US5237188A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with nitrided gate insulating film
Assignee: Toshiba Corp
•
Filing: 1991-11-27
•
Granted: 1993-08-17
•
Expires: 2011-11-27
Abstract
Abstract A semiconductor device formed on a silicon substrate consisting of the steps of producing a silicon oxide film on the silicon substrate, producing a thin silicon nitride film on the silicon oxide film, thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas, producing a conductive film on the silicon nitride film nitrided in the atmosphere of the nitrogenous gas, producing a gate region from the silicon oxide film, the silicon nitride film, and the conductive film, a channel region being positioned under the gate region in the silicon substrate, producing a source region in the silicon substrate adjacent to one side of the channel region, producing a drain region in the silicon substrate adjacent to another side of the channel region, and producing wiring regions on the source region, the drain region, and the gate region.
Inventors
- 👤 Hiroshi Iwai
- 👤 Toyota Morimoto
- 👤 Hisayo S. Momose
- 👤 Kikuo Yamabe
- 👤 Yoshio Ozawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:41
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0181; H10D84/02; H10D84/03; H10D84/038; H10D64/01346
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
189 words
A semiconductor device fabricated on a silicon substrate, comprising: a source region which is produced in one upper region of the silicon substrate; a drain region for receiving a drain current from the source region through a channel region, the drain region being produced in another upper region of the silicon substrate; a silicon oxide film for insulating a gate charge from the channel region of the silicon substrate, the silicon oxide film being positioned on the channel region; a thin silicon nitride film positioned on the silicon oxide film for insulating the gate charge from the channel region of the silicon substrate in cooperation with the silicon oxide film, the thin silicon nitride film being formed by nitriding a silicon nitride layer arranged on the silicon oxide film by applying a ramp heating process in an atmosphere of nitrogenous gas; a gate electrode for accumulating the gate charge, the gate electrode being positioned on the thin silicon nitride film; and wiring regions for applying the gate charge to the gate electrode and the drain current to the source region and receiving the drain current from the drain region.
Claim 2
Dependent Claim
189 words
A semiconductor device fabricated on a silicon substrate, comprising: a source region which is produced in one upper region of the silicon substrate; a drain region for receiving a drain current from the source region through a channel region, the drain region being produced in another upper region of the silicon substrate; a silicon oxide film for insulating a gate charge from the channel region of the silicon substrate, the silicon oxide film being positioned on the channel region; a thin silicon nitride film positioned on the silicon oxide film for insulating the gate charge from the channel region of the silicon substrate in cooperation with the silicon oxide film, the thin silicon nitride film being formed by nitriding a silicon nitride layer arranged on the silicon oxide film by applying a ramp heating process in an atmosphere of nitrogenous gas; a gate electrode for accumulating the gate charge, the gate electrode being positioned on the thin silicon nitride film; and wiring regions for applying the gate charge to the gate electrode and the drain current to the source region and receiving the drain current from the drain region.
Claim 3
Dependent Claim
170 words
A semiconductor device fabricated on a silicon substrate, comprising: a source region which is produced in one upper region of the silicon substrate; a drain region for receiving a drain current from the source region through a channel region, the drain region being produced in another upper region of the silicon substrate; a silicon oxide film positioned on the channel region for insulating gate charge from the channel region of the silicon substrate, the film being nitrided by a rapid thermal nitridation method in an atmosphere of nitrogenous gas; an interface region in which the nitrogen concentration is between 0.2 atom % and 1.0 atom %, the interface region being formed in an interface between the silicon oxide film and the silicon substrate; a gate electrode for accumulating the gate charge, the gate electrode being positioned on the silicon oxide film; and wiring regions for applying the gate charge to the gate electrode and the drain current to the source region and receiving the drain current from the drain region.
Claim 4
Dependent Claim
170 words
A semiconductor device fabricated on a silicon substrate, comprising: a source region which is produced in one upper region of the silicon substrate; a drain region for receiving a drain current from the source region through a channel region, the drain region being produced in another upper region of the silicon substrate; a silicon oxide film positioned on the channel region for insulating gate charge from the channel region of the silicon substrate, the film being nitrided by a rapid thermal nitridation method in an atmosphere of nitrogenous gas; an interface region in which the nitrogen concentration is between 0.2 atom % and 1.0 atom %, the interface region being formed in an interface between the silicon oxide film and the silicon substrate; a gate electrode for accumulating the gate charge, the gate electrode being positioned on the silicon oxide film; and wiring regions for applying the gate charge to the gate electrode and the drain current to the source region and receiving the drain current from the drain region.
Claim 5
Dependent Claim
88 words
A semiconductor device fabricated on a silicon substrate in which a channel region is provided, comprising: a silicon oxide film positioned on the channel region for insulating gate charge from the channel region of the silicon substrate, the film being nitrided by a rapid thermal nitridation method in an atmosphere of nitrogenous gas; and an interface region in which the nitrogen concentration is between 0.2 atom % and 1.0 atom %, the interface region being formed in an interface between the silicon oxide film and the silicon substrate.
Claim 6
Dependent Claim
88 words
A semiconductor device fabricated on a silicon substrate in which a channel region is provided, comprising: a silicon oxide film positioned on the channel region for insulating gate charge from the channel region of the silicon substrate, the film being nitrided by a rapid thermal nitridation method in an atmosphere of nitrogenous gas; and an interface region in which the nitrogen concentration is between 0.2 atom % and 1.0 atom %, the interface region being formed in an interface between the silicon oxide film and the silicon substrate.
Claim 7
Dependent Claim
18 words
A semiconductor device according to claim 3 in which the semiconductor device is applied to a MOSFET transistor.
Claim 8
Dependent Claim
18 words
A semiconductor device according to claim 3 in which the semiconductor device is applied to a CMOSFET transistor.
Claim 9
Dependent Claim
17 words
A semiconductor device according to claim 3 in which the semiconductor device is applied to an EPROM.
Claim 10
Dependent Claim
17 words
A semiconductor device according to claim 3 in which the semiconductor device is applied to an EEPROM.
Claim 11
Dependent Claim
18 words
A semiconductor device according to claim 3 in which the semiconductor device is applied to a MOS capacitor.
Claim 12
Dependent Claim
25 words
A semiconductor device according to claim 1 in which the nitrogenous gas used to form the thin silicon nitride film is ammonia (NH 3 ).
Claim 13
Dependent Claim
24 words
A semiconductor device according to claim 1 in which the nitrogenous gas used to form the thin silicon nitride film is NF 3 gas.
Claim 14
Dependent Claim
25 words
A semiconductor device according to claim 1 in which the nitrogenous gas used to form the thin silicon nitride film is N 2 O gas.
References Cited (Backward Citations)
US4623912A
Cited
US4962065A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-16 | 1997-02-15 | 1997-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-16 | 2001-02-15 | 2001-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-16 | 2005-02-15 | 2005-08-17 | $7700.00 | Window Closed / Lapsed |