Abstract A low pressure chemical vapor deposition apparatus is provided for removing particulate matter. The apparatus includes a bell jar, a quartz tube installed in the bell jar, a slotted quartz boat installed in the quartz tube and for holding wafers which are to be coated with film. The apparatus further includes a gas line for introducing a reactant gas into the chamber within the quartz tube, where the quartz boat is located, a gas inlet made of quartz, an MFC, a valve 10 a three-zone furnace for heating the quartz tube to a reaction temperature, a pump 4 for pumping out air and reactant gas from the chamber within the quartz tube, a door plate for placing the slotted quartz boat in the chamber a power source device for causing an electric current to charge contacts with a positive or negative bias which are provided on the door plate, and a main controller for operating the power source device.
In a low pressure chemical vapor deposition apparatus in which a mixture of reactant gases is introduced through a quartz tube into a chamber defined by an inner peripheral wall of a quartz tube supported upright on a door plate and domed-over by a bell jar which confines a space that is communicated to an evacuation pump, the quartz tube being effectively peripherally surrounded throughout its height by a three-zone furnace located externally of the bell jar, the door plate being arranged to removably support within the chamber a quartz boat provided with means for removably supporting thereon at least one wafer which is to be provided with a film by operation of the apparatus, the improvement wherein: the door plate, during operation of the apparatus is in communication with said chamber, and is provided with electrical contact means for applying a positive and negative bias thereto; and power supply means are provided, and operatively connected with said electrode means, for selectively charging each said electrode, whereby ionized gas mixture components remaining in said chamber after said film has been deposited on said wafer by operation of said apparatus, can be selectively attracted to said electrode means for recovery, for thereby reducing internal contamination of said apparatus and external contamination of said wafer provided with said film.
Claim 2
Dependent Claim
217 words
In a low pressure chemical vapor deposition apparatus in which a mixture of reactant gases is introduced through a quartz tube into a chamber defined by an inner peripheral wall of a quartz tube supported upright on a door plate and domed-over by a bell jar which confines a space that is communicated to an evacuation pump, the quartz tube being effectively peripherally surrounded throughout its height by a three-zone furnace located externally of the bell jar, the door plate being arranged to removably support within the chamber a quartz boat provided with means for removably supporting thereon at least one wafer which is to be provided with a film by operation of the apparatus, the improvement wherein: the door plate, during operation of the apparatus is in communication with said chamber, and is provided with electrical contact means for applying a positive and negative bias thereto; and power supply means are provided, and operatively connected with said electrode means, for selectively charging each said electrode, whereby ionized gas mixture components remaining in said chamber after said film has been deposited on said wafer by operation of said apparatus, can be selectively attracted to said electrode means for recovery, for thereby reducing internal contamination of said apparatus and external contamination of said wafer provided with said film.