US5244818A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits
Assignee: Georgia Tech Research Corp
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Filing: 1992-04-08
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Granted: 1993-09-14
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Expires: 2012-04-08
Abstract
Abstract Various novel processes permit integrating thin film semiconductor materials and devices using lift off, alignment, and deposition onto a host substrate. As a result, three dimensional integrated circuits can be constructed. Three dimensional communication in an integrated circuit can be implemented via electromagnetic communication between emitters and detectors fabricated via the novel processes. Integrated circuit layers are transparent to the electromagnetic signals propagated from the emitter and received by the detector. Furthermore, arrays of optical detectors can be implemented to perform image processing with tremendous speed. Processing circuitry can be situated directly below the optical detectors to process in massive parallel signals from individual optical detectors.
Inventors
- 👤 Nan M. Jokerst
- 👤 Martin A. Brooke
- 👤 Mark G. Allen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 03:22
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H10; H10F; H10F39/00; H10F39/011; H10F39/026; H10F39/028; H10F39/10; H10F39/12; H10F39/18; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10P; H10P54/00; H01S5/02; H01S5/0206; H01S5/0215; H01S5/0217; H10P72/00; H10P72/70; H10P72/74; H10P72/7428; H10P72/7434; Y; Y10; Y10S; Y10S117/00; Y10S117/915; Y10S148/00; Y10S148/135
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
117 words
A process for lift-off of thin film epitaxial materials from a growth substrate and deposition of the epitaxial materials onto a host substrate, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on said growth substrate; patterning said epitaxial layer to form a device layer having all exposed sides; coating said all exposed sides of said patterned device layer with a carrier layer; etching away said sacrificial layer to release the combination of said patterned device layer and said carrier layer from said growth substrate; positioning said patterned device layer against a transfer medium; removing said carrier layer; and selectively depositing said patterned device layer onto said host substrate from said transfer medium.
Claim 2
Dependent Claim
117 words
A process for lift-off of thin film epitaxial materials from a growth substrate and deposition of the epitaxial materials onto a host substrate, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on said growth substrate; patterning said epitaxial layer to form a device layer having all exposed sides; coating said all exposed sides of said patterned device layer with a carrier layer; etching away said sacrificial layer to release the combination of said patterned device layer and said carrier layer from said growth substrate; positioning said patterned device layer against a transfer medium; removing said carrier layer; and selectively depositing said patterned device layer onto said host substrate from said transfer medium.
Claim 3
Dependent Claim
24 words
The process of claim 1, further comprising the step of selectively aligning said patterned device layer with a particular location on said host substrate.
Claim 4
Dependent Claim
20 words
The process of claim 1, wherein said epitaxial layer is a thin film semiconductor less than 20 micrometers in thickness.
Claim 5
Dependent Claim
11 words
The process of claim 1, wherein said carrier layer is transparent.
Claim 6
Dependent Claim
13 words
The process of claim 1, wherein said carrier layer is a polymeric layer.
Claim 7
Dependent Claim
23 words
The process of claim 1, wherein said transfer medium comprises a diaphragm having a rigid ring over which a thin material is suspended.
Claim 8
Dependent Claim
25 words
The process of claim 1, wherein said epitaxial layer is a In x Ga 1-x As y P 1-y semiconductor layer, where 0<x<1 and 0<y<1.
Claim 9
Dependent Claim
49 words
The process of claim 1, wherein said epitaxial layer is a In x Ga 1-x As y P 1-y semiconductor layer, where 0<x<1 and 0<y<1, and further comprising the step of selectively depositing said semiconductor layer onto a metal layer within said host substrate, thereby creating an optical detector.
Claim 10
Dependent Claim
30 words
The process of claim 1, further comprising the step of forming said patterned device layer to either emit or detect, or both emit and detect, electromagnetic signals encoded with information.
Claim 11
Dependent Claim
29 words
The process of claim 1, further comprising the step of depositing a metal layer on said epitaxial layer prior to coating said patterned device layer with said carrier layer.
Claim 12
Dependent Claim
29 words
The process of claim 1, further comprising the step of depositing a dielectrical layer on said epitaxial layer prior to coating said patterned device layer with said carrier layer.
Claim 13
Dependent Claim
23 words
The process of claim 1, further comprising the step of separating said patterned device layer from said transfer medium via an etching process.
Claim 14
Dependent Claim
105 words
A process for separation of thin film epitaxial materials from a growth substrate and deposition of the device materials onto a host substrate, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; patterning said epitaxial layer to form a device layer having all exposed sides; coating said all exposed sides of said patterned device layer with a carrier layer; etching away said growth substrate; etching away said sacrificial layer; positioning said patterned device layer against a transfer medium; removing said carrier layer; and selectively depositing said patterned device layer onto said host substrate from said transfer medium.
Claim 15
Dependent Claim
105 words
A process for separation of thin film epitaxial materials from a growth substrate and deposition of the device materials onto a host substrate, comprising the steps of: depositing an epitaxial layer on a sacrificial layer situated on a growth substrate; patterning said epitaxial layer to form a device layer having all exposed sides; coating said all exposed sides of said patterned device layer with a carrier layer; etching away said growth substrate; etching away said sacrificial layer; positioning said patterned device layer against a transfer medium; removing said carrier layer; and selectively depositing said patterned device layer onto said host substrate from said transfer medium.
Claim 16
Dependent Claim
24 words
The process of claim 13, further comprising the step of selectively aligning said patterned device layer with a particular location on said host substrate.
Claim 17
Dependent Claim
20 words
The process of claim 13, wherein said epitaxial layer is a thin film semiconductor less than 20 micrometers in thickness.
Claim 18
Dependent Claim
11 words
The process of claim 13, wherein said carrier layer is transparent.
Claim 19
Dependent Claim
13 words
The process of claim 13, wherein said carrier layer is a polymeric layer.
Claim 20
Dependent Claim
23 words
The process of claim 13, wherein said transfer medium comprises a diaphragm having a rigid ring over which a thin material is suspended.
Claim 21
Dependent Claim
25 words
The process of claim 13, wherein said epitaxial layer is a In x Ga 1-x As y P 1-y semiconductor layer, where 0<x<1 and 0<y<1.
Claim 22
Dependent Claim
49 words
The process of claim 13, wherein said epitaxial layer is a In x Ga 1-x As y P 1-y semiconductor layer, where 0<x<1 and 0<y<1, and further comprising the step of selectively depositing said semiconductor layer onto a metal layer within said host substrate, thereby creating an optical detector.
Claim 23
Dependent Claim
30 words
The process of claim 13, further comprising the step of forming said patterned device layer to either emit or detect, or both emit and detect, electromagnetic signals encoded with information.
Claim 24
Dependent Claim
29 words
The process of claim 13, further comprising the step of depositing a metal layer on said epitaxial layer prior to coating said patterned device layer with said carrier layer.
Claim 25
Dependent Claim
29 words
The process of claim 13, further comprising the step of depositing a dielectric layer on said epitaxial layer prior to coating said patterned device layer with said carrier layer.
Claim 26
Dependent Claim
23 words
The process of claim 13, further comprising the step of separating said patterned device layer from said transfer medium via an etching process.
Claim 27
Dependent Claim
22 words
The process of claim 20, further comprising the step of connecting said metal to an electronic processing circuitry within said host substrate.
Claim 28
Dependent Claim
24 words
The process of claim 20, further comprising the step of disposing said semiconductor layer external to and in communication with a remote integrated circuit.
Claim 29
Dependent Claim
20 words
The process of claim 20, further comprising the step of interposing said optical detector within layers of an integrated circuit.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-13 | 1997-03-15 | 1997-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-13 | 2001-03-15 | 2001-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-13 | 2005-03-15 | 2005-09-14 | $7700.00 | Window Closed / Lapsed |