US5266501A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a solid state image sensing device using transparent thermosetting resin layers
Assignee: Toshiba Corp
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Filing: 1992-05-06
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Granted: 1993-11-30
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Expires: 2012-05-06
Abstract
Abstract A method of manufacturing a solid state image sensing device comprising the steps of: forming and maintaining a color filter layer, a lens layer and/or a light reflection preventing layer via a transparent thermosetting resin layer, on a semiconductor substrate; forming a mask layer of a photosetting resin to expose an electrode on the semiconductor substrate surface after the layer forming and maintaining step; and exposing the electrode surface by selectively removing the transparent thermosetting resin layers by use of the mask layer.
Inventors
- 👤 Takehiko Imai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 10:57
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/011; H10F39/024; H10F39/80; H10F39/806; H10F39/8063; H10F77/00; H10F77/30; H10F77/306; H10F77/331; H10F77/40; H10F77/413
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
174 words
A method of manufacturing a solid state image sensing device, comprising the steps of: forming a photosensitive portion and a CCD portion on a semiconductor substrate surface; forming an electrode on the semiconductor substrate surface; forming a first transparent thermosetting resin layer all over the surface and heating the formed first resin layer; forming a light reflection preventing layer away from said photosensitive portion on the first transparent thermosetting resin layer; forming a second transparent thermosetting resin layer all over the surface and heating the formed second resin layer; selectively forming a lens layer over the photosensitive portion on the second transparent thermosetting resin layer; forming a third transparent thermosetting resin layer all over the surface thereof and heating the formed third resin layer; forming a photosensitive resin layer on the surface thereof, exposing the formed resin layer with a pattern for exposing a surface of said electrode, and forming a mask layer by development; and exposing the electrode surface by selectively removing all the transparent thermosetting resin layers with the formed mask layer.
Claim 2
Independent Claim
174 words
A method of manufacturing a solid state image sensing device, comprising the steps of: forming a photosensitive portion and a CCD portion on a semiconductor substrate surface; forming an electrode on the semiconductor substrate surface; forming a first transparent thermosetting resin layer all over the surface and heating the formed first resin layer; forming a light reflection preventing layer away from said photosensitive portion on the first transparent thermosetting resin layer; forming a second transparent thermosetting resin layer all over the surface and heating the formed second resin layer; selectively forming a lens layer over the photosensitive portion on the second transparent thermosetting resin layer; forming a third transparent thermosetting resin layer all over the surface thereof and heating the formed third resin layer; forming a photosensitive resin layer on the surface thereof, exposing the formed resin layer with a pattern for exposing a surface of said electrode, and forming a mask layer by development; and exposing the electrode surface by selectively removing all the transparent thermosetting resin layers with the formed mask layer.
Claim 3
Independent Claim
179 words
A method of manufacturing a solid state image sensing device, comprising the steps of: forming a photosensitive portion and a CCD portion on a semiconductor substrate surface; forming an electrode on the semiconductor substrate surface; forming a first transparent thermosetting resin layer all over the surface thereof and heating the formed first resin layer; forming second transparent thermosetting resin layers above said photosensitive portion on the formed first transparent thermosetting resin layer; forming a third transparent thermosetting resin layer on the second transparent thermosetting resin layer and heating the formed third resin layer; selectively forming a condenser lens layer over the photosensitive portion on the third transparent thermosetting resin layer; forming a fourth transparent thermosetting resin layer all over the surface thereof and heating the formed fourth resin layer; forming a photosensitive resin layer on the surface thereof, exposing the formed resin layer with a pattern for exposing a surface of said electrode, and forming a mask layer by development; and exposing the electrode surface by selectively removing all the transparent thermosetting resin layers with the formed mask layer.
Claim 4
Independent Claim
179 words
A method of manufacturing a solid state image sensing device, comprising the steps of: forming a photosensitive portion and a CCD portion on a semiconductor substrate surface; forming an electrode on the semiconductor substrate surface; forming a first transparent thermosetting resin layer all over the surface thereof and heating the formed first resin layer; forming second transparent thermosetting resin layers above said photosensitive portion on the formed first transparent thermosetting resin layer; forming a third transparent thermosetting resin layer on the second transparent thermosetting resin layer and heating the formed third resin layer; selectively forming a condenser lens layer over the photosensitive portion on the third transparent thermosetting resin layer; forming a fourth transparent thermosetting resin layer all over the surface thereof and heating the formed fourth resin layer; forming a photosensitive resin layer on the surface thereof, exposing the formed resin layer with a pattern for exposing a surface of said electrode, and forming a mask layer by development; and exposing the electrode surface by selectively removing all the transparent thermosetting resin layers with the formed mask layer.
Claim 5
Independent Claim
205 words
A method of manufacturing a solid state image sensing device, comprising the steps of: forming a photosensitive portion and a CCD portion on a semiconductor substrate surface; forming an electrode on the semiconductor substrate surface; forming a first transparent thermosetting resin layer all over the surface thereof and heating the formed first resin layer; forming second transparent thermosetting resin layers above said photosensitive portion on the formed first transparent thermosetting resin layer by sandwiching one of a plurality of color filter layers between two of the formed second resin layers, respectively and by heating the formed second resin layers, respectively; forming a third transparent thermosetting resin layer on the uppermost color filter layer and heating the formed third resin layer; forming a condenser lens layer over the photosensitive portion on the third transparent thermosetting resin layer; forming a fourth transparent thermosetting resin layer all over the surface thereof and heating the formed fourth resin layer; forming a photosensitive resin layer on the surface thereof, exposing the formed resin layer with a pattern for exposing a surface of said electrode, and forming a mask layer by development; and exposing the electrode surface by selectively removing all the transparent thermosetting resin layers with the formed mask layer.
Claim 6
Independent Claim
205 words
A method of manufacturing a solid state image sensing device, comprising the steps of: forming a photosensitive portion and a CCD portion on a semiconductor substrate surface; forming an electrode on the semiconductor substrate surface; forming a first transparent thermosetting resin layer all over the surface thereof and heating the formed first resin layer; forming second transparent thermosetting resin layers above said photosensitive portion on the formed first transparent thermosetting resin layer by sandwiching one of a plurality of color filter layers between two of the formed second resin layers, respectively and by heating the formed second resin layers, respectively; forming a third transparent thermosetting resin layer on the uppermost color filter layer and heating the formed third resin layer; forming a condenser lens layer over the photosensitive portion on the third transparent thermosetting resin layer; forming a fourth transparent thermosetting resin layer all over the surface thereof and heating the formed fourth resin layer; forming a photosensitive resin layer on the surface thereof, exposing the formed resin layer with a pattern for exposing a surface of said electrode, and forming a mask layer by development; and exposing the electrode surface by selectively removing all the transparent thermosetting resin layers with the formed mask layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-29 | 1997-05-31 | 1997-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-29 | 2001-05-31 | 2001-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-29 | 2005-05-31 | 2005-11-30 | $7700.00 | Window Closed / Lapsed |