / Lapsed |