Method for fabrication of semiconductor device utilizing ion implantation to eliminate defects

Claim 1

A method for fabrication of a semiconductor device utilizing ion implantation, comprising the steps of: forming a mask pattern covering a monocrystal semiconductor region in which an emitter of a vertical bipolar element is formed; implanting ions of high concentration into said semiconductor region for providing an external base, using said mask pattern as a mask, wherein said ion implantation is carried out at a considerably inclined implantation angle of at least 20 degrees when measured from a vertical direction relative to the surface of the substrate to form in said semiconductor region an amorphous region a) having a substantially inverse trapezoidal vertical cross section and b) having an end which extends into an area just below an edge of said mask; and recrystallizing said amorphous region by heat treatment.

Claim 2

A method for fabrication of a semiconductor device utilizing ion implantation, comprising the steps of: forming a mask pattern covering a monocrystal semiconductor region in which an emitter of a vertical bipolar element is formed; implanting ions of high concentration into said semiconductor region for providing an external base, using said mask pattern as a mask, wherein said ion implantation is carried out at a considerably inclined implantation angle of at least 20 degrees when measured from a vertical direction relative to the surface of the substrate to form in said semiconductor region an amorphous region a) having a substantially inverse trapezoidal vertical cross section and b) having an end which extends into an area just below an edge of said mask; and recrystallizing said amorphous region by heat treatment.

Claim 3

A method for fabrication of a semiconductor device utilizing ion implantation, comprising the steps of: forming a mask pattern covering a monocrystal semiconductor region; implanting ions of high concentration into said semiconductor region, using said mask pattern as a mask, wherein said ion implantation is carried out at a considerably inclined implantation angle of at least 20 degrees when measured from a vertical direction relative to the surface of the substrate to form in said semiconductor region am amorphous region a) having a substantially inverse trapezoidal vertical cross section and b) having an end which extends into an area just below an edge of said mask; forming an alloy of metal and semiconductor on the exposed surface portion of said semiconductor region which is not covered with said mask pattern; and recrystallizing said amorphous region by heat treatment, thereby to inhibit the metal atoms for forming said alloy from being anomalously diffused within said semiconductor region which contains the impurities of high concentration.

Claim 4

A method for fabrication of a semiconductor device utilizing ion implantation, comprising the steps of: forming a mask pattern covering a monocrystal semiconductor region; implanting ions of high concentration into said semiconductor region, using said mask pattern as a mask, wherein said ion implantation is carried out at a considerably inclined implantation angle of at least 20 degrees when measured from a vertical direction relative to the surface of the substrate to form in said semiconductor region am amorphous region a) having a substantially inverse trapezoidal vertical cross section and b) having an end which extends into an area just below an edge of said mask; forming an alloy of metal and semiconductor on the exposed surface portion of said semiconductor region which is not covered with said mask pattern; and recrystallizing said amorphous region by heat treatment, thereby to inhibit the metal atoms for forming said alloy from being anomalously diffused within said semiconductor region which contains the impurities of high concentration.

Claim 5

A method for fabrication of a semiconductor device utilizing ion implantation, comprising the steps of: leaving a first mask pattern at both sides of a gate electrode portion of a field effect transistor; leaving a second mask pattern covering a monocrystal semiconductor region for providing an emitter of a vertical bipolar transistor; implanting ions of high concentration simultaneously into said semiconductor regions for providing a source, drain and external base, using said first and second mask patterns as the masks respectively, wherein said ion implantation is carried out at a considerably inclined implantation angle of at least 20 degrees when measured from a vertical direction relative to the surface of the substrate, thereby to form amorphous regions in said semiconductor region so as to have substantially inverse trapezoidal vertical cross sections of said amorphous region, each end of which is extending sufficiently into an area just below said first and second mask edges; and recrystallizing said amorphous regions by heat treatment.

Claim 6

A method for fabrication of a semiconductor device utilizing ion implantation, comprising the steps of: leaving a first mask pattern at both sides of a gate electrode portion of a field effect transistor; leaving a second mask pattern covering a monocrystal semiconductor region for providing an emitter of a vertical bipolar transistor; implanting ions of high concentration simultaneously into said semiconductor regions for providing a source, drain and external base, using said first and second mask patterns as the masks respectively, wherein said ion implantation is carried out at a considerably inclined implantation angle of at least 20 degrees when measured from a vertical direction relative to the surface of the substrate, thereby to form amorphous regions in said semiconductor region so as to have substantially inverse trapezoidal vertical cross sections of said amorphous region, each end of which is extending sufficiently into an area just below said first and second mask edges; and recrystallizing said amorphous regions by heat treatment.

Claim 7

A method for fabrication of a semiconductor device utilizing ion implantation, comprising the steps of: leaving a first mask pattern at both sides of a gate electrode portion of a field effect transistor; leaving a second mask pattern covering a monocrystal semiconductor region for providing an emitter of a vertical bipolar transistor; implanting ions of high concentration simultaneously into said semiconductor regions for providing a source, drain and external base, using said first and second mask patterns as the masks respectively, wherein said ion implantation is carried out at a considerably inclined implantation angle of at least 20 degrees when measured from a vertical direction relative to the surface of the substrate, thereby to form amorphous regions in said semiconductor region so as to have substantially inverse trapezoidal vertical cross sections of said amorphous regions, each end of which is extending sufficiently into an area just below said first and second mask edges; forming an alloy of metal and semiconductor on the exposed surface portion of said semiconductor region which is not covered with said mask patterns; and recrystallizing said amorphous regions by heat treatment, thereby to inhibit the metal atoms for forming said alloy from being anomalously diffused within said semiconductor regions which contain the impurities of high concentration.

Claim 8

A method for fabrication of a semiconductor device utilizing ion implantation, comprising the steps of: leaving a first mask pattern at both sides of a gate electrode portion of a field effect transistor; leaving a second mask pattern covering a monocrystal semiconductor region for providing an emitter of a vertical bipolar transistor; implanting ions of high concentration simultaneously into said semiconductor regions for providing a source, drain and external base, using said first and second mask patterns as the masks respectively, wherein said ion implantation is carried out at a considerably inclined implantation angle of at least 20 degrees when measured from a vertical direction relative to the surface of the substrate, thereby to form amorphous regions in said semiconductor region so as to have substantially inverse trapezoidal vertical cross sections of said amorphous regions, each end of which is extending sufficiently into an area just below said first and second mask edges; forming an alloy of metal and semiconductor on the exposed surface portion of said semiconductor region which is not covered with said mask patterns; and recrystallizing said amorphous regions by heat treatment, thereby to inhibit the metal atoms for forming said alloy from being anomalously diffused within said semiconductor regions which contain the impurities of high concentration.

Claim 9

A method for fabrication of a semiconductor device utilizing ion implantation, comprising the steps of: forming a mask pattern on a monocrystal semiconductor region for determining the width of a base of a lateral bipolar element; implanting ions of high concentration into said semiconductor region for providing at least an emitter, using said mask pattern as a mask, wherein said ion implantation is carried out at a considerably inclined implantation angle of at least 20 degrees when measured from a vertical direction relative to the surface of the substrate to form in said semiconductor region an amorphous region a) having a substantially inverse trapezoidal vertical cross section and b) having an end which extends into an area just below an edge of said mask; and recrystallizing said amorphous region by heat treatment.

Claim 10

A method for fabrication of a semiconductor device utilizing ion implantation, comprising the steps of: forming a mask pattern on a monocrystal semiconductor region for determining the width of a base of a lateral bipolar element; implanting ions of high concentration into said semiconductor region for providing at least an emitter, using said mask pattern as a mask, wherein said ion implantation is carried out at a considerably inclined implantation angle of at least 20 degrees when measured from a vertical direction relative to the surface of the substrate to form in said semiconductor region an amorphous region a) having a substantially inverse trapezoidal vertical cross section and b) having an end which extends into an area just below an edge of said mask; and recrystallizing said amorphous region by heat treatment.

Claim 11

A method for fabrication of a semiconductor device utilizing ion implantation as set forth in any one of claims 1 to 5, wherein before or after said ion implantation of high concentration for forming said semiconductor regions, an additional ion implantation of high concentration for forming the amorphous region is carried out using a kind of ions which do not determine the electric conduction type of said semiconductor regions.

Claim 12

A method for fabrication of a semiconductor device utilizing ion implantation as set forth in any one of claims 1 to 5, wherein in the recrystallizing step by heat treatment, after ions are implanted into the semiconductor substrate which is kept at a temperature lower than room temperature to help formation of an amorphous region, the substrate is heated up from room temperature to as much high temperature as practicable so as to gradually allow solid-phase epitaxial growth of monocrystal region in the amorphous region, whereby a semiconductor region may be formed which is less liable to crystal defect.