US5220533A
Expired / Lapsed
US
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Method and apparatus for preventing overerasure in a flash cell
Assignee: Altera Corp
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Filing: 1991-11-06
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Granted: 1993-06-15
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Expires: 2011-11-06
Abstract
Abstract A method and apparatus for erasing Flash EPROM cells that avoids overerasure is provided. A high-impedance device is placed between the drain of the cell and the high-voltage supply used to erase the cell. As soon as the cell enters the onset of depletion and begins to conduct, most of the high voltage is dropped across the high-impedance device, leaving insufficient potential across the cell for Fowler-Nordheim tunneling to continue. The erase process is thus self-limiting. The process can be used on a chain or array of EPROM cells, with erasure stopping when any one of the cells conducts. Bias differences between erase and read modes assure that the cell that first goes into depletion is not in depletion in normal operation.
Inventors
- 👤 John E. Turner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:13
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/34; G11C16/3436; G11C16/3468; G11C16/3477; G11C16/10; G11C16/14; G11C16/16
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
164 words
A method of erasing a programmed Flash cell and stopping erasure of said cell on onset of conduction by said cell, said cell having a gate, a source, a drain and a floating gate from which charge must be removed by placing a high potential difference thereacross to erase the cell, said method comprising: applying ground potential to said gate; applying ground potential to said source; and applying a high positive potential to said drain through a high-impedance device connected to said drain; wherein: said high positive potential causes electrons to flow off said floating gate to said drain and through said high-impedance device, such that when enough electrons have been removed from said floating gate: said cell begins to conduct, and current flows through said high-impedance device and said cell and drops most of said high potential across said high-impedance device, insufficient potential remaining across said floating gate to remove additional electrons, whereby erasure is stopped at onset of conduction by said cell.
Claim 2
Independent Claim
164 words
A method of erasing a programmed Flash cell and stopping erasure of said cell on onset of conduction by said cell, said cell having a gate, a source, a drain and a floating gate from which charge must be removed by placing a high potential difference thereacross to erase the cell, said method comprising: applying ground potential to said gate; applying ground potential to said source; and applying a high positive potential to said drain through a high-impedance device connected to said drain; wherein: said high positive potential causes electrons to flow off said floating gate to said drain and through said high-impedance device, such that when enough electrons have been removed from said floating gate: said cell begins to conduct, and current flows through said high-impedance device and said cell and drops most of said high potential across said high-impedance device, insufficient potential remaining across said floating gate to remove additional electrons, whereby erasure is stopped at onset of conduction by said cell.
Claim 3
Independent Claim
225 words
A method of erasing a chain of Flash cells and stopping erasure of said chain of cells on onset of conduction by any cell in said chain, each of said cells having a gate, a source, a drain and a floating gate from which charge must be removed by placing a high potential difference thereacross to erase the cell, the sources of all cells in said chain being connected in common to a source line and the drains of all cells in said chain being connected in common to a drain line, all of said cells being programmed, said method comprising: applying ground potential to each of said gates; applying ground potential to said source line; and applying a high positive potential to said drain line through a high-impedance device connected to said drain line; wherein: said high positive potential causes electrons to flow off said floating gates to said drain line and through said high-impedance device, such that when enough electrons have been removed from said floating gate of one of said cells: said one of said cells begins to conduct, and current flows through said high-impedance device and said cell and drops most of said high potential across said high-impedance device, insufficient potential remaining across said floating gates to remove additional electrons, whereby erasure is stopped at onset of conduction by said cell.
Claim 4
Independent Claim
225 words
A method of erasing a chain of Flash cells and stopping erasure of said chain of cells on onset of conduction by any cell in said chain, each of said cells having a gate, a source, a drain and a floating gate from which charge must be removed by placing a high potential difference thereacross to erase the cell, the sources of all cells in said chain being connected in common to a source line and the drains of all cells in said chain being connected in common to a drain line, all of said cells being programmed, said method comprising: applying ground potential to each of said gates; applying ground potential to said source line; and applying a high positive potential to said drain line through a high-impedance device connected to said drain line; wherein: said high positive potential causes electrons to flow off said floating gates to said drain line and through said high-impedance device, such that when enough electrons have been removed from said floating gate of one of said cells: said one of said cells begins to conduct, and current flows through said high-impedance device and said cell and drops most of said high potential across said high-impedance device, insufficient potential remaining across said floating gates to remove additional electrons, whereby erasure is stopped at onset of conduction by said cell.
Claim 5
Independent Claim
255 words
A method of erasing an array of Flash cells and stopping erasure of said array of cells on onset of conduction by any cell in said array, each of said cells having a gate, a source, a drain and a floating gate from which charge must be removed by placing a high potential difference thereacross to erase the cell, said cells connected in parallel chains, the sources of all cells in each said chain being connected in common to a respective source line for said chain and the drains of all cells in each said chain being connected in common to a respective drain line for said chain, all of said cells being programmed, said method comprising: connecting together said respective drain lines as a common drain line; applying ground potential to each of said gates; applying ground potential to said source lines; and applying a high positive potential to said common drain line through a high-impedance device connected to said common drain line; wherein: said high positive potential causes electrons to flow off said floating gates to said common drain line and through said high-impedance device, such that when enough electrons have been removed from said floating gate of one of said cells: said one of said cells begins to conduct, and current flows through said high-impedance device and said cell and drops most of said high potential across said high-impedance device, insufficient potential remaining across said floating gates to remove additional electrons, whereby erasure is stopped at onset of conduction by said cell.
Claim 6
Independent Claim
255 words
A method of erasing an array of Flash cells and stopping erasure of said array of cells on onset of conduction by any cell in said array, each of said cells having a gate, a source, a drain and a floating gate from which charge must be removed by placing a high potential difference thereacross to erase the cell, said cells connected in parallel chains, the sources of all cells in each said chain being connected in common to a respective source line for said chain and the drains of all cells in each said chain being connected in common to a respective drain line for said chain, all of said cells being programmed, said method comprising: connecting together said respective drain lines as a common drain line; applying ground potential to each of said gates; applying ground potential to said source lines; and applying a high positive potential to said common drain line through a high-impedance device connected to said common drain line; wherein: said high positive potential causes electrons to flow off said floating gates to said common drain line and through said high-impedance device, such that when enough electrons have been removed from said floating gate of one of said cells: said one of said cells begins to conduct, and current flows through said high-impedance device and said cell and drops most of said high potential across said high-impedance device, insufficient potential remaining across said floating gates to remove additional electrons, whereby erasure is stopped at onset of conduction by said cell.
Claim 7
Dependent Claim
37 words
The method of claim 3 wherein said step of applying ground potential to said source lines comprises: connecting together said respective source lines as a common source line; and applying ground potential to said common source line.
Claim 8
Dependent Claim
174 words
Apparatus for erasing a programmed Flash cell and for stopping erasure of said cell on onset of conduction by said cell, said cell having a gate, a source, a drain and a floating gate from which charge must be removed by placing a high potential difference thereacross to erase the cell, said apparatus comprising: means for applying ground potential to said gate; means for applying ground potential to said source; high-impedance means for attaching to said drain; and means for applying a high positive potential to said high-impedance means connected to said drain; wherein: said high positive potential causes electrons to flow off said floating gate to said drain and through said high-impedance device, such that when enough electrons have been removed from said floating gate: said cell begins to conduct, and current flows through said high-impedance device and said cell and drops most of said high potential across said high-impedance means, insufficient potential remaining across said floating gate to remove additional electrons, whereby erasure is stopped at onset of conduction by said cell.
Claim 9
Dependent Claim
174 words
Apparatus for erasing a programmed Flash cell and for stopping erasure of said cell on onset of conduction by said cell, said cell having a gate, a source, a drain and a floating gate from which charge must be removed by placing a high potential difference thereacross to erase the cell, said apparatus comprising: means for applying ground potential to said gate; means for applying ground potential to said source; high-impedance means for attaching to said drain; and means for applying a high positive potential to said high-impedance means connected to said drain; wherein: said high positive potential causes electrons to flow off said floating gate to said drain and through said high-impedance device, such that when enough electrons have been removed from said floating gate: said cell begins to conduct, and current flows through said high-impedance device and said cell and drops most of said high potential across said high-impedance means, insufficient potential remaining across said floating gate to remove additional electrons, whereby erasure is stopped at onset of conduction by said cell.
Claim 10
Dependent Claim
13 words
The apparatus of claim 5 wherein said high-impedance means comprises a high-resistance resistor.
Claim 11
Dependent Claim
12 words
The apparatus of claim 5 wherein said high-impedance means comprise a transistor.
Claim 12
Dependent Claim
14 words
The apparatus of claim 5 wherein said high-impedance means comprises a capacitive pumped circuit.
Claim 13
Dependent Claim
13 words
The apparatus of claim 8 wherein said capacitive pumped circuit comprises an oscillator.
Claim 14
Dependent Claim
241 words
Apparatus for erasing a chain of Flash cells and for stopping erasure of said chain of cells on onset of conduction by any cell in said chain, each of said cells having a gate, a source, a drain and a floating gate from which charge must be removed by placing a high potential difference thereacross to erase the cell, the sources of all cells in said chain being connected in common to a source line and the drains of all cells in said chain being connected in common to a drain line, all of said cells being programmed, said apparatus comprising: means for applying ground potential to each of said gates; means for applying ground potential to said source line of said chain; high-impedance means for attaching to said drain line; and means for applying a high positive potential to said drain line through high-impedance means connected to said drain line; wherein: said high positive potential causes electrons to flow off said floating gates to said drain line and through said high-impedance device, such that when enough electrons have been removed from said floating gate of one of said cells: said one of said cells begins to conduct, and current flows through said high-impedance device and said cell and drops most of said high potential across said high-impedance device, insufficient potential remaining across said floating gates to remove additional electrons, whereby erasure is stopped at onset of conduction by said cell.
Claim 15
Dependent Claim
241 words
Apparatus for erasing a chain of Flash cells and for stopping erasure of said chain of cells on onset of conduction by any cell in said chain, each of said cells having a gate, a source, a drain and a floating gate from which charge must be removed by placing a high potential difference thereacross to erase the cell, the sources of all cells in said chain being connected in common to a source line and the drains of all cells in said chain being connected in common to a drain line, all of said cells being programmed, said apparatus comprising: means for applying ground potential to each of said gates; means for applying ground potential to said source line of said chain; high-impedance means for attaching to said drain line; and means for applying a high positive potential to said drain line through high-impedance means connected to said drain line; wherein: said high positive potential causes electrons to flow off said floating gates to said drain line and through said high-impedance device, such that when enough electrons have been removed from said floating gate of one of said cells: said one of said cells begins to conduct, and current flows through said high-impedance device and said cell and drops most of said high potential across said high-impedance device, insufficient potential remaining across said floating gates to remove additional electrons, whereby erasure is stopped at onset of conduction by said cell.
Claim 16
Dependent Claim
13 words
The apparatus of claim 10 wherein said high-impedance means comprises a high-resistance resistor.
Claim 17
Dependent Claim
12 words
The apparatus of claim 10 wherein said high-impedance means comprises a transistor.
Claim 18
Dependent Claim
14 words
The apparatus of claim 10 wherein said high-impedance means comprises a capacitive pumped circuit.
Claim 19
Dependent Claim
13 words
The apparatus of claim 13 wherein said capacitive pumped circuit comprises an oscillator.
Claim 20
Dependent Claim
273 words
Apparatus for era sing an array of Flash cells and for stopping erasure of said array of cells on onset of conduction by any cell in said array, each of said cells having a gate, a source, a drain and a floating gate from which charge must be removed by placing a high potential difference thereacross to erase the cell, said cells connected in parallel chains, the sources of all cells in each said chain being connected in common to a respective source line for said chain and the drains of all cells in each said chain being connected in common to a respective drain line for said chain, all of said cells being programmed, said apparatus comprising: means for connecting together said respective drain lines as a common drain line; means for applying ground potential to each of said gates; means for applying ground potential to said source lines; high-impedance means for attaching to said common drain line; and means for applying a high positive potential to said common drain line through said high-impedance means connected to said common drain line; wherein: said high positive potential causes electrons to flow off said floating gates to said common drain line and through said high-impedance device, such that when enough electrons have been removed from said floating gate of one of said cells: said one of said cells begins to conduct, and current flows through said high-impedance device and said cell and drops most of said high potential across said high-impedance device, insufficient potential remaining across said floating gates to remove additional electrons, whereby erasure is stopped at onset of conduction by said cell.
Claim 21
Dependent Claim
273 words
Apparatus for era sing an array of Flash cells and for stopping erasure of said array of cells on onset of conduction by any cell in said array, each of said cells having a gate, a source, a drain and a floating gate from which charge must be removed by placing a high potential difference thereacross to erase the cell, said cells connected in parallel chains, the sources of all cells in each said chain being connected in common to a respective source line for said chain and the drains of all cells in each said chain being connected in common to a respective drain line for said chain, all of said cells being programmed, said apparatus comprising: means for connecting together said respective drain lines as a common drain line; means for applying ground potential to each of said gates; means for applying ground potential to said source lines; high-impedance means for attaching to said common drain line; and means for applying a high positive potential to said common drain line through said high-impedance means connected to said common drain line; wherein: said high positive potential causes electrons to flow off said floating gates to said common drain line and through said high-impedance device, such that when enough electrons have been removed from said floating gate of one of said cells: said one of said cells begins to conduct, and current flows through said high-impedance device and said cell and drops most of said high potential across said high-impedance device, insufficient potential remaining across said floating gates to remove additional electrons, whereby erasure is stopped at onset of conduction by said cell.
Claim 22
Dependent Claim
13 words
The apparatus of claim 15 wherein said high-impedance means comprises a high-resistance resistor.
Claim 23
Dependent Claim
12 words
The apparatus of claim 15 wherein said high-impedance means comprise a transistor.
Claim 24
Dependent Claim
14 words
The apparatus of claim 15 wherein said high-impedance means comprises a capacitive pumped circuit.
Claim 25
Dependent Claim
13 words
The apparatus of claim 18 wherein said capacitive pumped circuit comprises an oscillator.
Claim 26
Dependent Claim
41 words
The apparatus of claim 15 wherein said means for applying ground potential to said source lines comprises: means for connecting together said respective source lines as a common source line; and means for applying ground potential to said common source line.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-06-14 | 1996-12-14 | 1997-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-14 | 2000-12-14 | 2001-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-14 | 2004-12-14 | 2005-06-15 | $7700.00 | Window Closed / Lapsed |