US5266832A
Expired / Lapsed
US
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Semiconductor apparatus and method for producing the same
Assignee: Toyota Industries Corp
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Filing: 1992-02-06
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Granted: 1993-11-30
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Expires: 2012-02-06
Abstract
Abstract In a semiconductor apparatus and method for producing the same where an upper surface of a semiconductor chip having a thick film electrode is coated with a passivation film, the semiconductor chip being molded with a resin mold such as a power SIT, a conductive film made of a doped polysilicon, a metal material, or the like and which has a thickness of for example 3000 angstroms or more is circumferentially disposed from a bottom circumference of the thick film electrode to a part of region between a field oxide film and a passivation film so as to effectively prevent cracks in the passivation film caused by a cyclic temperature test from extending into the field oxide film.
Inventors
- 👤 Noriyuki Yamamoto
- 👤 Yuri Otobe
- 👤 Takanori Okabe
- 👤 Minoru Kato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 17:51
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D30/00; H10D30/202; H10D64/00; H10D64/01; H10D64/011
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
99 words
A semiconductor apparatus having a semiconductor chip, which is molded with a resin mold said semiconductor chip comprising: a field oxide film, a semiconductor region exposed to an opening portion of said field oxide film, a thick film electrode disposed on the upper surface of said semiconductor region, and a passivation film disposed on a surface including said field oxide film and said thick film electrode, wherein a conductive film of a predetermined thickness is circumferentially disposed from a bottom circumference portion of said thick film electrode to a region between said field oxide film and said passivation film.
Claim 2
Dependent Claim
99 words
A semiconductor apparatus having a semiconductor chip, which is molded with a resin mold said semiconductor chip comprising: a field oxide film, a semiconductor region exposed to an opening portion of said field oxide film, a thick film electrode disposed on the upper surface of said semiconductor region, and a passivation film disposed on a surface including said field oxide film and said thick film electrode, wherein a conductive film of a predetermined thickness is circumferentially disposed from a bottom circumference portion of said thick film electrode to a region between said field oxide film and said passivation film.
Claim 3
Dependent Claim
18 words
The semiconductor apparatus as set forth in claim 1, wherein said conductive film is made of doped polysilicon.
Claim 4
Dependent Claim
19 words
The semiconductor apparatus as set forth in claim 1, wherein said conductive film is made of a metal material.
Claim 5
Dependent Claim
23 words
The semiconductor apparatus as set forth in claim 1, wherein the thickness of said conductive film is 3000 angstroms or exceeds 3000 angstroms.
Claim 6
Dependent Claim
57 words
The semiconductor apparatus as set forth in claim 1, wherein said thick film electrode is a gate electrode and said semiconductor chip further comprises an EQR electrode, and wherein said gate electrode and said EQR electrode have respective extensions from a bottom circumference, each of which is in the range of from ten micrometers to thirty micrometers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-29 | 1997-05-31 | 1997-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-29 | 2001-05-31 | 2001-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-29 | 2005-05-31 | 2005-11-30 | $7700.00 | Window Closed / Lapsed |