US5260599A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Conductive clearing frame for a semiconductor component
Assignee: Siemens AG
•
Filing: 1990-11-13
•
Granted: 1993-11-09
•
Expires: 2010-11-13
Abstract
Abstract A clearing frame for a semiconductor component is provided to enable a sufficient positioning of a particle beam. The clearing frame has a higher electrical conductivity than the environment thereof. The clearing frame also enables the determination of the layer resistance of the implantation via the high-frequency loss resistance measurement free from contact and destruction. The clearing frame can be placed at a fixed external DC potential, for example source or drain potential and therefore side gating effects can be avoided.
Inventors
- 👤 Frederik Ponse
- 👤 Gabrielle Belle
- 👤 Erwin Knapek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:30
CPC Classifications
H; H10; H10W; H10W46/00; H10P; H10P52/00; H10W46/101
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
82 words
A semiconductor component comprising: a semiconductor wafer of first electrical conductivity; an active component region integrated into said semiconductor wafer containing a plurality of elements of said semiconductor component; and a non-metallized clearing frame surrounding said active region and electrically connected to at least one of said elements, said clearing frame consisting of a doped region in said semiconductor wafer having a second electrical conductivity which is higher than said first electrical conductivity, said doped region and said active region being non-overlapping.
Claim 2
Dependent Claim
82 words
A semiconductor component comprising: a semiconductor wafer of first electrical conductivity; an active component region integrated into said semiconductor wafer containing a plurality of elements of said semiconductor component; and a non-metallized clearing frame surrounding said active region and electrically connected to at least one of said elements, said clearing frame consisting of a doped region in said semiconductor wafer having a second electrical conductivity which is higher than said first electrical conductivity, said doped region and said active region being non-overlapping.
Claim 3
Dependent Claim
25 words
The semiconductor component of claim 1, wherein: said clearing frame comprises a layer concentration of free charge carriers greater than 10 10 cm -2 .
Claim 4
Dependent Claim
25 words
The semiconductor component of claim 1, wherein: said clearing frame comprises a layer concentration of free charge carriers greater than 10 11 cm -2 .
Claim 5
Dependent Claim
25 words
The semiconductor component of claim 1, wherein: said clearing frame comprises a layer concentration of free charge carriers greater than 10 12 cm -2 .
Claim 6
Dependent Claim
25 words
The semiconductor component of claim 1, wherein: said clearing frame comprises a layer concentration of free charge carriers greater than 10 14 cm -2 .
Claim 7
Dependent Claim
25 words
The semiconductor component of claim 1, wherein: said plurality of elements includes a source zone of a field-effect transistor electrically connected to said clearing frame.
Claim 8
Dependent Claim
25 words
The semiconductor component of claim 1, wherein: said plurality of elements includes a drain zone of a field-effect transistor electrically connected to said clearing frame.
Claim 9
Dependent Claim
41 words
The semiconductor component of claim 1, and further comprising: an alignment mark on a surface of said semiconductor wafer on which said active region is disposed for alignment of a particle beam, said alignment mark electrically connected to said clearing frame.
Claim 10
Dependent Claim
102 words
A semiconductor component comprising: a semiconductor wafer of a first electrical conductivity; an active component region integrated into said semiconductor wafer containing a plurality of elements of said semiconductor component; and a non-metallized ion-implanted clearing frame surrounding said active region and electrically connected to at least one of said elements, said clearing frame consisting of a doped region in said semiconductor wafer having a concentration of free charge carriers greater than 10 10 cm -2 , said doped region having a second electrical conductivity which is higher than said first electrical conductivity, and said doped region and said active region being non-overlapping.
Claim 11
Dependent Claim
102 words
A semiconductor component comprising: a semiconductor wafer of a first electrical conductivity; an active component region integrated into said semiconductor wafer containing a plurality of elements of said semiconductor component; and a non-metallized ion-implanted clearing frame surrounding said active region and electrically connected to at least one of said elements, said clearing frame consisting of a doped region in said semiconductor wafer having a concentration of free charge carriers greater than 10 10 cm -2 , said doped region having a second electrical conductivity which is higher than said first electrical conductivity, and said doped region and said active region being non-overlapping.
References Cited (Backward Citations)
US3772576A
Cited
US4109029A
Cited
US4364078A
Cited
US4377030A
Cited
GB2130788A
Cited
US4656055A
Cited
US5031021A
Cited
US4835592A
Cited
US5051807A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-08 | 1997-05-10 | 1997-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-08 | 2001-05-10 | 2001-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-08 | 2005-05-10 | 2005-11-09 | $7700.00 | Window Closed / Lapsed |