US5244841A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing
Assignee: Abbott Laboratories
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Filing: 1991-12-10
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Granted: 1993-09-14
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Expires: 2011-12-10
Abstract
Abstract A planarizing process is disclosed for planarizing an integrated circuit structure using a low melting inorganic planarizing material which comprises flowing while depositing a low melting inorganic planarizing layer such as a boron oxide glass over a layer if insulating material such as an oxide of silicon and then dry etching the low melting inorganic planarizing layer to planarize the structure. The method eliminates the need for separate coating, drying, and curing steps associated with the application of organic-based planarizing layers usually carried out outside of a vacuum apparatus. In a preferred embodiment, the deposition steps and the etching step are carried out without removing the integrated circuit structure from the vacuum apparatus. An additional etching step may be carried out after depositing the insulating layer and prior to deposition of the planarizing layer to remove any voids formed in the insulating layer.
Inventors
- 👤 Jeffrey Marks
- 👤 Kam S. Law
- 👤 David N. Wang
- 👤 Dan Maydan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:20
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/68; H10P95/00; H10P95/06; H10P95/062; H10P95/064; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; Y; Y10; Y10S; Y10S148/00; Y10S148/133
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
96 words
A process for planarizing an integrated circuit structure in an apparatus which comprises: (a) depositing a first layer of an insulating material over said integrated circuit structure in a chemical vapor deposition zone in said apparatus; (b) depositing over said insulating layer a flowable inorganic planarizing layer at a temperature high enough to permit said inorganic planarizing material to flow as it is deposited; and (c) dry etching said flowable inorganic planarizing layer in an etching zone in said apparatus to planarize said structure and until substantially all of said inorganic planarizing layer has been removed.
Claim 2
Dependent Claim
96 words
A process for planarizing an integrated circuit structure in an apparatus which comprises: (a) depositing a first layer of an insulating material over said integrated circuit structure in a chemical vapor deposition zone in said apparatus; (b) depositing over said insulating layer a flowable inorganic planarizing layer at a temperature high enough to permit said inorganic planarizing material to flow as it is deposited; and (c) dry etching said flowable inorganic planarizing layer in an etching zone in said apparatus to planarize said structure and until substantially all of said inorganic planarizing layer has been removed.
Claim 3
Dependent Claim
25 words
A process according to claim 1 wherein said inorganic planarizing layer is capable of being etched at about the same rate as said insulating layer.
Claim 4
Dependent Claim
14 words
A process according to claim 1 wherein said inorganic planarizing layer is a glass.
Claim 5
Dependent Claim
13 words
A process according to claim 1 wherein said insulating material is silicon oxide.
Claim 6
Dependent Claim
36 words
A process according to claim 1 wherein said integrated circuit structure having said insulating layer and said planarizing layer thereon is transferred to an etching zone without exposing said integrated circuit structure to the ambient atmosphere.
Claim 7
Dependent Claim
39 words
A process according to claim 1 wherein said integrated circuit structure having said insulating layer and said planarizing layer thereon is transferred to an etching zone in said apparatus without exposing said integrated circuit structure to the ambient atmosphere.
Claim 8
Dependent Claim
27 words
A process according to claim 1 wherein both said insulating layer and said planarizing layer are deposited sequentially in a chemical vapor deposition zone of said apparatus.
Claim 9
Dependent Claim
61 words
A process according to claim 1 wherein both said insulating layer and said planarizing layer are deposited sequentially in a chemical vapor deposition zone of said apparatus; and said integrated circuit structure having said insulating layer and said planarizing layer thereon is thereafter transferred to an etching zone in said apparatus without exposing said integrated circuit structure to the ambient atmosphere.
Claim 10
Dependent Claim
162 words
A process for planarizing an integrated circuit structure in an apparatus which comprises: (a) depositing a first layer of a silicon oxide insulating materials over said integrated circuit structure in a chemical vapor deposition zone in said apparatus; (b) then depositing over said silicon oxide insulating layer a flowable inorganic glass planarizing layer in a chemical vapor deposition zone in said apparatus at a temperature high enough to permit said inorganic planarizing material to flow as it is deposited, said flowable inorganic glass planarizing layer being capable of being etched at about the same rate as said silicon oxide insulating layer; (c) transferring said integrated circuit structure having said insulating layer and said planarizing layer thereon to an etching zone without exposing said integrated circuit structure to the ambient atmosphere; and (d) dry etching said flowable inorganic planarizing layer in an etching zone in said apparatus to planarize said structure and until substantially all of said inorganic planarizing layer has been removed.
Claim 11
Dependent Claim
162 words
A process for planarizing an integrated circuit structure in an apparatus which comprises: (a) depositing a first layer of a silicon oxide insulating materials over said integrated circuit structure in a chemical vapor deposition zone in said apparatus; (b) then depositing over said silicon oxide insulating layer a flowable inorganic glass planarizing layer in a chemical vapor deposition zone in said apparatus at a temperature high enough to permit said inorganic planarizing material to flow as it is deposited, said flowable inorganic glass planarizing layer being capable of being etched at about the same rate as said silicon oxide insulating layer; (c) transferring said integrated circuit structure having said insulating layer and said planarizing layer thereon to an etching zone without exposing said integrated circuit structure to the ambient atmosphere; and (d) dry etching said flowable inorganic planarizing layer in an etching zone in said apparatus to planarize said structure and until substantially all of said inorganic planarizing layer has been removed.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-13 | 1997-03-15 | 1997-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-13 | 2001-03-15 | 2001-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-13 | 2005-03-15 | 2005-09-14 | $7700.00 | Window Closed / Lapsed |