US5235289A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Transmission power amplifier device
Assignee: Panasonic Holdings Corp
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Filing: 1992-07-28
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Granted: 1993-08-10
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Expires: 2012-07-28
Abstract
Abstract Disclosed is a transmission power amplifier device comprising a GaAs power amplifier using a GaAs FET as its amplifier element. In order to compensate the non-linearity of the frequency characteristic of the transmission power amplification efficiency of the GaAs power amplifier with respect to individual amplified signal transmission channels, gate voltage information for each of the channels is stored beforehand in a memory, and a gate voltage obtained by adding a fixed voltage to an analog voltage generated on the basis of the gate voltage information read out from the memory is applied to the gate of the GaAs FET so as to flatten the frequency characteristic of the transmission power amplification efficiency.
Inventors
- 👤 Kouichi Kunitomo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:23
CPC Classifications
H; H03; H03F; H03F1/00; H03F1/02; H03F1/0205; H03F1/0261; H03F1/32; H03F1/3205
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
108 words
A transmission power amplifier device comprising: a power amplifier including a GaAs FET; means for storing the relation between predetermined information of the gate voltage of said GaAs FET and the transmission power amplification efficiency for each of individual channels; means for reading out from said storage means the predetermined gate voltage information corresponding to each of said channels; means for generating a DC voltage on the basis of the gate voltage information read out from said storage means; means for generating a fixed voltage; and means for adding said fixed voltage to said DC voltage and applying the sum voltage to the gate of said GaAs FET.
Claim 2
Dependent Claim
108 words
A transmission power amplifier device comprising: a power amplifier including a GaAs FET; means for storing the relation between predetermined information of the gate voltage of said GaAs FET and the transmission power amplification efficiency for each of individual channels; means for reading out from said storage means the predetermined gate voltage information corresponding to each of said channels; means for generating a DC voltage on the basis of the gate voltage information read out from said storage means; means for generating a fixed voltage; and means for adding said fixed voltage to said DC voltage and applying the sum voltage to the gate of said GaAs FET.
Claim 3
Dependent Claim
35 words
A transmission power amplifier device according to claim 1, wherein said means for reading out said gate voltage information from said storage means is a CPU, and said storage means is an externally mounted memory.
Claim 4
Dependent Claim
16 words
A transmission power amplifier device according to claim 2, wherein said memory is a look-up table.
Claim 5
Dependent Claim
18 words
A transmission power amplifier device according to claim 2, wherein said storage means is built in said CPU.
Claim 6
Dependent Claim
35 words
A transmission power amplifier device according to claim 1, wherein said DC voltage generating means is a D/A converter which converts the gate voltage information read out from said storage means into an analog voltage.
References Cited (Backward Citations)
US5029298A
Cited
JPH02182007A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-09 | 1997-02-08 | 1997-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-09 | 2001-02-08 | 2001-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-09 | 2005-02-08 | 2005-08-10 | $7700.00 | Window Closed / Lapsed |